| No. |
Part Name |
Description |
Manufacturer |
| 151 |
GP102AG-DC48-L |
Relay. Coil voltage 48 VDC. Contact arrangement 2A. Contact material gold flashed. Option neon lamp. |
Global Components & Controls |
| 152 |
GP102AG-DC48-LB |
Relay. Coil voltage 48 VDC. Contact arrangement 2A. Contact material gold flashed. Option lamp & button. |
Global Components & Controls |
| 153 |
GP102AG-DC6-B |
Relay. Coil voltage 6 VDC. Contact arrangement 2A. Contact material gold flashed. Option test button. |
Global Components & Controls |
| 154 |
GP102AG-DC6-L |
Relay. Coil voltage 6 VDC. Contact arrangement 2A. Contact material gold flashed. Option neon lamp. |
Global Components & Controls |
| 155 |
GP102AG-DC6-LB |
Relay. Coil voltage 6 VDC. Contact arrangement 2A. Contact material gold flashed. Option lamp & button. |
Global Components & Controls |
| 156 |
IFC125-14 |
AC/DC open frame. 125 Watts. Output 1: Vnom 24.0V, Imax 5.2A. Output 2: Vnom 12.0V, Imax 0.5A. |
International Power Sources |
| 157 |
IRF120 |
N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 100V. Continuous drain current 32A. |
General Electric Solid State |
| 158 |
IRF121 |
N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 60V. Continuous drain current 32A. |
General Electric Solid State |
| 159 |
IRF452 |
N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 500V. Continuous drain current(at Tc 25deg) 12A. |
General Electric Solid State |
| 160 |
IRF453 |
N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 450V. Continuous drain current(at Tc 25deg) 12A. |
General Electric Solid State |
| 161 |
IRF532 |
N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 100V. Continuous drain current(at Tc 25deg) 12A. |
General Electric Solid State |
| 162 |
IRF533 |
N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 60V. Continuous drain current(at Tc 25deg) 12A. |
General Electric Solid State |
| 163 |
KSH07048S1V8AH |
Half brick DC/DC converter. Open frame/positive logic. Output power 126W. Output voltage 1.8V. Output current maximum 70A. Input current 3.02A. |
International Power Sources |
| 164 |
KSH07048S1V8AL |
Half brick DC/DC converter. Open frame/negative logic. Output power 126W. Output voltage 1.8V. Output current maximum 70A. Input current 3.02A. |
International Power Sources |
| 165 |
KSH07048S1V8BH |
Half brick DC/DC converter. Baseplate/positive logic. Output power 126W. Output voltage 1.8V. Output current maximum 70A. Input current 3.02A. |
International Power Sources |
| 166 |
KSH07048S1V8BL |
Half brick DC/DC converter. Baseplate/negative logic. Output power 126W. Output voltage 1.8V. Output current maximum 70A. Input current 3.02A. |
International Power Sources |
| 167 |
NTE5871 |
Silicon power rectifier diode. Anode to case. Max repetitive peak reverse voltage 50V. Average forward current 12A. |
NTE Electronics |
| 168 |
NTE5872 |
Silicon power rectifier diode. Cathode to case. Max repetitive peak reverse voltage 100V. Average forward current 12A. |
NTE Electronics |
| 169 |
NTE5873 |
Silicon power rectifier diode. Anode to case. Max repetitive peak reverse voltage 100V. Average forward current 12A. |
NTE Electronics |
| 170 |
NTE5874 |
Silicon power rectifier diode. Cathode to case. Max repetitive peak reverse voltage 200V. Average forward current 12A. |
NTE Electronics |
| 171 |
NTE5875 |
Silicon power rectifier diode. Anode to case. Max repetitive peak reverse voltage 200V. Average forward current 12A. |
NTE Electronics |
| 172 |
NTE5876 |
Silicon power rectifier diode. Cathode to case. Max repetitive peak reverse voltage 300V. Average forward current 12A. |
NTE Electronics |
| 173 |
NTE5877 |
Silicon power rectifier diode. Anode to case. Max repetitive peak reverse voltage 300V. Average forward current 12A. |
NTE Electronics |
| 174 |
NTE5878 |
Silicon power rectifier diode. Cathode to case. Max repetitive peak reverse voltage 400V. Average forward current 12A. |
NTE Electronics |
| 175 |
NTE5879 |
Silicon power rectifier diode. Anode to case. Max repetitive peak reverse voltage 400V. Average forward current 12A. |
NTE Electronics |
| 176 |
NTE5880 |
Silicon power rectifier diode. Cathode to case. Max repetitive peak reverse voltage 500V. Average forward current 12A. |
NTE Electronics |
| 177 |
NTE5881 |
Silicon power rectifier diode. Anode to case. Max repetitive peak reverse voltage 500V. Average forward current 12A. |
NTE Electronics |
| 178 |
NTE5882 |
Silicon power rectifier diode. Cathode to case. Max repetitive peak reverse voltage 600V. Average forward current 12A. |
NTE Electronics |
| 179 |
NTE5883 |
Silicon power rectifier diode. Anode to case. Max repetitive peak reverse voltage 600V. Average forward current 12A. |
NTE Electronics |
| 180 |
NTE5886 |
Silicon power rectifier diode. Cathode to case. Max repetitive peak reverse voltage 800V. Average forward current 12A. |
NTE Electronics |
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