| No. |
Part Name |
Description |
Manufacturer |
| 151 |
HY5V56D(L/S)F(P)-S |
SDRAM - 256Mb |
Hynix Semiconductor |
| 152 |
HY5V56D(L/S)F(P)-S |
SDRAM - 256Mb |
Hynix Semiconductor |
| 153 |
HY5V56DF |
SDRAM - 256Mb |
Hynix Semiconductor |
| 154 |
HY5V56DF |
SDRAM - 256Mb |
Hynix Semiconductor |
| 155 |
IDT77V400S156DS |
1.24 Gbps Switching Memory |
IDT |
| 156 |
IDT77V400S156DS1 |
SwitchStarTM ATM Cell Based 8 x 8 1.2Gbps non-blocking Integrated Switching Memory |
IDT |
| 157 |
IN556D |
Timing circuit |
INTEGRAL |
| 158 |
IRGB4056D |
600V UltraFast Copack Trench IGBT in a TO-220AB package |
International Rectifier |
| 159 |
IRGB4056DPBF |
600V UltraFast Copack Trench IGBT in a TO-220AB package |
International Rectifier |
| 160 |
IRGI4056D |
600V Low-Vceon Copack Trench IGBT in a TO-220 FullPak package |
International Rectifier |
| 161 |
IRGI4056DPBF |
600V Low-Vceon Copack Trench IGBT in a TO-220 FullPak package |
International Rectifier |
| 162 |
IRGS4056D |
600V Low VCEon Copack IGBT in a D2-Pak package |
International Rectifier |
| 163 |
IRGS4056DPBF |
600V Low VCEon Copack IGBT in a D2-Pak package |
International Rectifier |
| 164 |
ITF87056DQT |
5A/ 20V/ 0.045 Ohm/ Dual P-Channel/ 2.5V Specified Power MOSFET |
Intersil |
| 165 |
JAN1N756D-1 |
Zener Voltage Regulator Diode |
Microsemi |
| 166 |
JAN1N756DUR-1 |
Zener Voltage Regulator Diode |
Microsemi |
| 167 |
JANTX1N756D-1 |
Zener Voltage Regulator Diode |
Microsemi |
| 168 |
JANTX1N756DUR-1 |
Zener Voltage Regulator Diode |
Microsemi |
| 169 |
JANTXV1N756D-1 |
Zener Voltage Regulator Diode |
Microsemi |
| 170 |
JANTXV1N756DUR-1 |
Zener Voltage Regulator Diode |
Microsemi |
| 171 |
KA2656D |
LINEAR INTEGRATED CIRCUIT |
Samsung Electronic |
| 172 |
KA556D |
Dual Timer |
Fairchild Semiconductor |
| 173 |
KA556DTF |
Dual Timer |
Fairchild Semiconductor |
| 174 |
KM416C256D |
256K x 16Bit CMOS Dynamic RAM with Fast Page Mode |
Samsung Electronic |
| 175 |
KM416C256DJ-5 |
256K x 16Bit CMOS dynamic RAM with fast page mode, 50ns, 5V |
Samsung Electronic |
| 176 |
KM416C256DJ-6 |
256K x 16Bit CMOS dynamic RAM with fast page mode, 60ns, 5V |
Samsung Electronic |
| 177 |
KM416C256DJ-7 |
256K x 16Bit CMOS dynamic RAM with fast page mode, 70ns, 5V |
Samsung Electronic |
| 178 |
KM416C256DLJ-5 |
256K x 16Bit CMOS dynamic RAM with fast page mode, 50ns, 5V, self-refresh capability |
Samsung Electronic |
| 179 |
KM416C256DLJ-6 |
256K x 16Bit CMOS dynamic RAM with fast page mode, 60ns, 5V, self-refresh capability |
Samsung Electronic |
| 180 |
KM416C256DLJ-7 |
256K x 16Bit CMOS dynamic RAM with fast page mode, 70ns, 5V, self-refresh capability |
Samsung Electronic |
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