No. |
Part Name |
Description |
Manufacturer |
151 |
2SC313 |
Silicon NPN Epitaxial Planar Transistor, intended for use in UHF Tuner Local Oscillator |
Hitachi Semiconductor |
152 |
2SC313 |
Transistor - JEIDA Series |
National Semiconductor |
153 |
2SC313 |
Trans GP BJT NPN 160V 0.7A 3-Pin TO-126 |
New Jersey Semiconductor |
154 |
2SC3130 |
Small-signal device - Small-signal transistor - High-Frequency for Tuners |
Panasonic |
155 |
2SC3133 |
RF POWER TRANSISTOR NPN EPITAXIAL PLANAR TYPE |
Mitsubishi Electric Corporation |
156 |
2SC3134 |
NPN Epitaxial Planar Silicon Transistors High Vebo, AF Amp Applications |
SANYO |
157 |
2SC3135 |
NPN Epitaxial Planar Silicon Transistors High-hFE, AF Amp Applications |
SANYO |
158 |
2SC3136 |
Silicon NPN epitaxial planar transistor |
TOSHIBA |
159 |
2SC3137 |
Silicon NPN epitaxial planar transistor |
TOSHIBA |
160 |
2SC3138 |
Transistor Silicon NPN Triple Diffused Type (PCT process) High Voltage Switching Applications |
TOSHIBA |
161 |
2SC3139 |
CLASS A, 860MHz 24V power transistor (This datasheet of NEL080120-28 is also the datasheet of 2SC3139, see the Electrical Characteristics table) |
NEC |
162 |
2SC3139 |
CLASS A, 860MHz 24V power transistor (This datasheet of NEL080120-28 is also the datasheet of 2SC3139, see the Electrical Characteristics table) |
NEC |
163 |
2SC313H |
Silicon NPN Epitaxial Planar Transistor, intended for use in UHF Tuner Local Oscillator |
Hitachi Semiconductor |
164 |
2SC3313 |
Small-signal device - Small-signal transistor - High-Frequency Amplifiers and Others |
Panasonic |
165 |
2SC4313 |
2SC4313 |
Shindengen |
166 |
2SC4313 |
2SC4313 |
Shindengen |
167 |
2SD1313 |
POWER TRANSISTORS(25A,350V,200W) |
MOSPEC Semiconductor |
168 |
2SD1313 |
Silicon NPN Power Transistors TO-3PL package |
Savantic |
169 |
2SD1313 |
TRANSISTOR SILICON NPN TRIPLE DIFFUSED TYPE. HIGH POWER AMPLIFIER APPLICATIONS. HIGH POWER SWITCHING APPLICATIONS. |
TOSHIBA |
170 |
2SD313 |
POWER TRANSISTORS(3A,60V,30W) |
MOSPEC Semiconductor |
171 |
2SD313 |
Silicon NPN Power Transistors TO-220C package |
Savantic |
172 |
2SD313 |
NPN silicon plastic power transistor. Designed for low frequency power amplifier. Vceo =60V, DC current gain: 40 @ Ic = 2A. Pd = 30W. |
USHA India LTD |
173 |
2SD313 |
NPN EPITAXIAL SILICON TRANSISTOR(LOW FREQUENCY POWER AMPLIFIER) |
Wing Shing Computer Components |
174 |
2SJ313 |
Field Effect Transistor Silicon P Channel MOS Type Audio Frequency Power Amplifier Application |
TOSHIBA |
175 |
2SK1313 |
Silicon N-Channel MOS FET |
Hitachi Semiconductor |
176 |
2SK1313(L) |
Power switching MOSFET |
Hitachi Semiconductor |
177 |
2SK1313(L)/(S) |
Silicon N Channel MOS FET |
Hitachi Semiconductor |
178 |
2SK1313(S) |
Power switching MOSFET |
Hitachi Semiconductor |
179 |
2SK1313L |
Silicon N-Channel MOS FET |
Hitachi Semiconductor |
180 |
2SK1313L |
Transistors>Switching/MOSFETs |
Renesas |
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