| No. |
Part Name |
Description |
Manufacturer |
| 151 |
K4E160411D-B |
4M x 4 bit CMOS dynamic RAM with extended data out. Supply voltage 5V, 2K refresh cycle. |
Samsung Electronic |
| 152 |
K4E160411D-F |
4M x 4 bit CMOS dynamic RAM with extended data out. Supply voltage 5V, 2K refresh cycle. |
Samsung Electronic |
| 153 |
K4E160412D |
4M x 4Bit CMOS Dynamic RAM with Extended Data Out |
Samsung Electronic |
| 154 |
K4E160412D-B |
4M x 4 bit CMOS dynamic RAM with extended data out. Supply voltage 3.3V, 2K refresh cycle. |
Samsung Electronic |
| 155 |
K4E160412D-F |
4M x 4 bit CMOS dynamic RAM with extended data out. Supply voltage 3.3V, 2K refresh cycle. |
Samsung Electronic |
| 156 |
K4E660411D, K4E640411D |
16MB x 4bit CMOS Dynamic RAM with Extended Data Out Data Sheet |
Samsung Electronic |
| 157 |
K4E660412D |
16M x 4bit CMOS Dynamic RAM with Extended Data Out |
Samsung Electronic |
| 158 |
K4E660412D, K4E640412D |
16MB x 4bit CMOS Dynamic RAM with Extended Data Out Data Sheet |
Samsung Electronic |
| 159 |
K4E660412D, K4E640412D |
16MB x 4bit CMOS Dynamic RAM with Extended Data Out Data Sheet |
Samsung Electronic |
| 160 |
K4E660412D-JC_L |
16M x 4 bit CMOS dynamic RAM with extended data out. 3.3V, 8K refresh cycle. |
Samsung Electronic |
| 161 |
K4E660412D-TC_L |
16M x 4 bit CMOS dynamic RAM with extended data out. 3.3V, 8K refresh cycle. |
Samsung Electronic |
| 162 |
K4E660412E, K4E640412E |
16M x 4bit CMOS Dynamic RAM with Extended Data Out Data Sheet |
Samsung Electronic |
| 163 |
K4E660412E, K4E640412E |
16M x 4bit CMOS Dynamic RAM with Extended Data Out Data Sheet |
Samsung Electronic |
| 164 |
K4F160411C-B50 |
4M x 4bit CMOS dynamic RAM with fast page mode, 5V, 50ns |
Samsung Electronic |
| 165 |
K4F160411C-B60 |
4M x 4bit CMOS dynamic RAM with fast page mode, 5V, 60ns |
Samsung Electronic |
| 166 |
K4F160411C-F50 |
4M x 4bit CMOS dynamic RAM with fast page mode, 5V, 50ns |
Samsung Electronic |
| 167 |
K4F160411C-F60 |
4M x 4bit CMOS dynamic RAM with fast page mode, 5V, 60ns |
Samsung Electronic |
| 168 |
K4F160411D |
4M x 4Bit CMOS Dynamic RAM with Fast Page Mode |
Samsung Electronic |
| 169 |
K4F160411D-B |
4M x 4 bit CMOS dynamic RAM with fast page mode. Supply voltage 5V, 2K refresh cycle. |
Samsung Electronic |
| 170 |
K4F160411D-F |
4M x 4 bit CMOS dynamic RAM with fast page mode. Supply voltage 5V, 2K refresh cycle. |
Samsung Electronic |
| 171 |
K4F160412C-B50 |
4M x 4bit CMOS dynamic RAM with fast page mode, 3.3V, 50ns |
Samsung Electronic |
| 172 |
K4F160412C-B60 |
4M x 4bit CMOS dynamic RAM with fast page mode, 3.3V, 60ns |
Samsung Electronic |
| 173 |
K4F160412C-F50 |
4M x 4bit CMOS dynamic RAM with fast page mode, 3.3V, 50ns |
Samsung Electronic |
| 174 |
K4F160412C-F60 |
4M x 4bit CMOS dynamic RAM with fast page mode, 3.3V, 60ns |
Samsung Electronic |
| 175 |
K4F160412D |
4M x 4Bit CMOS Dynamic RAM with Fast Page Mode |
Samsung Electronic |
| 176 |
K4F160412D-B |
4M x 4 bit CMOS dynamic RAM with fast page mode. Supply voltage 3.3V, 2K refresh cycle. |
Samsung Electronic |
| 177 |
K4F160412D-F |
4M x 4 bit CMOS dynamic RAM with fast page mode. Supply voltage 3.3V, 2K refresh cycle. |
Samsung Electronic |
| 178 |
K4F660411D, K4F640411D |
16M x 4bit CMOS Dynamic RAM with Fast Page Mode Data Sheet |
Samsung Electronic |
| 179 |
K4F660412D |
16M x 4bit CMOS Dynamic RAM with Fast Page Mode |
Samsung Electronic |
| 180 |
K4F660412D, K4F640412D |
16M x 4bit CMOS Dynamic RAM with Fast Page Mode Data Sheet |
Samsung Electronic |
| | | |
