| No. |
Part Name |
Description |
Manufacturer |
| 151 |
1N4774A |
Diode Zener Single 9.1V 5% 250mW 2-Pin DO-7 |
New Jersey Semiconductor |
| 152 |
1N4775 |
Diode Zener Single 8.5V 5% 250mW 2-Pin DO-7 |
New Jersey Semiconductor |
| 153 |
1N4775A |
Diode Zener Single 8.5V 5% 250mW 2-Pin DO-7 |
New Jersey Semiconductor |
| 154 |
1N4776 |
Diode Zener Single 8.5V 5% 250mW 2-Pin DO-7 |
New Jersey Semiconductor |
| 155 |
1N4776A |
Diode Zener Single 8.5V 5% 250mW 2-Pin DO-7 |
New Jersey Semiconductor |
| 156 |
1N4777 |
Diode Zener Single 8.5V 5% 250mW 2-Pin DO-7 |
New Jersey Semiconductor |
| 157 |
1N4777A |
Diode Zener Single 8.5V 5% 250mW 2-Pin DO-7 |
New Jersey Semiconductor |
| 158 |
1N4778 |
Diode Zener Single 8.5V 5% 250mW 2-Pin DO-7 |
New Jersey Semiconductor |
| 159 |
1N4778A |
Diode Zener Single 8.5V 5% 250mW 2-Pin DO-7 |
New Jersey Semiconductor |
| 160 |
1N4779 |
Diode Zener Single 8.5V 5% 250mW 2-Pin DO-7 |
New Jersey Semiconductor |
| 161 |
1N4779A |
Diode Zener Single 8.5V 5% 250mW 2-Pin DO-7 |
New Jersey Semiconductor |
| 162 |
1N4780 |
Diode Zener Single 8.5V 5% 250mW 2-Pin DO-7 |
New Jersey Semiconductor |
| 163 |
1N4780A |
Diode Zener Single 8.5V 5% 250mW 2-Pin DO-7 |
New Jersey Semiconductor |
| 164 |
1N4781 |
Diode Zener Single 8.5V 5% 250mW 2-Pin DO-7 |
New Jersey Semiconductor |
| 165 |
1N4781A |
Diode Zener Single 8.5V 5% 250mW 2-Pin DO-7 |
New Jersey Semiconductor |
| 166 |
1N4782 |
Diode Zener Single 8.5V 5% 250mW 2-Pin DO-7 |
New Jersey Semiconductor |
| 167 |
1N4782A |
Diode Zener Single 8.5V 5% 250mW 2-Pin DO-7 |
New Jersey Semiconductor |
| 168 |
1N4783 |
Diode Zener Single 8.5V 5% 250mW 2-Pin DO-7 |
New Jersey Semiconductor |
| 169 |
1N4783A |
Diode Zener Single 8.5V 5% 250mW 2-Pin DO-7 |
New Jersey Semiconductor |
| 170 |
1N4784 |
Diode Zener Single 8.5V 5% 250mW 2-Pin DO-7 |
New Jersey Semiconductor |
| 171 |
1N4784A |
Diode Zener Single 8.5V 5% 250mW 2-Pin DO-7 |
New Jersey Semiconductor |
| 172 |
1SS400-G |
Small Signal Switching Diodes, VRRM=90V, VR=90V, PD=150mW, IF=100mA |
Comchip Technology |
| 173 |
210007039-002 |
350mWAudio Power Amplifier with Shutdown Mode |
Chengdu Sino Microelectronics System |
| 174 |
2N7002-G |
MOSFET, VDS=60V, ID=0.25A, PD=350mW |
Comchip Technology |
| 175 |
2N7002-HF |
Halogen Free MOSFET, VDS=60V, ID=0.25A, PD=350mW |
Comchip Technology |
| 176 |
2SA1366 |
150mW SMD PNP transistor, maximum rating: -50V Vceo, -400mA Ic, 90 to 500 hFE. Complementary 2SC3441 |
Isahaya Electronics Corporation |
| 177 |
2SA1995 |
450mW Lead frame PNP transistor, maximum rating: -50V Vceo, -100mA Ic, 120 to 560 hFE. |
Isahaya Electronics Corporation |
| 178 |
2SA542 |
Low frequency amplifier. Collector-base voltage: Vcbo = -30V. Collector-emitter voltage: Vceo = -25V. Emitter-base voltage Vebo = -5V. Collector dissipation: Pc(max) = 250mW. |
USHA India LTD |
| 179 |
2SA733 |
Low frequency amplifier. Collector-base voltage: Vcbo = -60V. Collector-emitter voltage: Vceo = -50V. Emitter-base voltage Vebo = -5V. Collector dissipation: Pc(max) = 250mW. |
USHA India LTD |
| 180 |
2SB592 |
750mW NPN silicon transistor |
Micro Electronics |
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