| No. |
Part Name |
Description |
Manufacturer |
| 151 |
2N6365 |
Trans GP BJT NPN 150V 25A 3-Pin(2+Tab) TO-3 |
New Jersey Semiconductor |
| 152 |
2N6365A |
PNP germanium RF amplifier transistor |
Motorola |
| 153 |
2SA1365 |
FOR HIGH CURRENT DRIVE APPLICATION SILICON PNP EPITAXIAL TYPE |
Isahaya Electronics Corporation |
| 154 |
2SB365 |
Audio Frequency Transistor |
TOSHIBA |
| 155 |
2SB365 |
Low Frequency Medium Power Transistor |
TOSHIBA |
| 156 |
2SB365 |
Germanium PNP alloy junction transistor, audio power amplifier applications |
TOSHIBA |
| 157 |
2SC1365 |
NPN medium power UHF-VHF transistor (This datasheet of NE74113 is also the datasheet of 2SC1365, see the Electrical Characteristics table) |
NEC |
| 158 |
2SC1365 |
NPN medium power UHF-VHF transistor (This datasheet of NE74113 is also the datasheet of 2SC1365, see the Electrical Characteristics table) |
NEC |
| 159 |
2SC2365 |
TRANSISTOR |
Micro Electronic Instrument Inc |
| 160 |
2SC2365 |
Silicon NPN Power Transistors TO-3 package |
Savantic |
| 161 |
2SC3365 |
Silicon NPN Transistor |
Hitachi Semiconductor |
| 162 |
2SC3365 |
Silicon NPN Triple Diffused |
Hitachi Semiconductor |
| 163 |
2SC3365 |
Transistors>Switching/Bipolar |
Renesas |
| 164 |
2SC3365 |
Silicon NPN Power Transistors TO-3PN package |
Savantic |
| 165 |
2SC3650 |
NPN Epitaxial Planar Silicon Transistor High hFE, Low-Frequency General-Purpose Amplifier Applications |
SANYO |
| 166 |
2SC3651 |
High Gain, Low Frequency, General Purpose NPN Amplifier Transistor |
ON Semiconductor |
| 167 |
2SC3651 |
NPN Epitaxial Planar Silicon Transistor High hFE, Low-Frequency General-Purpose Amplifier Applications |
SANYO |
| 168 |
2SC3652 |
SILICON NPN EPITAXIAL HIGH FREQUENCY AMPLIFIER |
Hitachi Semiconductor |
| 169 |
2SC3657 |
TRANSISTOR SILICON NPN TRIPLE DIFFUSED TYPE. SWITCHING REGULATOR AND HIGH VOLTAGE SWITCHING APPLICATIONS. HIGH SPEED DC-DC CONVERTER APPLICATIONS. |
TOSHIBA |
| 170 |
2SC3658 |
HIGH VOLTAGE,HIGH POWER SWITCHING |
Hitachi Semiconductor |
| 171 |
2SC3658 |
Silicon NPN Power Transistors TO-3 package |
Savantic |
| 172 |
2SC3659 |
HIGH VOLTAGE,HIGH POWER SWITCHING |
Hitachi Semiconductor |
| 173 |
2SC4365 |
NPN Epitaxial Planar Silicon Transistor VHF, UHF/MIX. OSC. Low-Voltage High-Frequency Amplifier Applications |
SANYO |
| 174 |
2SJ365 |
60V SERIES POWER MOSFET |
Shindengen |
| 175 |
2SK1365 |
Field Effect Transistor Silicon N Channel MOS Type (pi-MOSII -5 ) Switching Power Supply Applications |
TOSHIBA |
| 176 |
2SK2365 |
SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE |
NEC |
| 177 |
2SK2365-S |
N-channel enhancement type DMOS |
NEC |
| 178 |
2SK2365-Z |
N-channel enhancement type DMOS |
NEC |
| 179 |
2SK3365 |
SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE |
NEC |
| 180 |
2SK3365-Z |
SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE |
NEC |
| | | |
