| No. |
Part Name |
Description |
Manufacturer |
| 151 |
MC78LC33NTR |
MICROPOWER ULTRA-LOW QUIESCENT CURRENT VOLTAGE REGULATORS |
Motorola |
| 152 |
MC78LC33NTR |
MicroPower Voltage Regulator |
ON Semiconductor |
| 153 |
MC78PC33NTR |
Low Noise 150 mA Low Drop Out(LDO) Linear Voltage Regulator |
ON Semiconductor |
| 154 |
MCA1933N |
6.8V Reference amplifiers for use in regulated power supplies as a combination reference element and error voltage amplifier |
Motorola |
| 155 |
MCA2033N |
8.6V Reference amplifiers for use in regulated power supplies as a combination reference element and error voltage amplifier |
Motorola |
| 156 |
MCA2133N |
9.5V Reference amplifiers for use in regulated power supplies as a combination reference element and error voltage amplifier |
Motorola |
| 157 |
MCA2233N |
11.0V Reference amplifiers for use in regulated power supplies as a combination reference element and error voltage amplifier |
Motorola |
| 158 |
MM74HC133N |
13-Input NAND Gate |
National Semiconductor |
| 159 |
MN103LF33N |
MN103L Series embedded Panasonic core |
Panasonic |
| 160 |
MN103S33N |
Microcomputer - 32bit - General Purpose |
Panasonic |
| 161 |
MSAEZ33N20A |
N-CHANNEL ENHANCEMENT MODE POWER MOSFET |
Microsemi |
| 162 |
MSAFZ33N20A |
N-CHANNEL ENHANCEMENT MODE POWER MOSFET |
Microsemi |
| 163 |
MSP50C33N |
MIXED-SIGNAL PROCESSORS |
Texas Instruments |
| 164 |
MSS1038-333NLB |
SMT Power Inductors |
etc |
| 165 |
MSS1038-333NLC |
SMT Power Inductors |
etc |
| 166 |
MSS1038-333NLD |
SMT Power Inductors |
etc |
| 167 |
MTB33N10E |
TMOS POWER FET 33 AMPERES 100 VOLTS |
Motorola |
| 168 |
MTB33N10E |
Power MOSFET 33 Amps, 100 Volts |
ON Semiconductor |
| 169 |
MTB33N10E-D |
Power MOSFET 33 Amps, 100 Volts N-Channel D2PAK |
ON Semiconductor |
| 170 |
MTP33N10 |
TMOS POWER FET 33 AMPERES 100 VOLTS RDS(on) = 0.06 OHM |
Motorola |
| 171 |
MTP33N10E |
TMOS POWER FET 33 AMPERES 100 VOLTS RDS(on) = 0.06 OHM |
Motorola |
| 172 |
MTP33N10E |
SPP Power NChannel |
ON Semiconductor |
| 173 |
MTP33N10E-D |
TMOS E-FET Power Field Effect Transistor N-Channel Enhancement-Mode Silicon Gate |
ON Semiconductor |
| 174 |
MTW33N10E |
TMOS POWER FET 33 AMPERES 100 VOLTS RDS(on) = 0.06 OHM |
Motorola |
| 175 |
N74F133N |
13-input NAND gate |
NXP Semiconductors |
| 176 |
N74F133N |
13.input NAND Gate |
Philips |
| 177 |
N74F533N |
Latch/flip-flop |
Philips |
| 178 |
NDH833N |
Length/Height 1.02 mm Width 4.55 mm Depth 4.06 mm Power dissipation 1.8 W Transistor polarity N Channel Current Id cont. 7.1 A Voltage Vgs th max. 2.7 V Voltage Vds max 20 V |
Fairchild Semiconductor |
| 179 |
NDH833N |
N-Channel Enhancement Mode Field Effect Transistor |
National Semiconductor |
| 180 |
NE5533N |
Dual and single low noise op amp |
Philips |
| | | |
