| No. |
Part Name |
Description |
Manufacturer |
| 151 |
NX3L1G53GT |
Low-ohmic single-pole double-throw analog switch |
NXP Semiconductors |
| 152 |
PT6653G |
5Vout 5A 24V-Input Adjustable ISR |
Texas Instruments |
| 153 |
RA253GP |
STANDARD RECOVERY RECTIFIERS |
Micro Commercial Components |
| 154 |
RA353GP |
STANDARD RECOVERY RECTIFIERS |
Micro Commercial Components |
| 155 |
RB153G |
MINIATURE SINGLE PHASE 1.5 AMPS. GLASS PASSIVATED BRIDGE RECTIFIERS |
Jinan Gude Electronic Device |
| 156 |
RL153G |
1.5 AMP GLASS PASSIVATED RECTIFIERS |
Bytes |
| 157 |
RL153G |
1.5 AMP GLASS PASSIVATED RECTIFIERS |
Formosa MS |
| 158 |
RL153G |
GLASS PASSIVATED JUNCTION RECTIFIER |
GOOD-ARK Electronics |
| 159 |
RL153G |
1.5A GENERAL PURPOSE GPP DIODES |
Leshan Radio Company |
| 160 |
RL153G |
GLASS PASSIVATED JUNCTION PLASTIC RECTIFIER (VOLTAGE RANGE 50 to 1000 Volts CURRENT 1.5 Amperes) |
Rectron Semiconductor |
| 161 |
RL153G |
GLASS PASSIVATED JUNCTION RECTIFIER VOLTAGE: 50 TO 1000V CURRENT: 1.5A |
Shanghai Sunrise Electronics |
| 162 |
RL253G |
GLASS PASSIVATED JUNCTION RECTIFIER |
GOOD-ARK Electronics |
| 163 |
RL253GP |
2.5A, 200V ultra fast recovery rectifier |
MCC |
| 164 |
RL253GP |
2.5 Amp Glass Passivated Rectifier 50-1000 Volts |
Micro Commercial Components |
| 165 |
SDA9253GEG |
2.6Mbit Dynamic Sequential Access Mem... |
Infineon |
| 166 |
SRA253GP |
STANDARD RECOVERY RECTIFIERS |
Micro Commercial Components |
| 167 |
SRA353GP |
STANDARD RECOVERY RECTIFIERS |
Micro Commercial Components |
| 168 |
STM8TL53G4 |
8-bit, ultra-low-power, touch-sensing MCUs with 16-Kbyte Flash and proximity detection |
ST Microelectronics |
| 169 |
STM8TL53G4U6 |
8-bit, ultra-low-power, touch-sensing MCUs with 16-Kbyte Flash and proximity detection |
ST Microelectronics |
| 170 |
STM8TL53G4U6TR |
8-bit, ultra-low-power, touch-sensing MCUs with 16-Kbyte Flash and proximity detection |
ST Microelectronics |
| 171 |
SZ253G |
SURFACE MOUNT SILICON ZENER DIODES |
EIC discrete Semiconductors |
| 172 |
SZ453G |
SURFACE MOUNT SILICON ZENER DIODES |
EIC discrete Semiconductors |
| 173 |
T53G |
50A 300V 50A/µs THYRISTOR, the anode is electrically connected to the metal case |
IPRS Baneasa |
| 174 |
TAE1453G |
Single PNP-Operational Amplifier |
Infineon |
| 175 |
TAE1453G |
Single PNP-operational amplifier |
Siemens |
| 176 |
TAE1453GGEG |
Single PNP-Operational Amplifier |
Infineon |
| 177 |
TAE2453G |
Dual PNP-Operational Amplifier |
Infineon |
| 178 |
TAE2453G |
Dual PNP-operational amplifier |
Siemens |
| 179 |
TAE2453GGEG |
Dual PNP-Operational Amplifier |
Infineon |
| 180 |
TAE4453G |
Quad PNP-Operational Amplifier |
Infineon |
| | | |
