No. |
Part Name |
Description |
Manufacturer |
151 |
MRF5S21130R3 |
2170 MHz, 28 W AVG., 2 x W–CDMA, 28 V Lateral N–Channel RF Power MOSFET |
Freescale (Motorola) |
152 |
MRF5S21130SR3 |
2170 MHz, 28 W AVG., 2 x W–CDMA, 28 V Lateral N–Channel RF Power MOSFET |
Freescale (Motorola) |
153 |
MRF5S21150 |
MRF5S21150, MRF5S21150R3, MRF5S21150S, MRF5S21150SR3 2170 MHz, 33 W Avg., 2 x W-CDMA, 28 V Lateral N-Channel RF Power MOSFETs |
Motorola |
154 |
MRF5S21150R3 |
2170 MHz, 33 W AVG., 2 x W–CDMA, 28 V Lateral N–Channel RF Power MOSFET |
Freescale (Motorola) |
155 |
MRF5S21150SR3 |
2170 MHz, 33 W AVG., 2 x W–CDMA, 28 V Lateral N–Channel RF Power MOSFET |
Freescale (Motorola) |
156 |
MRF6S21100HR3 |
2170 MHz, 23 W Avg., 28 V, 2 x W–CDMA Lateral N–Channel RF Power MOSFET |
Freescale (Motorola) |
157 |
MRF6S21100HSR3 |
2170 MHz, 23 W Avg., 28 V, 2 x W–CDMA Lateral N–Channel RF Power MOSFET |
Freescale (Motorola) |
158 |
NE38018-T1-68 |
GaAs HJ-FET L to S band low noise amplifier. Idss range 70-170 mA. |
NEC |
159 |
NX1029X |
60 / 50 V, 330 / 170 mA N/P-channel Trench MOSFET |
Nexperia |
160 |
NX1029X |
60 / 50 V, 330 / 170 mA N/P-channel Trench MOSFET |
NXP Semiconductors |
161 |
NX6020CAKS |
60 V / 50 V, 170 mA / 160 mA N/P-channel Trench MOSFET |
Nexperia |
162 |
P2040C-08SR |
50 MHz to 170 MHz, LCD panel EMI reduction IC |
Alliance Semiconductor |
163 |
P2040C-08ST |
50 MHz to 170 MHz, LCD panel EMI reduction IC |
Alliance Semiconductor |
164 |
P2040C-08TR |
50 MHz to 170 MHz, LCD panel EMI reduction IC |
Alliance Semiconductor |
165 |
P2040C-08TT |
50 MHz to 170 MHz, LCD panel EMI reduction IC |
Alliance Semiconductor |
166 |
PA1223 |
2110-2170 MHz, 5 W, GaAs ultra linear power amplifier |
MA-Com |
167 |
PA1223 |
2110-2170 MHz. 5 Watt 28v. GaAs Ultra Linear Power Amplifier |
Tyco Electronics |
168 |
PTAC210802FC-V1 |
High Power RF LDMOS FET 80W, 28V, 1805 - 2170 MHz |
Wolfspeed |
169 |
PTF180101 |
LDMOS RF Power Field Effect Transistor 10 W/ 1805-1880 MHz/ 1930-1990 MHz 10 W/ 2110-2170 MHz |
Infineon |
170 |
PTF180101S |
LDMOS RF Power Field Effect Transistor 10 W/ 1805-1880 MHz/ 1930-1990 MHz 10 W/ 2110-2170 MHz |
Infineon |
171 |
PTF210301 |
LDMOS RF Power Field Effect Transistor 30 W/ 2110-2170 MHz |
Infineon |
172 |
PTF210301A |
LDMOS RF Power Field Effect Transistor 30 W/ 2110-2170 MHz |
Infineon |
173 |
PTF210301E |
LDMOS RF Power Field Effect Transistor 30 W/ 2110-2170 MHz |
Infineon |
174 |
PTF210451 |
LDMOS RF Power Field Effect Transistor 45 W/ 2110-2170 MHz |
Infineon |
175 |
PTF210451E |
LDMOS RF Power Field Effect Transistor 45 W/ 2110-2170 MHz |
Infineon |
176 |
PTF210901 |
LDMOS RF Power Field Effect Transistor 90 W/ 2110-2170 MHz |
Infineon |
177 |
PTF210901E |
LDMOS RF Power Field Effect Transistor 90 W/ 2110-2170 MHz |
Infineon |
178 |
PTF211301 |
LDMOS RF Power Field Effect Transistor 130 W/ 2110-2170 MHz |
Infineon |
179 |
PTF211301A |
LDMOS RF Power Field Effect Transistor 130 W/ 2110-2170 MHz |
Infineon |
180 |
PTF211802 |
LDMOS RF Power Field Effect Transistor 180 W/ 2110-2170 MHz |
Infineon |
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