| No. |
Part Name |
Description |
Manufacturer |
| 151 |
2N5366 |
Silicon PNP Transistor |
Motorola |
| 152 |
2N5366 |
PNP Transistor - General purpose AMPS and switches |
National Semiconductor |
| 153 |
2N5366 |
Trans GP BJT PNP 40V 0.3A 3-Pin TO-92 T/R |
New Jersey Semiconductor |
| 154 |
2N5366_D26Z |
PNP General Purpose Amplifier |
Fairchild Semiconductor |
| 155 |
2N5366_D27Z |
PNP General Purpose Amplifier |
Fairchild Semiconductor |
| 156 |
2N5366_D75Z |
PNP General Purpose Amplifier |
Fairchild Semiconductor |
| 157 |
2N6366 |
NPN silicon RF power transistor 2.5W (PEP) 30MHz |
Motorola |
| 158 |
2N6366 |
Trans GP BJT NPN 150V 25A 3-Pin(2+Tab) TO-3 |
New Jersey Semiconductor |
| 159 |
2SA1366 |
150mW SMD PNP transistor, maximum rating: -50V Vceo, -400mA Ic, 90 to 500 hFE. Complementary 2SC3441 |
Isahaya Electronics Corporation |
| 160 |
2SB1000 |
LOW FREQUENCY POWER AMPLIFIER Complementary pair 2SD 1366 |
Hitachi Semiconductor |
| 161 |
2SB1000A |
LOW FREQUENCY POWER AMPLIFIER Complementary pair 2SD 1366A |
Hitachi Semiconductor |
| 162 |
2SB1366 |
Silicon PNP Power Transistors TO-220F package |
Savantic |
| 163 |
2SB1366F-O |
TO-220 Plastic-Encapsulate Biploar Transistors |
Micro Commercial Components |
| 164 |
2SB1366F-Y |
TO-220 Plastic-Encapsulate Biploar Transistors |
Micro Commercial Components |
| 165 |
2SC3660 |
Class AB/C UHF 28V push-pull transistor (This datasheet of NEM060C69-28 is also the datasheet of 2SC3660, see the Electrical Characteristics table) |
NEC |
| 166 |
2SC3660 |
Class AB/C UHF 28V push-pull transistor (This datasheet of NEM060C69-28 is also the datasheet of 2SC3660, see the Electrical Characteristics table) |
NEC |
| 167 |
2SC3660A |
Class AB/C UHF 28V push-pull transistor (This datasheet of NEM080C69-28 is also the datasheet of 2SC3660A, see the Electrical Characteristics table) |
NEC |
| 168 |
2SC3660A |
Class AB/C UHF 28V push-pull transistor (This datasheet of NEM080C69-28 is also the datasheet of 2SC3660A, see the Electrical Characteristics table) |
NEC |
| 169 |
2SC3661 |
NPN Epitaxial Planar Silicon Transistor High hFE, Low-Frequency General-Purpose Amplifier Applications |
SANYO |
| 170 |
2SC3663 |
NPN EPITAXIAL SILICON TRANSISTOR FOR HIGH-FREQUENCY LOW-NOISE AMPLIFICATION |
NEC |
| 171 |
2SC3663-L |
For amplify high frequency and low noise. |
NEC |
| 172 |
2SC3663-T1B |
For amplify high frequency and low noise. |
NEC |
| 173 |
2SC3663-T2B |
For amplify high frequency and low noise. |
NEC |
| 174 |
2SC3664 |
NPN Triple Diffused Planar Type Darlington Silicon Transistor 400V/20A Driver Applications |
SANYO |
| 175 |
2SC3665 |
TRANSISTOR SILICON NPN EPITAXIAL TYPE (PCT PROCESS) AUDIO POWER AMPLIFIER AND DRIVE STAGE AMPLIFIER APPLICATIONS |
TOSHIBA |
| 176 |
2SC3666 |
TRANSISTOR SILICON NPN EPITAXIAL TYPE (PCT PROCESS) AUDIO POWER AMPLIFIER APPLICATIONS |
TOSHIBA |
| 177 |
2SC3668 |
Transistor Silicon NPN Epitaxial Type (PCT process) Power Amplifier Applications Power Switching Applications |
TOSHIBA |
| 178 |
2SC3668 |
Transistor Silicon NPN Epitaxial Type (PCT process) Power Amplifier Applications Power Switching Applications |
TOSHIBA |
| 179 |
2SC3669 |
Transistor Silicon NPN Epitaxial Type (PCT process) Power Amplifier Applications Power Switching Applications |
TOSHIBA |
| 180 |
2SC366G |
Industrial Transistor Specification Table |
TOSHIBA |
| | | |
