| No. |
Part Name |
Description |
Manufacturer |
| 151 |
NX8570SC569-CA |
CW InGaAsP MQW-DFB laser diode module with wavelength monitor for DWDM applications (20 mW min). ITU-T wavelength 1556.959 nm. Frequency 192.55 THz. SC-PC connector. |
NEC |
| 152 |
NX8571SC569-BA |
CW InGaAsP MQW-DFB laser diode module with wavelength monitor for DWDM applications (10 mW min). ITU-T wavelength 1556.959 nm. Frequency 192.55 THz. FC-PC connector. |
NEC |
| 153 |
NX8571SC569-CA |
CW InGaAsP MQW-DFB laser diode module with wavelength monitor for DWDM applications (10 mW min). ITU-T wavelength 1556.959 nm. Frequency 192.55 THz. SC-PC connector. |
NEC |
| 154 |
PB-IRF6622 |
Leaded A 25V Single N-Channel HEXFET Power MOSFET in a DirectFET SQ package rated at 59 amperes. |
International Rectifier |
| 155 |
PB-IRF6633 |
Leaded A 20V Single N-Channel HEXFET Power MOSFET in a DirectFET MP package++rated at 59 amperes. |
International Rectifier |
| 156 |
PG16032-B-P2 |
160x32dots; Dot size:0.55 x 0.55mm; dot pitch:0.59 x 0.59mm; LCD monitor |
Powertip Technology |
| 157 |
PTRA094808NF-V1 |
High Power RF LDMOS FET 480W, 48V, 859 - 960 MHz |
Wolfspeed |
| 158 |
S3P7559 |
S3C7559/S3P7559 Data Sheet |
Samsung Electronic |
| 159 |
S3P7559 |
S3C7559/S3P7559 User's Manual |
Samsung Electronic |
| 160 |
SMBJ130CA |
Surface mount transient voltage suppressor. Breakdown voltage 144 V (min), 159 V (max). Test current 1.0 mA. Bidirectional. |
Jinan Gude Electronic Device |
| 161 |
STF8NM60ND |
N-channel 600 V, 0.59 Ω, 7 A, FDmesh͐2;2; II Power MOSFET TO-220, TO-220FP, IPAK, DPAK |
ST Microelectronics |
| 162 |
STL65DN3LLH5 |
Dual N-channel 30 V, 0.0059 Ohm, 19 A, PowerFLAT(TM)(5x6) double island, STripFET (TM) V Power MOSFET |
ST Microelectronics |
| 163 |
STP8NM60ND |
N-channel 600 V, 0.59 Ohm, 7 A, FDmesh(TM) II Power MOSFET (with fast diode) TO-220 |
ST Microelectronics |
| 164 |
STP90N6F6 |
N-channel 60 V, 0.0059 Ohm typ., 84 A STripFET(TM) VI DeepGATE(TM) Power MOSFET in a TO-220 package |
ST Microelectronics |
| 165 |
TC59 |
The TC59 is a low dropout, negative output voltage regulator designed specifically for battery-operated systems. Its full CMOS construction eliminates the wasted ground current typical of bipolar LDOs. This reduced supply current significa |
Microchip |
| 166 |
TO-59 |
JEDEC TO59 OUTLINE |
Transitron Electronic |
| 167 |
TPS2559 |
TPS2559 2.5-6.5V, 5.5A, 13m? Current Limited Power Distribution Switch 10-VSON -40 to 85 |
Texas Instruments |
| 168 |
TPS2559DRCR |
TPS2559 2.5-6.5V, 5.5A, 13m? Current Limited Power Distribution Switch 10-VSON -40 to 85 |
Texas Instruments |
| 169 |
TPS2559DRCT |
TPS2559 2.5-6.5V, 5.5A, 13m? Current Limited Power Distribution Switch 10-VSON -40 to 85 |
Texas Instruments |
| 170 |
U259A |
259 Pin Ceramic Pin Grid Array |
National Semiconductor |
| 171 |
UP159A |
159 Pin Molded Plastic Pin Grid Array |
National Semiconductor |
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