| No. |
Part Name |
Description |
Manufacturer |
| 151 |
AS432A1DBV7 |
1.24V precision adjustable shunt reference/amplifier |
ASTEC Semiconductor |
| 152 |
AS432A1DBVA |
1.24V precision adjustable shunt reference/amplifier |
ASTEC Semiconductor |
| 153 |
AS432A1DBVB |
1.24V precision adjustable shunt reference/amplifier |
ASTEC Semiconductor |
| 154 |
AS432A1DBVT |
1.24V precision adjustable shunt reference/amplifier |
ASTEC Semiconductor |
| 155 |
AS432B1DB |
1.24V precision adjustable shunt reference/amplifier |
ASTEC Semiconductor |
| 156 |
AS432B1DBV13 |
1.24V precision adjustable shunt reference/amplifier |
ASTEC Semiconductor |
| 157 |
AS432B1DBV7 |
1.24V precision adjustable shunt reference/amplifier |
ASTEC Semiconductor |
| 158 |
AS432B1DBVA |
1.24V precision adjustable shunt reference/amplifier |
ASTEC Semiconductor |
| 159 |
AS432B1DBVB |
1.24V precision adjustable shunt reference/amplifier |
ASTEC Semiconductor |
| 160 |
AS432B1DBVT |
1.24V precision adjustable shunt reference/amplifier |
ASTEC Semiconductor |
| 161 |
AS432C1DB |
1.24V precision adjustable shunt reference/amplifier |
ASTEC Semiconductor |
| 162 |
AS432C1DBV13 |
1.24V precision adjustable shunt reference/amplifier |
ASTEC Semiconductor |
| 163 |
AS432C1DBV7 |
1.24V precision adjustable shunt reference/amplifier |
ASTEC Semiconductor |
| 164 |
AS432C1DBVA |
1.24V precision adjustable shunt reference/amplifier |
ASTEC Semiconductor |
| 165 |
AS432C1DBVB |
1.24V precision adjustable shunt reference/amplifier |
ASTEC Semiconductor |
| 166 |
AS432C1DBVT |
1.24V precision adjustable shunt reference/amplifier |
ASTEC Semiconductor |
| 167 |
ATN3590-01 |
Fixed Attenuators 1dB Attenuation |
Skyworks Solutions |
| 168 |
B431DBM |
2.5V adjustable shunt regulator |
BayLinear |
| 169 |
B431DBR |
2.5V adjustable shunt regulator |
BayLinear |
| 170 |
B431DBZ |
2.5V adjustable shunt regulator |
BayLinear |
| 171 |
BF543 |
RF-MOSFET - VDS=15V, gfs=12mS, Gp=22dB, F=1dB |
Infineon |
| 172 |
BF998 |
RF-MOSFET - VDS=8V, gfs=24mS, Gps=28dB, F=1dB |
Infineon |
| 173 |
BF998R |
RF-MOSFET - VDS=8V, gfs=24mS, Gps=28dB, F=1dB |
Infineon |
| 174 |
BF999 |
RF-MOSFET - VDS=15V, gfs=16mS, Gp=25dB, F=1dB |
Infineon |
| 175 |
BGA310 |
Silicon Bipolar MMIC-Amplifier (Cascadable 50 W-gain block 9 dB typical gain at 1.0 GHz 9 dBm typical P-1dB at 1.0 GHz 3 dB-bandwidth: DC to 2.4 GHz) |
Siemens |
| 176 |
BGA312 |
Silicon Bipolar MMIC-Amplifier (Cascadable 50 W-gain block 11 dB typical gain at 1.0 GHz 9 dBm typical P-1dB at 1.0 GHz) |
Siemens |
| 177 |
BGA318 |
Silicon Bipolar MMIC-Amplifier (Cascadable 50 W-gain block 16 dB typical gain at 1.0 GHz 12 dBm typical P-1dB at 1.0 GHz) |
Siemens |
| 178 |
BGA622 |
Silicon MMICs - SiGe Ultra Low Noise Amplifier G = 15dB, NF=1.1dB, 50Ohm, SOT343 |
Infineon |
| 179 |
BQ20851DBT-V1P2 |
V1P2 SBS-Compliant Gas Gauge IC For Use With The bq29311 |
Texas Instruments |
| 180 |
BQ20851DBTR-V1P2 |
V1P2 SBS-Compliant Gas Gauge IC For Use With The bq29311 |
Texas Instruments |
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