| No. |
Part Name |
Description |
Manufacturer |
| 151 |
IS61NLF12836-10B |
128K x 36 flow-through no wait state bus sram |
Integrated Silicon Solution Inc |
| 152 |
IS61NLF12836-10TQ |
128K x 36 flow-through no wait state bus sram |
Integrated Silicon Solution Inc |
| 153 |
IS61NLF12836-10TQI |
128K x 36 flow-through no wait state bus sram |
Integrated Silicon Solution Inc |
| 154 |
IS61NLF12836-9B |
128K x 36 flow-through no wait state bus sram |
Integrated Silicon Solution Inc |
| 155 |
IS61NLF12836-9TQ |
128K x 36 flow-through no wait state bus sram |
Integrated Silicon Solution Inc |
| 156 |
IS61NLF25636-10BI |
256K x 36 flow-through no wait state bus sram |
Integrated Silicon Solution Inc |
| 157 |
IS61NLF25636-10TQ |
256K x 36 flow-through no wait state bus sram |
Integrated Silicon Solution Inc |
| 158 |
IS61NLF25636-10TQI |
256K x 36 flow-through no wait state bus sram |
Integrated Silicon Solution Inc |
| 159 |
K5P2880YCM |
Multi-Chip Package MEMORY 128M Bit 16Mx8 Nand Flash Memory / 8M Bit 1Mx8/512Kx16 Full CMOS SRAM |
Samsung Electronic |
| 160 |
K5T6432YT |
Multi-Chip Package MEMORY 64M Bit 4Mx16 Four Bank NOR Flash Memory / 32M Bit 2Mx16 UtRAM |
Samsung Electronic |
| 161 |
K6EB-110V |
K-relay. Uniquely designed relay. 6 form C. Coil voltage 110 V DC. Plug-in and solder. High sensitivity relay. Amber sealed type. |
Matsushita Electric Works(Nais) |
| 162 |
L5502-11 |
V90/K56 flex PC card device set |
Conexant |
| 163 |
LM26LV |
1.6V, LLP-6 Factory Preset Temperature Switch and Temperature Sensor |
Texas Instruments |
| 164 |
LM26LV-Q1 |
Automotive 1.6 V, LLP-6 Factory Preset Temperature Switch and Temperature Sensor |
Texas Instruments |
| 165 |
M39832 |
Single Chip 8 Mbit 1Mb x8 or 512Kb x16 Flash and 256 Kbit Parallel EEPROM Memory |
ST Microelectronics |
| 166 |
M39832-B12WNE1T |
Single Chip 8 Mbit 1Mb x8 or 512Kb x16 Flash and 256 Kbit Parallel EEPROM Memory |
ST Microelectronics |
| 167 |
M39832-B12WNE6T |
Single Chip 8 Mbit 1Mb x8 or 512Kb x16 Flash and 256 Kbit Parallel EEPROM Memory |
ST Microelectronics |
| 168 |
M39832-B15WNE1T |
Single Chip 8 Mbit 1Mb x8 or 512Kb x16 Flash and 256 Kbit Parallel EEPROM Memory |
ST Microelectronics |
| 169 |
M39832-B15WNE6T |
Single Chip 8 Mbit 1Mb x8 or 512Kb x16 Flash and 256 Kbit Parallel EEPROM Memory |
ST Microelectronics |
| 170 |
M39832-T12WNE1T |
Single Chip 8 Mbit 1Mb x8 or 512Kb x16 Flash and 256 Kbit Parallel EEPROM Memory |
ST Microelectronics |
| 171 |
M39832-T12WNE6T |
Single Chip 8 Mbit 1Mb x8 or 512Kb x16 Flash and 256 Kbit Parallel EEPROM Memory |
ST Microelectronics |
| 172 |
M39832-T15WNE1T |
Single Chip 8 Mbit 1Mb x8 or 512Kb x16 Flash and 256 Kbit Parallel EEPROM Memory |
ST Microelectronics |
| 173 |
M39832-T15WNE6T |
Single Chip 8 Mbit 1Mb x8 or 512Kb x16 Flash and 256 Kbit Parallel EEPROM Memory |
ST Microelectronics |
| 174 |
M39832NE |
Single Chip 8 Mbit 1Mb x8 or 512Kb x16 Flash and 256 Kbit Parallel EEPROM Memory |
ST Microelectronics |
| 175 |
MACH220-14JI |
High-density EE CMOS programmable logic, 96 macrocells, 48 outputs, 56 inputs with pull-up resistors, 96 flip-flops; 4 clock choices, 14ns |
Lattice Semiconductor |
| 176 |
MACH220-18JI |
High-density EE CMOS programmable logic, 96 macrocells, 48 outputs, 56 inputs with pull-up resistors, 96 flip-flops; 4 clock choices, 18ns |
Lattice Semiconductor |
| 177 |
MACH220-24JI |
High-density EE CMOS programmable logic, 96 macrocells, 48 outputs, 56 inputs with pull-up resistors, 96 flip-flops; 4 clock choices, 24ns |
Lattice Semiconductor |
| 178 |
MAXGTPREFDES |
Spartan-6 FPGA GTP Transceiver Power Module |
MAXIM - Dallas Semiconductor |
| 179 |
MAXGTPREFDES# |
Spartan-6 FPGA GTP Transceiver Power Module |
MAXIM - Dallas Semiconductor |
| 180 |
MAXGTXREFDES |
Virtex-6 FPGA GTX Transceiver Power Module |
MAXIM - Dallas Semiconductor |
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