No. |
Part Name |
Description |
Manufacturer |
151 |
1N5523CUR-1E3 |
Low Voltage Avalanche Zener |
Microsemi |
152 |
1N5523D |
0.4W LOW VOLTAGE AVALANCHE DIODES |
Jinan Gude Electronic Device |
153 |
1N5523D |
Diode Zener Single 5.1V 1% 400mW 2-Pin DO-35 |
New Jersey Semiconductor |
154 |
1N5523D-1 |
Low Voltage Avalanche Zener |
Microsemi |
155 |
1N5523D-1E3 |
Low Voltage Avalanche Zener |
Microsemi |
156 |
1N5523DUR-1 |
Low Voltage Avalanche Zener |
Microsemi |
157 |
1N5523DUR-1E3 |
Low Voltage Avalanche Zener |
Microsemi |
158 |
1N5524 |
0.4W LOW VOLTAGE AVALANCHE DIODES |
Jinan Gude Electronic Device |
159 |
1N5524 |
LOW VOLTAGE AVALANCHE ZENER DIODES HIGH PERFORMANCE: LOW NOISE, LOW LEAKAGE |
Knox Semiconductor Inc |
160 |
1N5524 |
Low Voltage Avalanche Zener |
Microsemi |
161 |
1N5524 |
Low voltage avalanche silicon oxide passivated zener regulator diode 400mW 5.6V ±20% tolerance |
Motorola |
162 |
1N5524 |
Diode Zener Single 5.6V 20% 400mW 2-Pin DO-35 |
New Jersey Semiconductor |
163 |
1N5524A |
0.4 W, low voltage avalanche diode. Nominal zener voltage 5.6 V. Test current 3.0 mAdc. +-10% tolerance. |
Jinan Gude Electronic Device |
164 |
1N5524A |
Low Voltage Avalanche Zener |
Microsemi |
165 |
1N5524A |
Low voltage avalanche silicon oxide passivated zener regulator diode 400mW 5.6V ±10% tolerance |
Motorola |
166 |
1N5524A |
Diode Zener Single 5.6V 10% 400mW 2-Pin DO-35 |
New Jersey Semiconductor |
167 |
1N5524A-1 |
Low Voltage Avalanche Zener |
Microsemi |
168 |
1N5524A-1E3 |
Low Voltage Avalanche Zener |
Microsemi |
169 |
1N5524AUR-1 |
Low Voltage Avalanche Zener |
Microsemi |
170 |
1N5524AUR-1E3 |
Low Voltage Avalanche Zener |
Microsemi |
171 |
1N5524B |
Leaded Zener Diode General Purpose |
Central Semiconductor |
172 |
1N5524B |
LOW REVERSE LEAKAGE CHARACTERISTICS |
Compensated Devices Incorporated |
173 |
1N5524B |
0.4 W, low voltage avalanche diode. Nominal zener voltage 5.6 V. Test current 3.0 mAdc. +-5% tolerance. |
Jinan Gude Electronic Device |
174 |
1N5524B |
Low Voltage Avalanche Zener |
Microsemi |
175 |
1N5524B |
Low Voltage Avalanche Zener |
Microsemi |
176 |
1N5524B |
Low voltage avalanche silicon oxide passivated zener regulator diode 400mW 5.6V ±5% tolerance |
Motorola |
177 |
1N5524B |
Diode Zener Single 5.6V 5% 400mW 2-Pin DO-35 |
New Jersey Semiconductor |
178 |
1N5524B (DO35) |
Low Voltage Avalanche Zener |
Microsemi |
179 |
1N5524B-1 |
LOW REVERSE LEAKAGE CHARACTERISTICS |
Compensated Devices Incorporated |
180 |
1N5524B-1 |
Low Voltage Avalanche Zener |
Microsemi |
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