| No. |
Part Name |
Description |
Manufacturer |
| 151 |
2SK3288 |
Silicon N Channel MOS FET High Speed Switching |
Hitachi Semiconductor |
| 152 |
2SK3288 |
Transistors>Switching/MOSFETs |
Renesas |
| 153 |
30KP288A |
TRANSIENT VOLTAGE SUPPRESSORS |
Micro Commercial Components |
| 154 |
30KP288CA |
TRANSIENT VOLTAGE SUPPRESSORS |
Micro Commercial Components |
| 155 |
30KPA288 |
Diode TVS Single Uni-Dir 288V 30KW 2-Pin Case P600 T/R |
New Jersey Semiconductor |
| 156 |
30KPA288 |
Diode TVS Single Uni-Dir 288V 30KW 2-Pin Case P600 T/R |
New Jersey Semiconductor |
| 157 |
30KPA288A |
Diode TVS Single Uni-Dir 288V 30KW 2-Pin Case P600 T/R |
New Jersey Semiconductor |
| 158 |
30KPA288A |
Diode TVS Single Uni-Dir 288V 30KW 2-Pin Case P600 T/R |
New Jersey Semiconductor |
| 159 |
30KPA288Ae3/TR13 |
Standard Unidirectional and Bidirectional TVS |
Microsemi |
| 160 |
30KPA288C |
Diode TVS Single Bi-Dir 288V 30KW 2-Pin Case P600 T/R |
New Jersey Semiconductor |
| 161 |
30KPA288C |
Diode TVS Single Bi-Dir 288V 30KW 2-Pin Case P600 T/R |
New Jersey Semiconductor |
| 162 |
30KPA288CA |
Diode TVS Single Bi-Dir 288V 30KW 2-Pin Case P600 T/R |
New Jersey Semiconductor |
| 163 |
30KPA288CA |
Diode TVS Single Bi-Dir 288V 30KW 2-Pin Case P600 T/R |
New Jersey Semiconductor |
| 164 |
30KPA288CAe3/TR13 |
Standard Unidirectional and Bidirectional TVS |
Microsemi |
| 165 |
30KPA288Ce3/TR13 |
Standard Unidirectional and Bidirectional TVS |
Microsemi |
| 166 |
30KPA288e3/TR13 |
Standard Unidirectional and Bidirectional TVS |
Microsemi |
| 167 |
30KW288 |
288.00V; 5mA ;15000W peak pulse power; glass passivated junction transient voltage suppressor. For bipolar applications |
MDE Semiconductor |
| 168 |
30KW288 |
288.00V; 5mA ;15000W peak pulse power; glass passivated junction transient voltage suppressor. For bipolar applications |
MDE Semiconductor |
| 169 |
30KW288A |
288.00V; 5mA ;15000W peak pulse power; glass passivated junction transient voltage suppressor. For bipolar applications |
MDE Semiconductor |
| 170 |
30KW288A |
288.00V; 5mA ;15000W peak pulse power; glass passivated junction transient voltage suppressor. For bipolar applications |
MDE Semiconductor |
| 171 |
37LV36 |
Note:This product has become 'Obsolete' and is no longer offered as a viable device.37LV36 is a Serial OTP EPROM device organized internally in a x32 configuration with 36,288 bits and 1134x32 programming word. The 37LV36 is suitable for m |
Microchip |
| 172 |
42050-288 |
28V DC; 10A; positive voltage regulator. For use in general purpose applications |
Micropac Industries |
| 173 |
A23L9308 |
524/288 X 8 BIT CMOS MASK ROM |
AMIC Technology |
| 174 |
A23L9308-15 |
524/288 X 8 BIT CMOS MASK ROM |
AMIC Technology |
| 175 |
A23L9308-20 |
524/288 X 8 BIT CMOS MASK ROM |
AMIC Technology |
| 176 |
A23L9308H-15 |
524/288 X 8 BIT CMOS MASK ROM |
AMIC Technology |
| 177 |
A23L9308H-20 |
524/288 X 8 BIT CMOS MASK ROM |
AMIC Technology |
| 178 |
A23L9308L-15 |
524/288 X 8 BIT CMOS MASK ROM |
AMIC Technology |
| 179 |
A23L9308L-20 |
524/288 X 8 BIT CMOS MASK ROM |
AMIC Technology |
| 180 |
A23L9308M-15 |
524/288 X 8 BIT CMOS MASK ROM |
AMIC Technology |
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