| No. |
Part Name |
Description |
Manufacturer |
| 151 |
HM5425801BTT-75B |
256M SSTL_2 interface DDR SDRAM 143 MHz/133 MHz/125 MHz/100 MHz 4-Mword � 16-bit � 4-bank/8-Mword � 8-bit � 4-bank/ 16-Mword � 4-bit � 4-bank |
Elpida Memory |
| 152 |
HY57V658010 |
8Mx8 bit Synchronous DRAM Series |
Hynix Semiconductor |
| 153 |
HY57V658010TC-10 |
4Mbit x 2bank x 8 SDRAM, LVTTL, 100ns |
Hynix Semiconductor |
| 154 |
HY57V658010TC-12 |
4Mbit x 2bank x 8 SDRAM, LVTTL, 120ns |
Hynix Semiconductor |
| 155 |
HY57V658010TC-15 |
4Mbit x 2bank x 8 SDRAM, LVTTL, 150ns |
Hynix Semiconductor |
| 156 |
HY57V658011 |
8Mx8 bit Synchronous DRAM Series |
Hynix Semiconductor |
| 157 |
HY57V658011TC-10 |
4Mbit x 2bank x 8 SDRAM, SSTL, 100ns |
Hynix Semiconductor |
| 158 |
HY57V658011TC-7 |
4Mbit x 2bank x 8 SDRAM, SSTL, 70ns |
Hynix Semiconductor |
| 159 |
HY57V658011TC-8 |
4Mbit x 2bank x 8 SDRAM, SSTL, 80ns |
Hynix Semiconductor |
| 160 |
IDT5962-9225801MXA |
16-Bit Bi-Directional Transceiver |
IDT |
| 161 |
IRF5801 |
200V Single N-Channel HEXFET Power MOSFET in a TSOP-6 (Micro 6) package |
International Rectifier |
| 162 |
IRF5801PBF-1 |
200V Single N-Channel HEXFET Power MOSFET in a TSOP-6 (Micro 6) package |
International Rectifier |
| 163 |
IRF5801TR |
200V Single N-Channel HEXFET Power MOSFET in a TSOP-6 (Micro 6) package |
International Rectifier |
| 164 |
IRF5801TRPBF |
200V Single N-Channel HEXFET Power MOSFET in a TSOP-6 (Micro 6) package |
International Rectifier |
| 165 |
IRF5801TRPBF-1 |
200V Single N-Channel HEXFET Power MOSFET in a TSOP-6 (Micro 6) package |
International Rectifier |
| 166 |
JANHCE1N58011 |
6 AMPS FAST RECOVERY RECTIFIER CHIP 50 - 150 VOLTS |
Microsemi |
| 167 |
JANKCE1N58011 |
6 AMPS FAST RECOVERY RECTIFIER CHIP 50 - 150 VOLTS |
Microsemi |
| 168 |
KS58015 |
DTMF DIALER FOR BINARY DATA-IN |
Samsung Electronic |
| 169 |
KS58015D |
DTMF DIALER FOR BINARY DATA-IN |
Samsung Electronic |
| 170 |
KS58015N |
DTMF DIALER FOR BINARY DATA-IN |
Samsung Electronic |
| 171 |
KSC5801 |
High Voltage Color Display Horizontal Deflection Output (Damper Diode Built In) |
Fairchild Semiconductor |
| 172 |
MAX5801 |
Ultra-Small, Dual-Channel, 8-/10-/12-Bit Buffered Output DACs with Internal Reference and I²C Interface |
MAXIM - Dallas Semiconductor |
| 173 |
MAX5801ATB+ |
Ultra-Small, Dual-Channel, 8-/10-/12-Bit Buffered Output DACs with Internal Reference and I²C Interface |
MAXIM - Dallas Semiconductor |
| 174 |
MAX5801ATB+T |
Ultra-Small, Dual-Channel, 8-/10-/12-Bit Buffered Output DACs with Internal Reference and I²C Interface |
MAXIM - Dallas Semiconductor |
| 175 |
MAX5801AUB+ |
Ultra-Small, Dual-Channel, 8-/10-/12-Bit Buffered Output DACs with Internal Reference and I²C Interface |
MAXIM - Dallas Semiconductor |
| 176 |
MAX5X02EVKIT |
Evaluation Kit for the MAX5700, MAX5701, MAX5702A/B, MAX5800, MAX5801, and MAX5802A/B |
MAXIM - Dallas Semiconductor |
| 177 |
MAX5X02EVKIT# |
Evaluation Kit for the MAX5700, MAX5701, MAX5702A/B, MAX5800, MAX5801, and MAX5802A/B |
MAXIM - Dallas Semiconductor |
| 178 |
MCH5801 |
THIN-FILM CHIP Inductor designed for use in UHF and microwave hybrid circuits for tuning and biasing applications |
Motorola |
| 179 |
MCH5801 |
DC / DC Converter Applications |
SANYO |
| 180 |
MIC5800/5801 |
4/8-Bit Parallel-Input Latched Drivers |
Micrel Semiconductor |
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