No. |
Part Name |
Description |
Manufacturer |
151 |
CY7C1310BV18-200BZC |
18-Mbit QDR-II SRAM 2-Word Burst Architecture |
Cypress |
152 |
CY7C1310BV18-250BZC |
18-Mbit QDR-II SRAM 2-Word Burst Architecture |
Cypress |
153 |
CY7C1310V18 |
18-Mb QDR™-II SRAM Two-word Burst Architecture |
Cypress |
154 |
CY7C1310V18-133BZC |
18-Mb SRAM two-word burst architecture, 133MHz |
Cypress |
155 |
CY7C1310V18-167BZC |
18-Mb SRAM two-word burst architecture, 167MHz |
Cypress |
156 |
CY7C1310V18-200BZC |
18-Mb SRAM two-word burst architecture, 200MHz |
Cypress |
157 |
CZRA1310 |
Surface Mount Zener Diode |
Comchip Technology |
158 |
D1861 |
D1861A 10 Gbits/s 1310 nm DML Module |
Agere Systems |
159 |
D1861A |
D1861A 10 Gbits/s 1310 nm DML Module |
Agere Systems |
160 |
D1861A023 |
D1861A 10 Gbits/s 1310 nm DML Module |
Agere Systems |
161 |
D1861A040 |
D1861A 10 Gbits/s 1310 nm DML Module |
Agere Systems |
162 |
D1861A050 |
D1861A 10 Gbits/s 1310 nm DML Module |
Agere Systems |
163 |
D1861B |
D1861B 10 Gbits/s 1310 nm DML Module (-3 dBm) |
Agere Systems |
164 |
D1861B023 |
D1861B 10 Gbits/s 1310 nm DML Module (-3 dBm) |
Agere Systems |
165 |
D1861B040 |
D1861B 10 Gbits/s 1310 nm DML Module (-3 dBm) |
Agere Systems |
166 |
D1861B050 |
D1861B 10 Gbits/s 1310 nm DML Module (-3 dBm) |
Agere Systems |
167 |
D1861C |
D1861C 10 Gbits/s 1310 nm DML Module (6 dBm) |
Agere Systems |
168 |
D1861C023 |
D1861C 10 Gbits/s 1310 nm DML Module (6 dBm) |
Agere Systems |
169 |
D1861C040 |
D1861C 10 Gbits/s 1310 nm DML Module (6 dBm) |
Agere Systems |
170 |
D1861C050 |
D1861C 10 Gbits/s 1310 nm DML Module (6 dBm) |
Agere Systems |
171 |
D1861D |
D1861D 10 Gbits/s 1310 nm DML Module (10 dBm) |
Agere Systems |
172 |
D1861D023 |
D1861D 10 Gbits/s 1310 nm DML Module (10 dBm) |
Agere Systems |
173 |
D1861D040 |
D1861D 10 Gbits/s 1310 nm DML Module (10 dBm) |
Agere Systems |
174 |
D1861D050 |
D1861D 10 Gbits/s 1310 nm DML Module (10 dBm) |
Agere Systems |
175 |
DK1310FXK |
Fast Switching Thyristor |
Dynex Semiconductor |
176 |
DK1310FXM |
Fast Switching Thyristor |
Dynex Semiconductor |
177 |
EDI9LC644V1310BC |
SSRAM access:133MHz; SDRAM access:100MHz; 128K x 32 SSRAM/1M x 32 SDRAM |
White Electronic Designs |
178 |
FDC60-48D3305 |
Input range:36-75 VDC;output voltage:3.3/5 VDC; output current:6/6 A;input current:1310 mA; 60 W DC-DC converter |
Power Mate Technology |
179 |
GC1310 |
Tuning Varactors |
Microsemi |
180 |
HM628128FP-10 |
100ns; V(cc): -0.5 to +7.0V; 1W; 131072-word x 8-bit high speed CMOS static RAM |
Hitachi Semiconductor |
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