| No. |
Part Name |
Description |
Manufacturer |
| 151 |
2SK2885 |
Silicon N Channel MOS FET High Speed Power Switching |
Hitachi Semiconductor |
| 152 |
2SK2885 |
N CHANNEL MOS TYPE (HIGH SPEED/ HIGH CURRENT SWITCHING/ CHOPPER REGULATOR/ DC-DC CONVERTERAND AND MOTOR DRIVE APPLICATIONS) |
TOSHIBA |
| 153 |
2SK2885(L) |
Power switching MOSFET |
Hitachi Semiconductor |
| 154 |
2SK2885(S) |
Power switching MOSFET |
Hitachi Semiconductor |
| 155 |
2SK2885L |
Silicon N Channel MOS FET High Speed Power Switching |
Hitachi Semiconductor |
| 156 |
2SK2885S |
Silicon N Channel MOS FET High Speed Power Switching |
Hitachi Semiconductor |
| 157 |
2SK2886 |
Field Effect Transistor Silicon N Channel MOS Type (pi-MOSV) Chopper Regulator, DC .DC Converter and Motor Drive Applications |
TOSHIBA |
| 158 |
2SK2887 |
Transistors > MOS FET > Power MOS FET |
ROHM |
| 159 |
2SK2889 |
Field Effect Transistor Silicon N Channel MOS Type (pi-MOSV) Chopper Regulator, DC .DC Converter and Motor Drive Applications |
TOSHIBA |
| 160 |
2SK3288 |
Silicon N Channel MOS FET |
Hitachi Semiconductor |
| 161 |
2SK3288 |
Silicon N Channel MOS FET High Speed Switching |
Hitachi Semiconductor |
| 162 |
2SK3288 |
Transistors>Switching/MOSFETs |
Renesas |
| 163 |
30KP288A |
TRANSIENT VOLTAGE SUPPRESSORS |
Micro Commercial Components |
| 164 |
30KP288CA |
TRANSIENT VOLTAGE SUPPRESSORS |
Micro Commercial Components |
| 165 |
30KPA288 |
Diode TVS Single Uni-Dir 288V 30KW 2-Pin Case P600 T/R |
New Jersey Semiconductor |
| 166 |
30KPA288 |
Diode TVS Single Uni-Dir 288V 30KW 2-Pin Case P600 T/R |
New Jersey Semiconductor |
| 167 |
30KPA288A |
Diode TVS Single Uni-Dir 288V 30KW 2-Pin Case P600 T/R |
New Jersey Semiconductor |
| 168 |
30KPA288A |
Diode TVS Single Uni-Dir 288V 30KW 2-Pin Case P600 T/R |
New Jersey Semiconductor |
| 169 |
30KPA288Ae3/TR13 |
Standard Unidirectional and Bidirectional TVS |
Microsemi |
| 170 |
30KPA288C |
Diode TVS Single Bi-Dir 288V 30KW 2-Pin Case P600 T/R |
New Jersey Semiconductor |
| 171 |
30KPA288C |
Diode TVS Single Bi-Dir 288V 30KW 2-Pin Case P600 T/R |
New Jersey Semiconductor |
| 172 |
30KPA288CA |
Diode TVS Single Bi-Dir 288V 30KW 2-Pin Case P600 T/R |
New Jersey Semiconductor |
| 173 |
30KPA288CA |
Diode TVS Single Bi-Dir 288V 30KW 2-Pin Case P600 T/R |
New Jersey Semiconductor |
| 174 |
30KPA288CAe3/TR13 |
Standard Unidirectional and Bidirectional TVS |
Microsemi |
| 175 |
30KPA288Ce3/TR13 |
Standard Unidirectional and Bidirectional TVS |
Microsemi |
| 176 |
30KPA288e3/TR13 |
Standard Unidirectional and Bidirectional TVS |
Microsemi |
| 177 |
30KW288 |
288.00V; 5mA ;15000W peak pulse power; glass passivated junction transient voltage suppressor. For bipolar applications |
MDE Semiconductor |
| 178 |
30KW288 |
288.00V; 5mA ;15000W peak pulse power; glass passivated junction transient voltage suppressor. For bipolar applications |
MDE Semiconductor |
| 179 |
30KW288A |
288.00V; 5mA ;15000W peak pulse power; glass passivated junction transient voltage suppressor. For bipolar applications |
MDE Semiconductor |
| 180 |
30KW288A |
288.00V; 5mA ;15000W peak pulse power; glass passivated junction transient voltage suppressor. For bipolar applications |
MDE Semiconductor |
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