| No. |
Part Name |
Description |
Manufacturer |
| 151 |
1N5921C |
1.5 W, silicon zener diode. Zener voltage 6.8V. Test current 55.1 mA. +-2% tolerance. |
Jinan Gude Electronic Device |
| 152 |
1N5921D |
1.5 W, silicon zener diode. Zener voltage 6.8V. Test current 55.1 mA. +-1% tolerance. |
Jinan Gude Electronic Device |
| 153 |
1N5993 |
Diode Zener Single 5.1V 20% 500mW 2-Pin DO-35 |
New Jersey Semiconductor |
| 154 |
1N5993A |
Diode Zener Single 5.1V 10% 500mW 2-Pin DO-35 |
New Jersey Semiconductor |
| 155 |
1N5993B |
500 milliwatts glass silicon zener diode, zener voltage 5.1V |
Motorola |
| 156 |
1N5993B |
Diode Zener Single 5.1V 5% 500mW 2-Pin DO-35 |
New Jersey Semiconductor |
| 157 |
1N5993C |
Diode Zener Single 5.1V 2% 500mW 2-Pin DO-35 |
New Jersey Semiconductor |
| 158 |
1N5993D |
Diode Zener Single 5.1V 1% 500mW 2-Pin DO-35 |
New Jersey Semiconductor |
| 159 |
1N6084A |
Diode Zener Single 5.1V 10% 400mW 2-Pin DO-7 |
New Jersey Semiconductor |
| 160 |
1N6084B |
Diode Zener Single 5.1V 5% 400mW 2-Pin DO-7 |
New Jersey Semiconductor |
| 161 |
1N6084C |
Diode Zener Single 5.1V 2% 400mW 2-Pin DO-7 |
New Jersey Semiconductor |
| 162 |
1N6084D |
Diode Zener Single 5.1V 1% 400mW 2-Pin DO-7 |
New Jersey Semiconductor |
| 163 |
1N6118 |
Diode TVS Single Bi-Dir 25.1V 500W 2-Pin Case G-95 |
New Jersey Semiconductor |
| 164 |
1N6118A |
Diode TVS Single Bi-Dir 25.1V 500W 2-Pin |
New Jersey Semiconductor |
| 165 |
1N6154 |
Diode TVS Single Bi-Dir 25.1V 1.5KW 2-Pin |
New Jersey Semiconductor |
| 166 |
1N6154A |
Diode TVS Single Bi-Dir 25.1V 1.5KW 2-Pin |
New Jersey Semiconductor |
| 167 |
1N6291 |
Diode TVS Single Uni-Dir 55.1V 1.5KW 2-Pin Case 1 |
New Jersey Semiconductor |
| 168 |
1N6291C |
Diode TVS Single Bi-Dir 55.1V 1.5KW 2-Pin Case 1 |
New Jersey Semiconductor |
| 169 |
1N6317 |
Diode Zener Single 5.1V 5% 500mW 2-Pin DO-35 |
New Jersey Semiconductor |
| 170 |
1N6317US |
Diode Zener Single 5.1V 5% 500mW 2-Pin B-MELF |
New Jersey Semiconductor |
| 171 |
1N6490 |
Diode Zener Single 5.1V 5% 1.5W 2-Pin DO-41 |
New Jersey Semiconductor |
| 172 |
1N751 |
5.1 V, 400 mW silicon linear diode |
BKC International Electronics |
| 173 |
1N751 |
5.1V Professional Grade 400 mW Axial Zener Diode |
Continental Device India Limited |
| 174 |
1N751 |
500 mW silicon linear diode. Max zener impedance 17.0 Ohm, max zener voltage 5.1 V (Iz 20mA). |
Fairchild Semiconductor |
| 175 |
1N751 |
400mW, 5.1 Volts Silicon Glass Zener Diode |
ITT Semiconductors |
| 176 |
1N751 |
Zener Diode 5.1V |
Motorola |
| 177 |
1N751 |
Silicon Zener Diode 400mW 5.1V, ±10% tolerance |
Texas Instruments |
| 178 |
1N751A |
5.1 V, 400 mW silicon linear diode |
BKC International Electronics |
| 179 |
1N751A |
5.1V Professional Grade 400 mW Axial Zener Diode |
Continental Device India Limited |
| 180 |
1N751A |
500mW, silicon zener diode. Zener voltage 5.1 V. Test current 20 mA. +-5% tolerance. |
Jinan Gude Electronic Device |
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