| No. |
Part Name |
Description |
Manufacturer |
| 151 |
HGT1S2N120CN |
13A, 1200V, NPT Series N-Channel IGBT |
Fairchild Semiconductor |
| 152 |
HGT1S2N120CNDS |
13A, 1200V, NPT Series N-Channel IGBTs with Anti-Parallel Hyperfast Diodes |
Fairchild Semiconductor |
| 153 |
HGT1S2N120CNDS |
13A/ 1200V/ NPT Series N-Channel IGBTs with Anti-Parallel Hyperfast Diodes |
Intersil |
| 154 |
HGT1S2N120CNS |
45A, 600V, UFS Series N-Channel IGBT |
Fairchild Semiconductor |
| 155 |
HGT1S2N120CNS |
13A/ 1200V/ NPT Series N-Channel IGBT |
Intersil |
| 156 |
HGTD2N120BNS |
12A, 1200V, NPT Series N-Channel IGBT |
Fairchild Semiconductor |
| 157 |
HGTD2N120BNS |
12A/ 1200V/ NPT Series N-Channel IGBT |
Intersil |
| 158 |
HGTD2N120CNS |
13A, 1200V, NPT Series N-Channel IGBT |
Fairchild Semiconductor |
| 159 |
HGTD2N120CNS |
13A/ 1200V/ NPT Series N-Channel IGBT |
Intersil |
| 160 |
HGTP2N120BN |
12A, 1200V, NPT Series N-Channel IGBT |
Fairchild Semiconductor |
| 161 |
HGTP2N120BN |
12A/ 1200V/ NPT Series N-Channel IGBT |
Intersil |
| 162 |
HGTP2N120BND |
12A, 1200V, NPT Series N-Channel IGBT with Anti-Parallel Hyperfast Diode |
Fairchild Semiconductor |
| 163 |
HGTP2N120BND |
12A/ 1200V/ NPT Series N-Channel IGBT with Anti-Parallel Hyperfast Diode |
Intersil |
| 164 |
HGTP2N120CN |
13A, 1200V, NPT Series N-Channel IGBT |
Fairchild Semiconductor |
| 165 |
HGTP2N120CN |
13A/ 1200V/ NPT Series N-Channel IGBT |
Intersil |
| 166 |
HGTP2N120CND |
13A, 1200V, NPT Series N-Channel IGBTs with Anti-Parallel Hyperfast Diodes |
Fairchild Semiconductor |
| 167 |
HGTP2N120CND |
13A/ 1200V/ NPT Series N-Channel IGBTs with Anti-Parallel Hyperfast Diodes |
Intersil |
| 168 |
HGTP2N120CNS |
13A, 1200V, NPT Series N-Channel IGBT |
Fairchild Semiconductor |
| 169 |
IXFN32N120 |
Discrete MOSFETs: HiPerFET Power MOSFETS |
IXYS |
| 170 |
IXTH12N120 |
Discrete MOSFETs: Standard N-channel Types |
IXYS |
| 171 |
JAN-2N128 |
SBT PNP switch - germanium transistor, military version |
Sprague |
| 172 |
KGT12N120NDH |
IGBT |
Korea Electronics (KEC) |
| 173 |
MGV12N120D |
Insulated Gate Bipolar Transistor with Anti-Parallel Diode |
Motorola |
| 174 |
MGW12N120 |
Insulated Gate Bipolar Transistor |
Motorola |
| 175 |
MGW12N120 |
Insulated Gate Bipolar Transistor N-Channel |
ON Semiconductor |
| 176 |
MGW12N120-D |
Insulated Gate Bipolar Transistor N-Channel Enhancement-Mode Silicon Gate |
ON Semiconductor |
| 177 |
MGW12N120D |
Insulated Gate Bipolar Transistor with Anti-Parallel Diode |
Motorola |
| 178 |
MGW12N120D |
Insulated Gate Bipolar Transistor with Anti-Parallel Diode N-Channel |
ON Semiconductor |
| 179 |
MGW12N120D-D |
Insulated Gate Bipolar Transistor with Anti-Parallel Diode N-Channel Enhancement-Mode Silicon Gate |
ON Semiconductor |
| 180 |
MK45H02N12 |
VERY FAST CMOS 512/1K/2K x9BiPORT FIFO |
ST Microelectronics |
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