No. |
Part Name |
Description |
Manufacturer |
151 |
BFQ75 |
PNP Silicon RF Transistor (For broadband amplifiers up to 2 GHz at collector currents from 5 mA to 30 mA.) |
Siemens |
152 |
BFR181 |
NPN Silicon RF Transistor (For low noise, high-gain broadband amplifiers at collector currents from 0.5 mA to 12mA) |
Siemens |
153 |
BFR181W |
NPN Silicon RF Transistor )For low noise, high-gain broadband amplifiers at collector currents from 0.5 mA to 12mA) |
Siemens |
154 |
BFR92P |
NPN Silicon RF Transistor (For broadband amplifiers up to 2GHz and fast non-saturated switches at collector currents from 0.5 mA to 20 mA) |
Siemens |
155 |
BFR92W |
NPN Silicon RF Transistor (For broadband amplifiers up to 2GHz and fast non-saturated switches at collector currents from 0.5 mA to 20 mA) |
Siemens |
156 |
BFR93AW |
NPN Silicon RF Transistor (For low distortion broadband amplifiers and oscillators up to 2GHz at collector currents from 5 mA to 30 mA) |
Siemens |
157 |
BFY180 |
HiRel NPN Silicon RF Transistor (HiRel Discrete and Microwave Semiconductor For low power amplifiers at collector currents from 0.2 to 2.5 mA) |
Siemens |
158 |
BTA08-600CW3 |
Triac, 3 Quadrant Internally Isolated, 35 mA IGT, 8.0 A IT(RMS) |
ON Semiconductor |
159 |
BTA12-600CW3 |
Triac, 3 Quadrant Internally Isolated, 35 mA IGT, 12 A IT(RMS) |
ON Semiconductor |
160 |
BTA16-600CW3 |
Triac, 3 Quadrant Internally Isolated, 35 mA IGT, 16 A IT(RMS) |
ON Semiconductor |
161 |
BTA25-600CW3 |
Triac, 3 Quadrant Internally Isolated, 35 mA IGT, 25 A IT(RMS) |
ON Semiconductor |
162 |
BTA25-800CW |
Triac, 25A, sensitivity 35 mA, 800V |
SGS Thomson Microelectronics |
163 |
BTA26-600CW |
Triac, 25A, sensitivity 35 mA, 600V |
SGS Thomson Microelectronics |
164 |
BTA26-800CW |
Triac, 25A, sensitivity 35 mA, 800V |
SGS Thomson Microelectronics |
165 |
BTA30-600CW3 |
Triac, 3 Quadrant Internally Isolated, 35 mA IGT, 35 A IT(RMS) |
ON Semiconductor |
166 |
BTB24-600CW |
Triac, 25A, sensitivity 35 mA, 600V |
SGS Thomson Microelectronics |
167 |
BTB24-800CW |
Triac, 25A, sensitivity 35 mA, 800V |
SGS Thomson Microelectronics |
168 |
BZV58C180 |
180 V, 5 mA, 5 W glass passivated zener diode |
Fagor |
169 |
BZV58C200 |
200 V, 5 mA, 5 W glass passivated zener diode |
Fagor |
170 |
BZV85_C160 |
160 V, 1.5 mA, Silicon planar power diode |
GOOD-ARK Electronics |
171 |
BZV85_C180 |
180 V, 1.5 mA, Silicon planar power diode |
GOOD-ARK Electronics |
172 |
BZV85_C200 |
200 V, 1.5 mA, Silicon planar power diode |
GOOD-ARK Electronics |
173 |
BZX85C160GP |
160 V, 1.5 mA, 1.3 W glass passivated zener diode |
Fagor |
174 |
BZX85C180GP |
180 V, 1.5 mA, 1.3 W glass passivated zener diode |
Fagor |
175 |
BZX85C200GP |
200 V, 1.5 mA, 1.3 W glass passivated zener diode |
Fagor |
176 |
BZX85C220GP |
220 V, 1.5 mA, 1.3 W glass passivated zener diode |
Fagor |
177 |
BZX85_C160 |
160 V, 1.5 mA, Silicon planar power zener diode |
GOOD-ARK Electronics |
178 |
BZX85_C180 |
180 V, 1.5 mA, Silicon planar power zener diode |
GOOD-ARK Electronics |
179 |
BZX85_C200 |
200 V, 1.5 mA, Silicon planar power zener diode |
GOOD-ARK Electronics |
180 |
BZY97C100GP |
100 V, 5 mA, 1.5 W zener diode |
Fagor |
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