| No. |
Part Name |
Description |
Manufacturer |
| 151 |
2N3602 |
Germanium PNP Transistor |
Motorola |
| 152 |
2N3603 |
Germanium PNP Transistor |
Motorola |
| 153 |
2N3604 |
Germanium PNP Transistor |
Motorola |
| 154 |
2N3605 |
Silicon NPN Transistor |
Motorola |
| 155 |
2N3605A |
Silicon NPN Transistor |
Motorola |
| 156 |
2N3606 |
Silicon NPN Transistor |
Motorola |
| 157 |
2N3606A |
Silicon NPN Transistor |
Motorola |
| 158 |
2N3607 |
Silicon NPN Transistor |
Motorola |
| 159 |
2N3608 |
P-Channel FIELD-EFFECT TRANSISTOR MOS FET |
Motorola |
| 160 |
2N3609 |
P-Channel FIELD-EFFECT TRANSISTOR MOS FET |
Motorola |
| 161 |
2N3707 |
0.360W General Purpose NPN Plastic Leaded Transistor. 30V Vceo, 0.200A Ic, 100 - 400 hFE |
Continental Device India Limited |
| 162 |
2N3712 |
360mW NPN silicon general purpose AF transistor |
Micro Electronics |
| 163 |
2N4360 |
P-Channel Junction (Field-Effect Transistor) |
Motorola |
| 164 |
2N5360 |
Silicon N-channel junction field-effect transistor |
Motorola |
| 165 |
2N5360 |
N-Channel Junction FET (Field-Effect Transistor) |
Motorola |
| 166 |
2N6360 |
Trans GP BJT NPN 150V 25A 3-Pin(2+Tab) TO-3 |
New Jersey Semiconductor |
| 167 |
2N6360 |
Silicon NPN Power Transistors TO-3 package |
Savantic |
| 168 |
2N7002P |
60 V, 360 mA N-channel Trench MOSFET |
Nexperia |
| 169 |
2N7002P |
60 V, 360 mA N-channel Trench MOSFET |
NXP Semiconductors |
| 170 |
2N708 |
0.360W General Purpose NPN Metal Can Transistor. 15V Vceo, 0.200A Ic, 30 - 120 hFE. |
Continental Device India Limited |
| 171 |
2N915 |
0.360W General Purpose NPN Metal Can Transistor. 50V Vceo, A Ic, 50 - 200 hFE. |
Continental Device India Limited |
| 172 |
2SA1360 |
Trans GP BJT PNP 150V 0.05A 3-Pin TO-126IS |
New Jersey Semiconductor |
| 173 |
2SA1360 |
Silicon PNP Power Transistors TO-126 package |
Savantic |
| 174 |
2SA1360 |
TRANSISTOR SILICON PNP EPITAXIAL TYPE (PCT PROCESS) AUDIO FREQUENCY POWER AMPLIFIER APPLICATIONS |
TOSHIBA |
| 175 |
2SB1360 |
TAPED POWER TRANSISTOR PACKAGE FOR USE WITH AN AUTOMATIC PLACEMENT MACHINE |
ROHM |
| 176 |
2SC1360 |
Small-signal device - Small-signal transistor - General-use Low-Frequency Amplifires |
Panasonic |
| 177 |
2SC1360A |
Small-signal device - Small-signal transistor - General-use Low-Frequency Amplifires |
Panasonic |
| 178 |
2SC2360 |
Si NPN planar. UHF amplifier. |
Panasonic |
| 179 |
2SC2360(H) |
Si NPN planar. UHF amplifier. UNF mixer |
Panasonic |
| 180 |
2SC3360 |
HIGH VOLTAGE AMPLIFIER AND SWITCHING NPN SILICON EPITAXIAL TRANSISTOR MINI MOLD |
NEC |
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