| No. |
Part Name |
Description |
Manufacturer |
| 151 |
IRF820 |
2.5A, 500V, 3.000 Ohm, N-Channel Power MOSFET |
Fairchild Semiconductor |
| 152 |
IRF820FI |
N-channel enhancement mode power MOS transistor, 500V, 2.2A |
SGS Thomson Microelectronics |
| 153 |
IRF822 |
N-channel enhancement mode power MOS transistor, 500V, 2.8A |
SGS Thomson Microelectronics |
| 154 |
IRF822FI |
N-channel enhancement mode power MOS transistor, 500V, 1.9A |
SGS Thomson Microelectronics |
| 155 |
IRF830 |
4.5A, 500V, 1.500 Ohm, N-Channel Power MOSFET |
Fairchild Semiconductor |
| 156 |
IRF830L |
HEXFET power MOSFET. VDS = 500V, RDS(on) = 1.40 Ohm , ID = 5.0A |
International Rectifier |
| 157 |
IRF840 |
8A, 500V, 0.850 Ohm, N-Channel Power MOSFET |
Fairchild Semiconductor |
| 158 |
IRF840F1 |
N-channel HEXFET, 500V, 4.5A |
SGS Thomson Microelectronics |
| 159 |
IRFP32N50 |
Power MOSFET(Vdss=500V, Rds(on)typ.=0.135ohm, Id=32A) |
International Rectifier |
| 160 |
IRFP440 |
8.8A, 500V, 0.850 Ohm, N-Channel Power MOSFET |
Fairchild Semiconductor |
| 161 |
IRFP440 |
8.8A, 500V, 0.850 Ohm, N-Channel Power MOSFET |
Intersil |
| 162 |
IRFP450 |
14A, 500V, 0.400 Ohm, N-Channel Power MOSFET |
Fairchild Semiconductor |
| 163 |
IRFP450 |
14A, 500V, 0.400 Ohm, N-Channel Power MOSFET |
Intersil |
| 164 |
IRFP460 |
20A, 500V, 0.270 Ohm, N-Channel Power MOSFET |
Fairchild Semiconductor |
| 165 |
IRFP460 |
20A, 500V, 0.270 Ohm, N-Channel Power MOSFET |
Intersil |
| 166 |
IRFPS37N50 |
Power MOSFET(Vdss=500V, Rds(on)max=0.13ohm, Id=36A) |
International Rectifier |
| 167 |
IRFPS43N50 |
Power MOSFET(Vdss=500V, Rds(on)typ.=0.078ohm, Id=47A) |
International Rectifier |
| 168 |
IRFR410 |
1.5A, 500V, 7.000 Ohm, N-Channel Power MOSFETs |
Intersil |
| 169 |
IRFR420 |
2.5A, 500V, 3.000 Ohm, N-Channel Power MOSFETs |
Fairchild Semiconductor |
| 170 |
IRFR420 |
2.5A, 500V, 3.000 Ohm, N-Channel Power MOSFETs |
Intersil |
| 171 |
IRFU420 |
2.5A, 500V, 3.000 Ohm, N-Channel Power MOSFETs |
Intersil |
| 172 |
IRGB420 |
INSULATED GATE BIPOLAR TRANSISTOR(Vces=500V, @Vge=15V, Ic=7.5A) |
International Rectifier |
| 173 |
IRGB430 |
INSULATED GATE BIPOLAR TRANSISTOR(Vces=500V, @Vge=15V, Ic=15A) |
International Rectifier |
| 174 |
LND820 |
Power MOSFET, Vdss = 450V - 500V, Rds(on) = 3.0 ohm - 4.0 ohm, Id = 2.2A and 2.5A |
LinearDimensions |
| 175 |
LND821 |
Power MOSFET, Vdss = 450V - 500V, Rds(on) = 3.0 ohm - 4.0 ohm, Id = 2.2A and 2.5A |
LinearDimensions |
| 176 |
LND822 |
Power MOSFET, Vdss = 450V - 500V, Rds(on) = 3.0 ohm - 4.0 ohm, Id = 2.2A and 2.5A |
LinearDimensions |
| 177 |
LND823 |
Power MOSFET, Vdss = 450V - 500V, Rds(on) = 3.0 ohm - 4.0 ohm, Id = 2.2A and 2.5A |
LinearDimensions |
| 178 |
MAX6316LUK25AW-T |
Microprocessor supervisory circuit with watchdog and manual reset (watchdog input,manual reset input,reset output active-low,push/pull).Factory-trimmed reset threshold (typ) 2.500V, min reset timeout 1ms, typ watchdog timeout 6.3ms |
MAXIM - Dallas Semiconductor |
| 179 |
MAX6316LUK25AX-T |
Microprocessor supervisory circuit with watchdog and manual reset (watchdog input,manual reset input,reset output active-low,push/pull).Factory-trimmed reset threshold (typ) 2.500V, min reset timeout 1ms, typ watchdog timeout 102ms |
MAXIM - Dallas Semiconductor |
| 180 |
MAX6316LUK25AY-T |
Microprocessor supervisory circuit with watchdog and manual reset (watchdog input,manual reset input,reset output active-low,push/pull).Factory-trimmed reset threshold (typ) 2.500V, min reset timeout 1ms, typ watchdog timeout 1.6sec |
MAXIM - Dallas Semiconductor |
| | | |
