No. |
Part Name |
Description |
Manufacturer |
151 |
GCX1204 |
SOT23 Abrupt Junction |
Microsemi |
152 |
HAS-1204 |
Ultra High-Speed 12-Bit A/D Converter |
Analog Devices |
153 |
HAS-1204BM |
Ultra High-Speed 12-Bit A/D Converter |
Analog Devices |
154 |
HAS-1204SM |
Ultra High-Speed 12-Bit A/D Converter |
Analog Devices |
155 |
HMS87C1204A |
8-BIT SINGLE-CHIP MICROCONTROLLERS |
Hynix Semiconductor |
156 |
HMS87C1204AD |
ROM/RAM size: 4 K/128 bytes, 2-5.5 V , 4-8 MHz,8-bit single-chip microcontroller |
Hynix Semiconductor |
157 |
HS12040 |
Schottky Rectifier |
Microsemi |
158 |
HS12045 |
Schottky Rectifier |
Microsemi |
159 |
IDT71P71204 |
1.8V 2M x 8 DDR II Pipelined SRAM |
IDT |
160 |
JAN1N1204A |
Standard Rectifier (trr more than 500ns) |
Microsemi |
161 |
JAN1N1204AR |
Standard Rectifier (trr more than 500ns) |
Microsemi |
162 |
JAN1N1204RA |
12A silicon power rectifier, 400V |
Microsemi |
163 |
JANTX1N1204A |
Standard Rectifier (trr more than 500ns) |
Microsemi |
164 |
JANTX1N1204AR |
Standard Rectifier (trr more than 500ns) |
Microsemi |
165 |
JANTX1N1204RA |
12A silicon power rectifier, 400V |
Microsemi |
166 |
JANTX1NV1204A |
12A silicon power rectifier, 400V |
Microsemi |
167 |
JANTX1NV1204RA |
12A silicon power rectifier, 400V |
Microsemi |
168 |
JANTXV1N1204A |
Standard Rectifier (trr more than 500ns) |
Microsemi |
169 |
JANTXV1N1204AR |
Standard Rectifier (trr more than 500ns) |
Microsemi |
170 |
KM416C1204BJ-45 |
5V, 1M x 16 bit CMOS DRAM with extended data out, 45ns |
Samsung Electronic |
171 |
KM416C1204BJ-5 |
5V, 1M x 16 bit CMOS DRAM with extended data out, 50ns |
Samsung Electronic |
172 |
KM416C1204BJ-6 |
5V, 1M x 16 bit CMOS DRAM with extended data out, 60ns |
Samsung Electronic |
173 |
KM416C1204BJ-7 |
5V, 1M x 16 bit CMOS DRAM with extended data out, 70ns |
Samsung Electronic |
174 |
KM416C1204BJ-L45 |
5V, 1M x 16 bit CMOS DRAM with extended data out, 45ns |
Samsung Electronic |
175 |
KM416C1204BJ-L5 |
5V, 1M x 16 bit CMOS DRAM with extended data out, 50ns |
Samsung Electronic |
176 |
KM416C1204BJ-L6 |
5V, 1M x 16 bit CMOS DRAM with extended data out, 60ns |
Samsung Electronic |
177 |
KM416C1204BJ-L7 |
5V, 1M x 16 bit CMOS DRAM with extended data out, 70ns |
Samsung Electronic |
178 |
KM416C1204BT-45 |
5V, 1M x 16 bit CMOS DRAM with extended data out, 45ns |
Samsung Electronic |
179 |
KM416C1204BT-5 |
5V, 1M x 16 bit CMOS DRAM with extended data out, 50ns |
Samsung Electronic |
180 |
KM416C1204BT-6 |
5V, 1M x 16 bit CMOS DRAM with extended data out, 60ns |
Samsung Electronic |
| | | |