| No. |
Part Name |
Description |
Manufacturer |
| 151 |
2SK1667 |
Transistors>Switching/MOSFETs |
Renesas |
| 152 |
2SK1668 |
Silicon N Channel MOS FET |
Hitachi Semiconductor |
| 153 |
2SK1668 |
Silicon N-Channel MOS FET |
Hitachi Semiconductor |
| 154 |
2SK1668 |
Transistors>Switching/MOSFETs |
Renesas |
| 155 |
2SK1669 |
Silicon N Channel MOS FET |
Hitachi Semiconductor |
| 156 |
2SK1669 |
Silicon N-Channel MOS FET |
Hitachi Semiconductor |
| 157 |
2SK1669 |
Transistors>Switching/MOSFETs |
Renesas |
| 158 |
2SK2166-01R |
N-channel MOS-FET |
Fuji Electric |
| 159 |
2STD1665 |
Low voltage fast-switching NPN power transistor |
ST Microelectronics |
| 160 |
2STD1665T4 |
Low voltage fast-switching NPN power transistor |
ST Microelectronics |
| 161 |
307C1668 |
Motor Start Pellet |
Vishay |
| 162 |
3N166 |
Monolithic Dual P-Channel Enhancement Mode MOSFET General Purpose Amplifier |
Calogic |
| 163 |
3N166 |
Monolithic dual P-channel enchancement mode MOSFET general purpose amplifier. |
Intersil |
| 164 |
3N166 |
Monolithic Dual, P-Channel Enhancement Mode MOSFET |
Linear Systems |
| 165 |
3N166 |
Trans MOSFET P-CH 30V 0.05A |
New Jersey Semiconductor |
| 166 |
3SK166 |
GaAs N-channel Dual Gate MES FET |
SONY |
| 167 |
3SK166A |
GaAs N-channel Dual Gate MES FET |
SONY |
| 168 |
3SK166A-0 |
GaAs N-channel Dual Gate MES FET |
SONY |
| 169 |
3SK166A-2 |
GaAs N-channel Dual Gate MES FET |
SONY |
| 170 |
3WN166 05 |
Electronic mouse with parallel output |
Tesla Elektronicke |
| 171 |
3WN166 15 |
Transmitter module with laser-diode |
Tesla Elektronicke |
| 172 |
3WN166 16 |
Receiver module with avalanche diode |
Tesla Elektronicke |
| 173 |
3WN166 17 |
Transmitter module with IRE diode |
Tesla Elektronicke |
| 174 |
3WN166 19 |
Transmitter module with IRE diode |
Tesla Elektronicke |
| 175 |
3WN166 20 |
Receiveer module MIT PIN diode |
Tesla Elektronicke |
| 176 |
3WN166 23 |
Transmitter module with PCS fibre |
Tesla Elektronicke |
| 177 |
3WN166 24 |
Receiver modul with Si diode |
Tesla Elektronicke |
| 178 |
50S116T-6 |
High-speed synchronous dynamic random access memory (SDRAM), organized as 512K words x 2 banks x 16 bits. Speed (CL = 3) 166MHz. Self refresh current (max) 1mA |
Ceramate |
| 179 |
54166 |
8-Bit shift register |
Fairchild Semiconductor |
| 180 |
54ABT16646 |
16-Bit Transceivers and Registers with TRI-STATE Outputs |
National Semiconductor |
| | | |
