| No. |
Part Name |
Description |
Manufacturer |
| 151 |
2V095 |
Metal oxide varistor. Case diameter 16 mm. Nominal varistor voltage 150 V @ 1mA DC test current. |
NTE Electronics |
| 152 |
2V115 |
Metal oxide varistor. Case diameter 16 mm. Nominal varistor voltage 171 V @ 1mA DC test current. |
NTE Electronics |
| 153 |
2V130 |
Metal oxide varistor. Case diameter 16 mm. Nominal varistor voltage 216 V @ 1mA DC test current. |
NTE Electronics |
| 154 |
2V130 |
Metal oxide varistor. Case diameter 16 mm. Nominal varistor voltage 216 V @ 1mA DC test current. |
NTE Electronics |
| 155 |
2V150 |
Metal oxide varistor. Case diameter 16 mm. Nominal varistor voltage 240 V @ 1mA DC test current. |
NTE Electronics |
| 156 |
2V250 |
Metal oxide varistor. Case diameter 16 mm. Nominal varistor voltage 390 V @ 1mA DC test current. |
NTE Electronics |
| 157 |
2V275 |
Metal oxide varistor. Case diameter 16 mm. Nominal varistor voltage 430 V @ 1mA DC test current. |
NTE Electronics |
| 158 |
2V300 |
Metal oxide varistor. Case diameter 16 mm. Nominal varistor voltage 470 V @ 1mA DC test current. |
NTE Electronics |
| 159 |
2V420 |
Metal oxide varistor. Case diameter 16 mm. Nominal varistor voltage 680 V @ 1mA DC test current. |
NTE Electronics |
| 160 |
2V480 |
Metal oxide varistor. Case diameter 16 mm. Nominal varistor voltage 750 V @ 1mA DC test current. |
NTE Electronics |
| 161 |
31DQ09 |
Diode Schottky 90V 3.3A 2-Pin Case C-16 Box |
New Jersey Semiconductor |
| 162 |
3B01 |
3B Series 16 Channel Backplane |
Analog Devices |
| 163 |
41C16257 |
256K x 16 (4-MBIT) DYNAMIC RAM WITH FAST PAGE MODE |
Integrated Silicon Solution Inc |
| 164 |
42S16400A |
1 Meg Bits x 16 Bits x 4 Banks (64-MBIT) SYNCHRONOUS DYNAMIC RAM |
Integrated Silicon Solution Inc |
| 165 |
42S16800A |
16Meg x 8/ 8Meg x16 & 4Meg x 32 128-MBIT SYNCHRONOUS DRAM |
Integrated Silicon Solution Inc |
| 166 |
4AM16 (NCH/PCH) |
FET Arrays |
Hitachi Semiconductor |
| 167 |
4X16E43V |
4 MEG x 16 EDO DRAM |
etc |
| 168 |
4X16E83V |
4 MEG x 16 EDO DRAM |
etc |
| 169 |
4X16E83VTW-6 |
4 MEG x 16 EDO DRAM |
etc |
| 170 |
5082-7616 |
5082-7616 · 7.6 mm (0.3 inch) Overflow Character Displays |
Agilent (Hewlett-Packard) |
| 171 |
50S116T |
512K x 2 Banks x 16 BITS SDRAM |
Ceramate |
| 172 |
50S116T-5 |
High-speed synchronous dynamic random access memory (SDRAM), organized as 512K words x 2 banks x 16 bits. Speed (CL = 3) 200MHz. Self refresh current (max) 1mA |
Ceramate |
| 173 |
50S116T-6 |
High-speed synchronous dynamic random access memory (SDRAM), organized as 512K words x 2 banks x 16 bits. Speed (CL = 3) 166MHz. Self refresh current (max) 1mA |
Ceramate |
| 174 |
50S116T-7 |
High-speed synchronous dynamic random access memory (SDRAM), organized as 512K words x 2 banks x 16 bits. Speed (CL = 3) 143MHz. Self refresh current (max) 1mA |
Ceramate |
| 175 |
524V13 |
Metal oxide varistor. Case diameter 23 mm. Nominal varistor voltage 216 V @ 1mA DC test current. |
NTE Electronics |
| 176 |
54621D |
Mixed Signal Oscilloscope, 60 MHz, 2+16 Channels |
Agilent (Hewlett-Packard) |
| 177 |
54622D |
Mixed Signal Oscilloscope, 100 MHz, 2+16 Channels |
Agilent (Hewlett-Packard) |
| 178 |
54641D |
Mixed Signal Oscilloscope, 350 MHz, 2+16 Channels |
Agilent (Hewlett-Packard) |
| 179 |
54642D |
Mixed Signal Oscilloscope, 500 MHz, 2+16 Channels |
Agilent (Hewlett-Packard) |
| 180 |
54830D |
Mixed Signal Oscilloscope, 600 MHz, 2+16 Channels |
Agilent (Hewlett-Packard) |
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