| No. |
Part Name |
Description |
Manufacturer |
| 151 |
2N4123 |
Planar epitaxial passivated NPN silicon transistor. 30V, 200mA. |
General Electric Solid State |
| 152 |
2N4123 |
General Purpose NPN silicon switching and amplifier transistor |
ITT Semiconductors |
| 153 |
2N4123 |
Ic=200mA, Vce=1.0V transistor |
MCC |
| 154 |
2N4123 |
NPN Silicon General Purpose Transistor 625mW |
Micro Commercial Components |
| 155 |
2N4123 |
NPN SILICON PLANAR EPITAXIAL TRANSISTOR |
Micro Electronics |
| 156 |
2N4123 |
NPN silicon transistor |
Motorola |
| 157 |
2N4123 |
Silicon NPN Transistor |
Motorola |
| 158 |
2N4123 |
NPN Transistor - General Purpose AMPS and Switches |
National Semiconductor |
| 159 |
2N4123 |
NPN Silicon Transistor |
NEC |
| 160 |
2N4123 |
General Purpose Transistors(NPN Silicon) |
ON Semiconductor |
| 161 |
2N4123 |
NPN EPITAXIAL SILICON TRANSISTOR |
Samsung Electronic |
| 162 |
2N4123 |
Silicon NPN epitaxial transistor (PCT Process) |
TOSHIBA |
| 163 |
2N4123 |
General purpose transistor. Collector-emitter voltage: Vceo = 30V. Collector-base voltage: Vcbo = 40V. Collector dissipation: Pc(max) = 625mW. |
USHA India LTD |
| 164 |
2N4123-D |
General Purpose Transistors NPN Silicon |
ON Semiconductor |
| 165 |
2N4123BU |
NPN General Purpose Amplifier |
Fairchild Semiconductor |
| 166 |
2N4123RLRA |
General Purpose Transistor - NPN |
ON Semiconductor |
| 167 |
2N4123RLRM |
General Purpose Transistor - NPN |
ON Semiconductor |
| 168 |
2N4123TA |
NPN General Purpose Amplifier |
Fairchild Semiconductor |
| 169 |
2N4123TAR |
NPN General Purpose Amplifier |
Fairchild Semiconductor |
| 170 |
2N4123TF |
NPN General Purpose Amplifier |
Fairchild Semiconductor |
| 171 |
2N4123TFR |
NPN General Purpose Amplifier |
Fairchild Semiconductor |
| 172 |
2N6123 |
Medium Power Linear and Switching Applications |
Boca Semiconductor Corporation |
| 173 |
2N6123 |
Leaded Power Transistor General Purpose |
Central Semiconductor |
| 174 |
2N6123 |
40.000W Medium Power NPN Plastic Leaded Transistor. 80V Vceo, 4.000A Ic, 20 - 80 hFE. |
Continental Device India Limited |
| 175 |
2N6123 |
Epitaxial-base, silicon N-P-N VERSAWATT transistor. 80V. |
General Electric Solid State |
| 176 |
2N6123 |
COMPLEMENTARY SILICON PLASTIC POWER TRANSISTORS |
MOSPEC Semiconductor |
| 177 |
2N6123 |
4A complementary silicon plastic 40W power NPN transistor |
Motorola |
| 178 |
2N6123 |
NPN Power Transistor TO-220 |
National Semiconductor |
| 179 |
2N6123 |
NPN Power Transistor |
National Semiconductor |
| 180 |
2N6123 |
NPN silicon power transistor |
National Semiconductor |
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