| No. |
Part Name |
Description |
Manufacturer |
| 151 |
2N5517 |
DUAL N-CHANNEL FETS |
New Jersey Semiconductor |
| 152 |
2N5518 |
DUAL N CHANNEL JFET LOW NOISE AMPLIFIER |
Intersil |
| 153 |
2N5518 |
N-Channel Junction FET (Field-Effect Transistor) |
Motorola |
| 154 |
2N5518 |
N-Channel FETs - low frequency - low noise dual JFETs |
National Semiconductor |
| 155 |
2N5518 |
DUAL N-CHANNEL FETS |
New Jersey Semiconductor |
| 156 |
2N5519 |
DUAL N CHANNEL JFET LOW NOISE AMPLIFIER |
Intersil |
| 157 |
2N5519 |
N-Channel Junction FET (Field-Effect Transistor) |
Motorola |
| 158 |
2N5519 |
N-Channel FETs - low frequency - low noise dual JFETs |
National Semiconductor |
| 159 |
2N5519 |
DUAL N-CHANNEL FETS |
New Jersey Semiconductor |
| 160 |
2N5551 |
NPN Silicon Transistor (General purpose amplifier High voltage application) |
AUK Corp |
| 161 |
2N5551 |
NPN EPITAXIAL PLANAR SILICON HIGH VOLTAGE TRANSISTOR |
Boca Semiconductor Corporation |
| 162 |
2N5551 |
Leaded Small Signal Transistor General Purpose |
Central Semiconductor |
| 163 |
2N5551 |
0.625W General Purpose NPN Plastic Leaded Transistor. 160V Vceo, 0.600A Ic, 80 - hFE |
Continental Device India Limited |
| 164 |
2N5551 |
NPN General Purpose Amplifier |
Fairchild Semiconductor |
| 165 |
2N5551 |
NPN Silicon Epitaxial Planar Transistor |
Honey Technology |
| 166 |
2N5551 |
High Voltage Transistor |
Korea Electronics (KEC) |
| 167 |
2N5551 |
TO-92 Plastic-Encapsulate Biploar Transistors |
Micro Commercial Components |
| 168 |
2N5551 |
SILICON GENERAL PURPOSE HIGH VOLTAGE TRANSISTORS |
Micro Electronics |
| 169 |
2N5551 |
Amplifier Transistors |
Motorola |
| 170 |
2N5551 |
NPN Transistor - General Purpose AMPS and Switches |
National Semiconductor |
| 171 |
2N5551 |
NPN General Purpose Amplifier |
National Semiconductor |
| 172 |
2N5551 |
Trans GP BJT NPN 160V 0.6A 3-Pin TO-92 Box |
New Jersey Semiconductor |
| 173 |
2N5551 |
Small Signal Amplifier NPN |
ON Semiconductor |
| 174 |
2N5551 |
NPN high-voltage transistors |
Philips |
| 175 |
2N5551 |
NPN Epitaxial Silicon Transistor |
Samsung Electronic |
| 176 |
2N5551 |
NPN Silicon Expitaxial Planar Transistor for general purpose/ high voltage amplifier applications |
Semtech |
| 177 |
2N5551 |
Silicon NPN epitaxial transistor (PCT Process) |
TOSHIBA |
| 178 |
2N5551 |
Amplifier transistor. Collector-emitter voltage: Vceo = 160V. Collector-base voltage: Vcbo = 180V. Collector dissipation: Pc(max) = 625mW. |
USHA India LTD |
| 179 |
2N5551-T |
Transistor |
Rectron Semiconductor |
| 180 |
2N5551BU |
NPN General Purpose Amplifier |
Fairchild Semiconductor |
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