| No. |
Part Name |
Description |
Manufacturer |
| 151 |
2N235B |
Trans GP BJT NPN 15V 6-Pin Case U |
New Jersey Semiconductor |
| 152 |
2N335B |
Silicon NPN Transistor |
Motorola |
| 153 |
2N335B |
Trans GP BJT NPN 3-Pin TO-5 |
New Jersey Semiconductor |
| 154 |
2N535B |
Germanium PNP Transistor |
Motorola |
| 155 |
3SMAJ5935B |
ZENER DIODES |
Micro Commercial Components |
| 156 |
3SMBJ5935B |
ZENER DIODES |
Micro Commercial Components |
| 157 |
4035BP |
4-stage parallel in/parallel out shift register |
TOSHIBA |
| 158 |
489D105X035B46V |
Resin-Coated, Radial-Lead Solid Tantalum Capacitors |
Vishay |
| 159 |
489D684X035B46V |
Resin-Coated, Radial-Lead Solid Tantalum Capacitors |
Vishay |
| 160 |
535BH |
Quad 2 INPUT Gate |
Amelco Semiconductor |
| 161 |
5962H3829435BNA |
Radiation-Hardened 8Kx8 SRAM: SMD. Total dose 1E6 rads(Si). 85ns access time. QML class Q. Lead finish solder. |
Aeroflex Circuit Technology |
| 162 |
5962H3829435BNC |
Radiation-Hardened 8Kx8 SRAM: SMD. Total dose 1E6 rads(Si). 85ns access time. QML class Q. Lead finish gold. |
Aeroflex Circuit Technology |
| 163 |
5962H3829435BNX |
Radiation-Hardened 8Kx8 SRAM: SMD. Total dose 1E6 rads(Si). 85ns access time. QML class Q. Lead finish optional. |
Aeroflex Circuit Technology |
| 164 |
5962H3829435BXA |
Radiation-Hardened 8Kx8 SRAM: SMD. Total dose 1E6 rads(Si). 85ns access time. QML class Q. Lead finish solder. |
Aeroflex Circuit Technology |
| 165 |
5962H3829435BXC |
Radiation-Hardened 8Kx8 SRAM: SMD. Total dose 1E6 rads(Si). 85ns access time. QML class Q. Lead finish gold. |
Aeroflex Circuit Technology |
| 166 |
5962H3829435BXX |
Radiation-Hardened 8Kx8 SRAM: SMD. Total dose 1E6 rads(Si). 85ns access time. QML class Q. Lead finish optional. |
Aeroflex Circuit Technology |
| 167 |
5962R3829435BNA |
Radiation-Hardened 8Kx8 SRAM: SMD. Total dose 5E5 rads(Si). 85ns access time. QML class Q. Lead finish solder. |
Aeroflex Circuit Technology |
| 168 |
5962R3829435BNC |
Radiation-Hardened 8Kx8 SRAM: SMD. Total dose 5E5 rads(Si). 85ns access time. QML class Q. Lead finish gold. |
Aeroflex Circuit Technology |
| 169 |
5962R3829435BNX |
Radiation-Hardened 8Kx8 SRAM: SMD. Total dose 5E5 rads(Si). 85ns access time. QML class Q. Lead finish optional. |
Aeroflex Circuit Technology |
| 170 |
5962R3829435BXA |
Radiation-Hardened 8Kx8 SRAM: SMD. Total dose 5E5 rads(Si). 85ns access time. QML class Q. Lead finish solder. |
Aeroflex Circuit Technology |
| 171 |
5962R3829435BXC |
Radiation-Hardened 8Kx8 SRAM: SMD. Total dose 5E5 rads(Si). 85ns access time. QML class Q. Lead finish gold. |
Aeroflex Circuit Technology |
| 172 |
5962R3829435BXX |
Radiation-Hardened 8Kx8 SRAM: SMD. Total dose 5E5 rads(Si). 85ns access time. QML class Q. Lead finish optional. |
Aeroflex Circuit Technology |
| 173 |
835B |
SILICON 28V HYPERABRUPT VARACTOR DIODES |
Zetex Semiconductors |
| 174 |
893D |
Solid Tantalum Chip Capacitors, TANTAMOUNT®, Built-In-Fuse Miniature, Molded Case in Three Case Codes, Fusible, Meets EIA 535BAAC and IEC Specification QC300801/US0001, Automatic Pick and Place Compatible |
Vishay |
| 175 |
ACZRM5235B-HF |
Halogen Free Zener Diodes, PD=0.5Watts, VZ=6.8V |
Comchip Technology |
| 176 |
ACZRW5235B-G |
Zener Diodes, PD=0.35Watts, VZ=6.8V |
Comchip Technology |
| 177 |
AD5235BRU25 |
Nonvolatile Memory, Dual 1024 Position Digital Potentiometers |
Analog Devices |
| 178 |
AD5235BRU250 |
Nonvolatile Memory, Dual 1024 Position Digital Potentiometers |
Analog Devices |
| 179 |
AD5335BRU |
2.5 V to 5.5 V, 500 uA, Parallel Interface Quad Voltage-Output 8-/10-/12-Bit DACs |
Analog Devices |
| 180 |
AD5535B |
32-Channel, 14-Bit DAC with Full-Scale Output Voltage Programmable from 50 V to 200 V |
Analog Devices |
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