| No. |
Part Name |
Description |
Manufacturer |
| 151 |
PTI3134-9L |
Radar Pulsed Power Transistor, SW, 300ms Pulse, 10% Duty 3.1 - 3.4 GHz |
Tyco Electronics |
| 152 |
QPA1001 |
3.1 - 3.5 GHz 60 Watt GaN Power Amplifier |
Qorvo |
| 153 |
QPB2318 |
15.5 dB, 5 MHz - 210 MHz, DOCSIS 3.1 Reverse Amplifier |
Qorvo |
| 154 |
QPB2328 |
5 - 210 MHz, 17.8 dB, DOCSIS 3.1 Reverse Amplifier |
Qorvo |
| 155 |
QPB3311 |
5 - 210 MHz, 15.2 dB, Single Ended, DOCSIS 3.1 Reverse Amplifier |
Qorvo |
| 156 |
QPB3321 |
5 - 210 MHz, 17.5 dB, Single Ended, DOCSIS 3.1 Reverse Amplifier |
Qorvo |
| 157 |
QPD1017 |
3.1 - 3.5 GHz, 450 Watt, 50 V GaN RF IMFET |
Qorvo |
| 158 |
QPD1018 |
500 Watt, 50 Volt, 2.7 - 3.1 GHz, GaN RF IMFET |
Qorvo |
| 159 |
RF6569 |
868 - 928 MHz, 3.1 - 4 V Transmit / Receive Module |
Qorvo |
| 160 |
RFFM6906 |
865 - 928 MHz, 3.1 - 4 V Transmit / Receive Module |
Qorvo |
| 161 |
RV3135B5X |
Pulsed Power NPN Transistor for S-BAND Radar (3.1 to 3.5 GHz) |
Philips |
| 162 |
SKY12233-11 |
High IIP3 2.1 to 3.1 GHz Voltage-Controlled Variable Attenuator |
Skyworks Solutions |
| 163 |
SLA-360 |
High luminance/ small LEDs (3/ 3.1 mm) |
ROHM |
| 164 |
SLR-342 |
Reflecting small LEDs/ directly mountable (3.1 mm) |
ROHM |
| 165 |
SLR-343 |
STANDARD TYPE 3.1 CIRCULAR TYPE LED LAMPS |
ROHM |
| 166 |
SLR343 |
HIGH BRIGHTNESS TYPE 3.1 CIRCULAR TYPE LED LAMPS |
ROHM |
| 167 |
SLR343BBT |
HIGH BRIGHTNESS TYPE 3.1 CIRCULAR TYPE LED LAMPS |
ROHM |
| 168 |
SLR343BCT |
HIGH BRIGHTNESS TYPE 3.1 CIRCULAR TYPE LED LAMPS |
ROHM |
| 169 |
SLR343BDT |
HIGH BRIGHTNESS TYPE 3.1 CIRCULAR TYPE LED LAMPS |
ROHM |
| 170 |
SLR343EBT |
HIGH BRIGHTNESS TYPE 3.1 CIRCULAR TYPE LED LAMPS |
ROHM |
| 171 |
SLR343EDT |
HIGH BRIGHTNESS TYPE 3.1 CIRCULAR TYPE LED LAMPS |
ROHM |
| 172 |
SMBJ5951A |
1.5W silicon surface mount zener diode. Zener voltage 120 V. Test current 3.1 mA. +-10% tolerance. |
Jinan Gude Electronic Device |
| 173 |
SMBJ5951B |
1.5W silicon surface mount zener diode. Zener voltage 120 V. Test current 3.1 mA. +-5% tolerance. |
Jinan Gude Electronic Device |
| 174 |
SMBJ5951C |
1.5W silicon surface mount zener diode. Zener voltage 120 V. Test current 3.1 mA. +-2% tolerance. |
Jinan Gude Electronic Device |
| 175 |
SMBJ5951D |
1.5W silicon surface mount zener diode. Zener voltage 120 V. Test current 3.1 mA. +-1% tolerance. |
Jinan Gude Electronic Device |
| 176 |
SPB80N03S2-03 |
Low Voltage MOSFETs - OptiMOS Power MOSFET, 30V, D2PAK, RDSon = 3.1 mOhm, 80A, NL |
Infineon |
| 177 |
ST23YR18CD21REV3 |
Dual interface / Calypso revision 3.1 with 4,8 or 18KB EEPROM |
ST Microelectronics |
| 178 |
STB120N4LF6 |
N-channel 40 V, 3.1 mOhm, 80 A, D2PAK STripFET(TM) VI DeepGATE(TM) Power MOSFET |
ST Microelectronics |
| 179 |
STD120N4LF6 |
N-channel 40 V, 3.1 mOhm, 80 A, DPAK STripFET(TM) VI DeepGATE(TM) Power MOSFET |
ST Microelectronics |
| 180 |
TGA2813 |
3.1 - 3.6 GHz, 100 Watt GaN Power Amplifier |
Qorvo |
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