No. |
Part Name |
Description |
Manufacturer |
151 |
AGM1264F-RLYH-T |
0.3-7.0V; 15.0mA; number of dots: 128 x 64dots; 15.0mA; dot size:0.48 x 0.48mm; dot pitch:0.52 x 0.52mm; liquid crystal display |
AZ Displays |
152 |
AGM1264F-RLYS-T |
0.3-7.0V; 15.0mA; number of dots: 128 x 64dots; 15.0mA; dot size:0.48 x 0.48mm; dot pitch:0.52 x 0.52mm; liquid crystal display |
AZ Displays |
153 |
AGM1264F-RLYS-T |
0.3-7.0V; 15.0mA; number of dots: 128 x 64dots; 15.0mA; dot size:0.48 x 0.48mm; dot pitch:0.52 x 0.52mm; liquid crystal display |
AZ Displays |
154 |
AGM1264F-RLYW-T |
0.3-7.0V; 15.0mA; number of dots: 128 x 64dots; 15.0mA; dot size:0.48 x 0.48mm; dot pitch:0.52 x 0.52mm; liquid crystal display |
AZ Displays |
155 |
AGM1264F-RLYW-T |
0.3-7.0V; 15.0mA; number of dots: 128 x 64dots; 15.0mA; dot size:0.48 x 0.48mm; dot pitch:0.52 x 0.52mm; liquid crystal display |
AZ Displays |
156 |
APT4030CNR |
POWER MOS IV 400V 15.0A 0.300 Ohm |
Advanced Power Technology |
157 |
BD131 |
15.000W Medium Power NPN Plastic Leaded Transistor. 45V Vceo, 3.000A Ic, 20 hFE. |
Continental Device India Limited |
158 |
BD132 |
15.000W Medium Power PNP Plastic Leaded Transistor. 45V Vceo, 3.000A Ic, 20 hFE. |
Continental Device India Limited |
159 |
BD905 |
90.000W Medium Power NPN Plastic Leaded Transistor. 45V Vceo, 15.000A Ic, 40 - 250 hFE. |
Continental Device India Limited |
160 |
BD906 |
90.000W Medium Power PNP Plastic Leaded Transistor. 45V Vceo, 15.000A Ic, 40 - 250 hFE. |
Continental Device India Limited |
161 |
BD907 |
90.000W Medium Power NPN Plastic Leaded Transistor. 60V Vceo, 15.000A Ic, 40 - 250 hFE. |
Continental Device India Limited |
162 |
BD908 |
90.000W Medium Power PNP Plastic Leaded Transistor. 60V Vceo, 15.000A Ic, 5 hFE. |
Continental Device India Limited |
163 |
BD909 |
90.000W Medium Power NPN Plastic Leaded Transistor. 80V Vceo, 15.000A Ic, 40 - 250 hFE. |
Continental Device India Limited |
164 |
BD910 |
90.000W Medium Power PNP Plastic Leaded Transistor. 80V Vceo, 15.000A Ic, 40 - 250 hFE. |
Continental Device India Limited |
165 |
BD911 |
90.000W Medium Power NPN Plastic Leaded Transistor. 100V Vceo, 15.000A Ic, 5 hFE. |
Continental Device India Limited |
166 |
BD912 |
90.000W Medium Power PNP Plastic Leaded Transistor. 100V Vceo, 15.000A Ic, 5 hFE. |
Continental Device India Limited |
167 |
BUK7M15-40H |
N-channel 40 V, 15.0 mΩ standard level MOSFET in LFPAK33 |
Nexperia |
168 |
BUK9M15-40H |
N-channel 40 V, 15.0 mΩ logic level MOSFET in LFPAK33 |
Nexperia |
169 |
C460-XB290-E1000-A |
15.0mW; color:deep blue; 3.7-4.0V; Xbright InGaN LED |
CREE POWER |
170 |
CDBD1530A |
15.0 A SMD schottky barrier rectifier. Max repetitive peak reverse voltage 30 V. Common anode. |
Comchip Technology |
171 |
CDBD1530C |
15.0 A SMD schottky barrier rectifier. Max repetitive peak reverse voltage 30 V. Common cathod. |
Comchip Technology |
172 |
CDBD1530D |
15.0 A SMD schottky barrier rectifier. Max repetitive peak reverse voltage 30 V. Double. |
Comchip Technology |
173 |
CDBD1540A |
15.0 A SMD schottky barrier rectifier. Max repetitive peak reverse voltage 40 V. Common anode. |
Comchip Technology |
174 |
CDBD1540C |
15.0 A SMD schottky barrier rectifier. Max repetitive peak reverse voltage 40 V. Common cathod. |
Comchip Technology |
175 |
CDBD1540D |
15.0 A SMD schottky barrier rectifier. Max repetitive peak reverse voltage 40 V. Double. |
Comchip Technology |
176 |
CDBD1545A |
15.0 A SMD schottky barrier rectifier. Max repetitive peak reverse voltage 45 V. Common anode. |
Comchip Technology |
177 |
CDBD1545C |
15.0 A SMD schottky barrier rectifier. Max repetitive peak reverse voltage 45 V. Common cathod. |
Comchip Technology |
178 |
CDBD1545D |
15.0 A SMD schottky barrier rectifier. Max repetitive peak reverse voltage 45 V. Double. |
Comchip Technology |
179 |
CDBD1550A |
15.0 A SMD schottky barrier rectifier. Max repetitive peak reverse voltage 50 V. Common anode. |
Comchip Technology |
180 |
CDBD1550C |
15.0 A SMD schottky barrier rectifier. Max repetitive peak reverse voltage 50 V. Common cathod. |
Comchip Technology |
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