| No. |
Part Name |
Description |
Manufacturer |
| 151 |
2SC3073 |
SILICON NPN EPITAXIAL TYPE(PCT PROCESS) |
TOSHIBA |
| 152 |
2SC3074 |
Transistor Silicon NPN Epitaxial Type (PCT process) High Current Switching Applications |
TOSHIBA |
| 153 |
2SC3075 |
Transistor Silicon NPN Triple Diffused Type (PCT process) Switching Regulator and High Voltage Switching Applications DC-DC Converter Applications DC-AC Converter Applications |
TOSHIBA |
| 154 |
2SC3076 |
Transistor Silicon NPN Epitaxial Type (PCT process) Power Amplifier Applications Power Switching Applications |
TOSHIBA |
| 155 |
2SC3077 |
Si NPN planar. UHF amplifier, mixer. |
Panasonic |
| 156 |
2SC3307 |
Silicon NPN Power Transistors TO-3PL package |
Savantic |
| 157 |
2SC3307 |
TRANSISTOR SILICON NPN TRIPLE DIFFUSED TYPE. HIGH SPEED AND HIGH VOLTAGE SWITCHING APPLICATIONS. SWITCHING REGULATOR APPLICATIONS. HIGH SPEED DC-DC CONVERTER APPLICATIONS. |
TOSHIBA |
| 158 |
2SC5307 |
TRANSISTOR SILICON NPN TRIPLE DIFFUSED TYPE. HIGH VOLTAGE SWITCHING APPLICATIONS. |
TOSHIBA |
| 159 |
2SD2307 |
TAPED POWER TRANSISTOR PACKAGE FOR USE WITH AN AUTOMATIC PLACEMENT MACHINE |
ROHM |
| 160 |
2SJ307 |
P-Channel Silicon MOSFET Ultrahigh-Speed Switching Applications |
SANYO |
| 161 |
2SK1307 |
Silicon N Channel MOS FET |
Hitachi Semiconductor |
| 162 |
2SK1307 |
Silicon N-Channel MOS FET |
Hitachi Semiconductor |
| 163 |
2SK1307 |
Transistors>Switching/MOSFETs |
Renesas |
| 164 |
2SK3070 |
Silicon N Channel MOS FET High Speed Power Switching |
Hitachi Semiconductor |
| 165 |
2SK3070(L) |
Power switching MOSFET |
Hitachi Semiconductor |
| 166 |
2SK3070(S) |
Power switching MOSFET |
Hitachi Semiconductor |
| 167 |
2SK3070L |
Silicon N Channel MOS FET High Speed Power Switching |
Hitachi Semiconductor |
| 168 |
2SK3070L |
Transistors>Switching/MOSFETs |
Renesas |
| 169 |
2SK3070S |
Silicon N Channel MOS FET High Speed Power Switching |
Hitachi Semiconductor |
| 170 |
2SK3070S |
Transistors>Switching/MOSFETs |
Renesas |
| 171 |
2SK3072 |
N-Channel Silicon MOSFET Ultrahigh-Speed Switching Applications |
SANYO |
| 172 |
2SK3074 |
FIELD EFFECT TRANSISTOR SILICON N CHANNEL MOS TYPE RF POWER MOSFET FOR VHF .AND UHF-BAND POWER AMPLIFIER |
TOSHIBA |
| 173 |
2SK3075 |
FIELD EFFECT TRANSISTOR SILICON N CHANNEL MOS TYPE RF POWER MOSFET FOR VHF .AND UHF .BAND POWER AMPLIFIER |
TOSHIBA |
| 174 |
2SK3076 |
Silicon N Channel MOS FET High Speed Power Switching |
Hitachi Semiconductor |
| 175 |
2SK3076(L) |
Power switching MOSFET |
Hitachi Semiconductor |
| 176 |
2SK3076(S) |
Power switching MOSFET |
Hitachi Semiconductor |
| 177 |
2SK3076L |
Silicon N Channel MOS FET High Speed Power Switching |
Hitachi Semiconductor |
| 178 |
2SK3076S |
Silicon N Channel MOS FET High Speed Power Switching |
Hitachi Semiconductor |
| 179 |
2SK3077 |
FIELD EFFECT TRANSISTOR SILICON N CHANNEL MOS TYPE 900 MHz BAND AMPLIFIER APPLICATIONS (GSM) |
TOSHIBA |
| 180 |
2SK3077A |
Field Effect Transistor Silicon N Channel MOS Type VHF/UHF Band Amplifier Applications |
TOSHIBA |
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