No. |
Part Name |
Description |
Manufacturer |
151 |
BD177-10 |
3A plastic 30W medium power silicon NPN transistor |
Motorola |
152 |
BD177-6 |
3A plastic 30W medium power silicon NPN transistor |
Motorola |
153 |
BD178 |
3A plastic medium power 30W PNP silicon transistor |
Motorola |
154 |
BD178-10 |
3A plastic medium power 30W PNP silicon transistor |
Motorola |
155 |
BD178-6 |
3A plastic medium power 30W PNP silicon transistor |
Motorola |
156 |
BD179-6 |
3A plastic 30W medium power silicon NPN transistor |
Motorola |
157 |
BD180-10 |
3A plastic medium power 30W PNP silicon transistor |
Motorola |
158 |
BD180-6 |
3A plastic medium power 30W PNP silicon transistor |
Motorola |
159 |
BD239 |
2A Complementary silicon plastic 30W power NPN transistor 45V |
Motorola |
160 |
BD239A |
2A Complementary silicon plastic 30W power NPN transistor 60V |
Motorola |
161 |
BD239B |
2A Complementary silicon plastic 30W power NPN transistor 80V |
Motorola |
162 |
BD239C |
2A Complementary silicon plastic 30W power NPN transistor 100V |
Motorola |
163 |
BD240 |
Epitaxial-base silicon P-N-P VERSAWATT transistor. Vcer -55V, 30W. |
General Electric Solid State |
164 |
BD240A |
Epitaxial-base silicon P-N-P VERSAWATT transistor. Vcer -70V, 30W. |
General Electric Solid State |
165 |
BD240B |
Epitaxial-base silicon P-N-P VERSAWATT transistor. Vcer -90V, 30W. |
General Electric Solid State |
166 |
BD240C |
Epitaxial-base silicon P-N-P VERSAWATT transistor. Vcer -115V, 30W. |
General Electric Solid State |
167 |
BF2030W |
RF-MOSFET - integrated semi biasing network, VDS=5V, gfs=31mS, Gp=23dB, F=1.5dB |
Infineon |
168 |
BF2030W |
Silicon N-Channel MOSFET Tetrode (For low noise, high gain controlled input stages up to 1GHz Operating voltage 5V) |
Siemens |
169 |
BFU530W |
NPN wideband silicon RF transistor |
NXP Semiconductors |
170 |
BYC30W-600P |
Hyperfast power diode |
NXP Semiconductors |
171 |
BYC30WT-600P |
Hyperfast power diode |
NXP Semiconductors |
172 |
BZX84C30W |
Zener Diodes |
Diodes |
173 |
BZX84C30W |
Silicon 200 mWatt Zener Diodes |
Micro Commercial Components |
174 |
BZX84C30W |
SURFACE MOUNT SILICON ZENER DIODES |
Panjit International Inc |
175 |
BZX84C30W-7-F |
Zener Diodes |
Diodes |
176 |
CG2H80030D |
30W, 8.0 GHz, GaN HEMT Die |
Wolfspeed |
177 |
CGH27030 |
30W, 28V, GaN HEMT for Linear Communications ranging from VHF to 3 GHz |
Wolfspeed |
178 |
CGH27030S |
30W, DC - 6.0 GHz, 28V, GaN HEMT |
Wolfspeed |
179 |
CGH35030 |
30W, 3300 - 3900 MHz, 28V, GaN HEMT for WiMAX |
Wolfspeed |
180 |
CGH55030F1/P1 |
30W, 5500 - 5800 MHz, 28V, GaN HEMT for WiMAX |
Wolfspeed |
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