| No. |
Part Name |
Description |
Manufacturer |
| 151 |
1N5242 |
500 mW silicon zener diode. Nominal zener voltage 12.0 V. |
Fairchild Semiconductor |
| 152 |
1N5242B |
12.0V 500 mW Zener Diode |
Continental Device India Limited |
| 153 |
1N5532A |
0.4 W, low voltage avalanche diode. Nominal zener voltage 12.0 V. Test current 1.0 mAdc. +-10% tolerance. |
Jinan Gude Electronic Device |
| 154 |
1N5532B |
0.4 W, low voltage avalanche diode. Nominal zener voltage 12.0 V. Test current 1.0 mAdc. +-5% tolerance. |
Jinan Gude Electronic Device |
| 155 |
1N5637 |
Diode TVS Single Uni-Dir 12.1V 1.5KW 2-Pin DO-13 |
New Jersey Semiconductor |
| 156 |
1N5637A |
Diode TVS Single Uni-Dir 12.8V 1.5KW 2-Pin DO-13 |
New Jersey Semiconductor |
| 157 |
1N5638 |
Diode TVS Single Uni-Dir 12.9V 1.5KW 2-Pin DO-13 |
New Jersey Semiconductor |
| 158 |
1N5738B |
12.0V Voltage Reference Diode |
Philips |
| 159 |
1N5936 |
1.5 W, silicon zener diode. Zener voltage 30V. Test current 12.5 mA. +-20% tolerance. |
Jinan Gude Electronic Device |
| 160 |
1N5936A |
1.5 W, silicon zener diode. Zener voltage 30V. Test current 12.5 mA. +-10% tolerance. |
Jinan Gude Electronic Device |
| 161 |
1N5936C |
1.5 W, silicon zener diode. Zener voltage 30V. Test current 12.5 mA. +-2% tolerance. |
Jinan Gude Electronic Device |
| 162 |
1N5936D |
1.5 W, silicon zener diode. Zener voltage 30V. Test current 12.5 mA. +-1% tolerance. |
Jinan Gude Electronic Device |
| 163 |
1N6111 |
Diode TVS Single Bi-Dir 12.2V 500W 2-Pin Case G-95 |
New Jersey Semiconductor |
| 164 |
1N6111A |
Diode TVS Single Bi-Dir 12.2V 500W 2-Pin |
New Jersey Semiconductor |
| 165 |
1N6147 |
Diode TVS Single Bi-Dir 12.2V 1.5KW 2-Pin |
New Jersey Semiconductor |
| 166 |
1N6147A |
Diode TVS Single Bi-Dir 12.2V 1.5KW 2-Pin |
New Jersey Semiconductor |
| 167 |
1N6275 |
Diode TVS Single Uni-Dir 12.1V 1.5KW 2-Pin Case 1 |
New Jersey Semiconductor |
| 168 |
1N6275A |
Diode TVS Single Uni-Dir 12.8V 1.5KW 2-Pin Case 1 |
New Jersey Semiconductor |
| 169 |
1N6275CA |
Diode TVS Single Bi-Dir 12.8V 1.5KW 2-Pin Case 1 |
New Jersey Semiconductor |
| 170 |
1N6275CA/1.5 |
Diode TVS Single Bi-Dir 12.8V 1.5KW 2-Pin Case 1 |
New Jersey Semiconductor |
| 171 |
1N6276 |
Diode TVS Single Uni-Dir 12.9V 1.5KW 2-Pin Case 1 |
New Jersey Semiconductor |
| 172 |
1N6276C |
Diode TVS Single Bi-Dir 12.9V 1.5KW 2-Pin Case 1 |
New Jersey Semiconductor |
| 173 |
1N6376 |
12.00V; 70A ;1500W peak pulse power; glass passivated junction transient voltage suppressor |
MDE Semiconductor |
| 174 |
1N6384 |
12.00V; 70A ;1500W peak pulse power; glass passivated junction transient voltage suppressor |
MDE Semiconductor |
| 175 |
1N759 |
12.0V Professional Grade 400 mW Axial Zener Diode |
Continental Device India Limited |
| 176 |
1N759 |
500 mW silicon linear diode. Max zener impedance 30.0 Ohm, max zener voltage 12.0 V (Iz 20mA). |
Fairchild Semiconductor |
| 177 |
1N759 |
400mW, 12.0 Volts Silicon Glass Zener Diode |
ITT Semiconductors |
| 178 |
1N759A |
12.0V Professional Grade 400 mW Axial Zener Diode |
Continental Device India Limited |
| 179 |
1N759A |
Voltage Regulator Diode 12.0V |
Philips |
| 180 |
1N759D |
500mW, silicon zener diode. Zener voltage 12.0 V. Test current 20 mA. +-1% tolerance. |
Jinan Gude Electronic Device |
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