No. |
Part Name |
Description |
Manufacturer |
151 |
HYB5116405BT-700 |
4M x 4bit DRAM |
Siemens |
152 |
I5116E |
SINGLE-CHIP 1 TO 16 MINUTES DURATION VOICE RECORD/PLAYBACK DEVICES WITH DIGITAL STORAGE CAPABILITY |
Winbond Electronics |
153 |
I5116EI |
SINGLE-CHIP 1 TO 16 MINUTES DURATION VOICE RECORD/PLAYBACK DEVICES WITH DIGITAL STORAGE CAPABILITY |
Winbond Electronics |
154 |
I5116S |
SINGLE-CHIP 1 TO 16 MINUTES DURATION VOICE RECORD/PLAYBACK DEVICES WITH DIGITAL STORAGE CAPABILITY |
Winbond Electronics |
155 |
I5116SI |
SINGLE-CHIP 1 TO 16 MINUTES DURATION VOICE RECORD/PLAYBACK DEVICES WITH DIGITAL STORAGE CAPABILITY |
Winbond Electronics |
156 |
I5116X |
SINGLE-CHIP 1 TO 16 MINUTES DURATION VOICE RECORD/PLAYBACK DEVICES WITH DIGITAL STORAGE CAPABILITY |
Winbond Electronics |
157 |
IFN5116 |
P-Channel silicon junction field-effect transistor |
InterFET Corporation |
158 |
IH5116 |
16-Channel Fault Protected CMOS Analog Multiplexer |
Intersil |
159 |
ISD5116 |
Single-Chip Voice Record/Playback Device Up to 16-Minute Duration with Digital Storage Capability |
Winbond Electronics |
160 |
ISD5116-SERIES |
Single-Chip Voice Record/Playback Device with Digital Memory Capability 8-, 10-, 12-, and 16-Minute Durations |
Winbond Electronics |
161 |
ISD5116E |
Single-Chip Voice Record/Playback Device Up to 16-Minute Duration with Digital Storage Capability |
Winbond Electronics |
162 |
ISD5116ED |
Single-Chip Voice Record/Playback Device Up to 16-Minute Duration with Digital Storage Capability |
Winbond Electronics |
163 |
ISD5116EI |
Single-Chip Voice Record/Playback Device Up to 16-Minute Duration with Digital Storage Capability |
Winbond Electronics |
164 |
ISD5116P |
Single-Chip Voice Record/Playback Device Up to 16-Minute Duration with Digital Storage Capability |
Winbond Electronics |
165 |
ISD5116S |
Single-Chip Voice Record/Playback Device Up to 16-Minute Duration with Digital Storage Capability |
Winbond Electronics |
166 |
ISD5116SD |
Single-Chip Voice Record/Playback Device Up to 16-Minute Duration with Digital Storage Capability |
Winbond Electronics |
167 |
ISD5116SI |
Single-Chip Voice Record/Playback Device Up to 16-Minute Duration with Digital Storage Capability |
Winbond Electronics |
168 |
ISD5116X |
Single-Chip Voice Record/Playback Device Up to 16-Minute Duration with Digital Storage Capability |
Winbond Electronics |
169 |
JAN2N5116 |
P Channel MOSFET |
Microsemi |
170 |
JANTX2N5116 |
P Channel MOSFET |
Microsemi |
171 |
JANTXV2N5116 |
P Channel MOSFET |
Microsemi |
172 |
K4H511638 |
512Mb C-die DDR SDRAM Specification |
Samsung Electronic |
173 |
K4H511638A-TCA0 |
128Mb DDR SDRAM |
Samsung Electronic |
174 |
K4H511638A-TCA2 |
128Mb DDR SDRAM |
Samsung Electronic |
175 |
K4H511638A-TCB0 |
128Mb DDR SDRAM |
Samsung Electronic |
176 |
K4H511638A-TLA0 |
128Mb DDR SDRAM |
Samsung Electronic |
177 |
K4H511638A-TLA2 |
128Mb DDR SDRAM |
Samsung Electronic |
178 |
K4H511638A-TLB0 |
128Mb DDR SDRAM |
Samsung Electronic |
179 |
K4H511638B-G |
512Mb B-die DDR SDRAM Specification |
Samsung Electronic |
180 |
K4H511638B-GC/LA2 |
512Mb B-die DDR SDRAM Specification |
Samsung Electronic |
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