No. |
Part Name |
Description |
Manufacturer |
151 |
APT50N60JCCU2 |
Si MOSFET + SiC Diode Module |
Microsemi |
152 |
AS2350N |
Secondary Side Housekeeping Circuit |
ASTEC Semiconductor |
153 |
AS29F010-150LC |
5V 128K x 8 CMOS flash EEPROM, access time 150ns |
Alliance Semiconductor |
154 |
AS29F010-150PC |
5V 128K x 8 CMOS flash EEPROM, access time 150ns |
Alliance Semiconductor |
155 |
AS29F010-150TC |
5V 128K x 8 CMOS flash EEPROM, access time 150ns |
Alliance Semiconductor |
156 |
AS29F040-150LC |
5V 512K x 8 CMOS flash EEPROM, access time 150ns |
Alliance Semiconductor |
157 |
AS29F040-150LI |
5V 512K x 8 CMOS flash EEPROM, access time 150ns |
Alliance Semiconductor |
158 |
AS29F040-150TC |
5V 512K x 8 CMOS flash EEPROM, access time 150ns |
Alliance Semiconductor |
159 |
AS29F040-150TI |
5V 512K x 8 CMOS flash EEPROM, access time 150ns |
Alliance Semiconductor |
160 |
AS4C14400-50JC |
1M-bit � 4 CMOS DRAM fast page mode, single 5V power supply, 50ns |
Alliance Semiconductor |
161 |
AS4C14400-50TC |
1M-bit � 4 CMOS DRAM fast page mode, single 5V power supply, 50ns |
Alliance Semiconductor |
162 |
AS4C14405-50JC |
1M-bit � 4 CMOS DRAM EDO, single 5V power supply, 50ns |
Alliance Semiconductor |
163 |
AS4C14405-50TC |
1M-bit � 4 CMOS DRAM EDO, single 5V power supply, 50ns |
Alliance Semiconductor |
164 |
AS4C256K16E0-50JC |
5V 256K x 16 CM0S DRAM (EDO), 50ns RAS access time |
Alliance Semiconductor |
165 |
AS4C256K16E0-50TC |
5V 256K x 16 CM0S DRAM (EDO), 50ns RAS access time |
Alliance Semiconductor |
166 |
AS4C256K16F0-50JC |
5V 256K x 16 CM0S DRAM (fast page mode), 50ns RAS access time |
Alliance Semiconductor |
167 |
AS4C256K16F0-50JI |
5V 256K x 16 CM0S DRAM (fast page mode), 50ns RAS access time |
Alliance Semiconductor |
168 |
AS4C256K16F0-50TC |
5V 256K x 16 CM0S DRAM (fast page mode), 50ns RAS access time |
Alliance Semiconductor |
169 |
AS4C256K16F0-50TI |
5V 256K x 16 CM0S DRAM (fast page mode), 50ns RAS access time |
Alliance Semiconductor |
170 |
BQ4010MA-150N |
8Kx8 Nonvolatile SRAM |
Texas Instruments |
171 |
BQ4010YMA-150N |
8Kx8 Nonvolatile SRAM, 10% Voltage Tolerance |
Texas Instruments |
172 |
BQ4011MA-150N |
32Kx8 Nonvolatile SRAM |
Texas Instruments |
173 |
BQ4011YMA-150N |
32Kx8 Nonvolatile SRAM, 10% Voltage Tolerance |
Texas Instruments |
174 |
BS616UV1010CI |
150ns 15-10mA 1.8-2.6V ultra low power/voltage CMOS SRAM 64K x 16bit |
Brilliance Semiconductor |
175 |
BSO150N03 |
Low Voltage MOSFETs - OptiMOS�2 Power MOSFET, 30V, SO8, RDSon = 15mOhm, 9.1A, LL, dual |
Infineon |
176 |
BSO350N03 |
Low Voltage MOSFETs - OptiMOS�2 Power MOSFET, 30V, SO8, RDSon = 35mOhm, 6.0A, LL, dual |
Infineon |
177 |
BU6650NUX |
3ch CMOS LDO Regulators |
ROHM |
178 |
BU6650NUX-TR |
3ch CMOS LDO Regulators |
ROHM |
179 |
BU7150NUV |
Headphone Amplifier Designed for 0.93V Low Voltage Operation |
ROHM |
180 |
BU7150NUV-E2 |
Headphone Amplifier Designed for 0.93V Low Voltage Operation |
ROHM |
| | | |