| No. |
Part Name |
Description |
Manufacturer |
| 151 |
2N3673 |
Small Signal Transistors |
Central Semiconductor |
| 152 |
2N3673 |
Silicon PNP Transistor |
Motorola |
| 153 |
2N3675 |
Silicon NPN Transistor |
Motorola |
| 154 |
2N3676 |
Silicon NPN Transistor |
Motorola |
| 155 |
2N3677 |
Low Power Chopper Transistor PNP Silicon |
Motorola |
| 156 |
2N3677 |
Silicon PNP Transistor |
Motorola |
| 157 |
2N3677 |
Trans GP BJT NPN 55V 3-Pin TO-39 |
New Jersey Semiconductor |
| 158 |
2N3678 |
Leaded Small Signal Transistor General Purpose |
Central Semiconductor |
| 159 |
2N3678 |
Silicon NPN Transistor |
Motorola |
| 160 |
2N3678 |
NPN Transistor - General Purpose AMPS and Switches |
National Semiconductor |
| 161 |
2N3679 |
UNIJUNCTION TRANSISTOR |
Motorola |
| 162 |
2N4367 |
Silicon Controlled Rectifier |
Microsemi |
| 163 |
2N4367 |
THYRISTOR |
Motorola |
| 164 |
2N4367 |
Phase Control SCR 70 Amoeres Average(110 RMS) 1400 Volts |
Powerex Power Semiconductors |
| 165 |
2N5367 |
Leaded Small Signal Transistor General Purpose |
Central Semiconductor |
| 166 |
2N5367 |
PNP SILICON TRANSISTOR |
Micro Electronics |
| 167 |
2N5367 |
Silicon PNP Transistor |
Motorola |
| 168 |
2N5367 |
Trans GP BJT PNP 40V 0.3A 3-Pin TO-92 T/R |
New Jersey Semiconductor |
| 169 |
2N5367(R) |
PNP SILICON PLANAR TRANSISTOR |
Micro Electronics |
| 170 |
2N6367 |
NPN silicon RF power transistor 9W (PEP) 12.5V, up to 30MHz |
Motorola |
| 171 |
2N6367 |
Trans GP BJT NPN 150V 25A 3-Pin(2+Tab) TO-3 |
New Jersey Semiconductor |
| 172 |
2SB1367 |
Silicon PNP Power Transistors TO-220F package |
Savantic |
| 173 |
2SB367 |
Germanium PNP Alloyed Junction Transistor, intended for use in Audio Frequency Medium Power Output |
Hitachi Semiconductor |
| 174 |
2SB367H |
Germanium PNP Alloyed Junction Transistor, intended for use in Audio Frequency Medium Power Output, Medium Power Switching |
Hitachi Semiconductor |
| 175 |
2SC1367 |
Silicon NPN Power Transistors TO-3 package |
Savantic |
| 176 |
2SC2367 |
NPN SILICON HIGH FREQUENCY TRANSISTOR |
NEC |
| 177 |
2SC367 |
Low Frequency Medium Power Transistor |
TOSHIBA |
| 178 |
2SC3670 |
TRANSISTOR SILICON NPN EPITAXIAL TYPE (PCT PROCESS) STOROBO FLASH APPLICATIONS MEDIUM POWER AMPLIFIER APPLICATIONS |
TOSHIBA |
| 179 |
2SC3671 |
TRANSISTOR SILICON NPN EPITAXIAL TYPE (PCT PROCESS) STROBE FLASH APPLICATIONS MEDIUM POWER AMPLIFIER APPLICATIONS |
TOSHIBA |
| 180 |
2SC3672 |
TRANSISTOR SILICON NPN TRIPLE DIFFUSED TYPE (PCT PROCESS) HIGH VOLTAGE CONTROL APPLICATIONS, PLASMA DISPLAY, NIXIE TUBE DRIVER APPLICATIONS, CATHODE RAY TUBE BRIGHTNESS CONTROL APPLICATIONS |
TOSHIBA |
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