| No. |
Part Name |
Description |
Manufacturer |
| 151 |
5962P9960703TXA |
512K x 8 SRAM: SMD. 20ns access time, 3.3V operation. Class T. Lead finish hot solder dipped. Total dose 3E4(30krad)(Si) |
Aeroflex Circuit Technology |
| 152 |
5962P9960703TXC |
512K x 8 SRAM: SMD. 20ns access time, 3.3V operation. Class T. Lead finish gold. Total dose 3E4(30krad)(Si) |
Aeroflex Circuit Technology |
| 153 |
5962P9960703TXX |
512K x 8 SRAM: SMD. 20ns access time, 3.3V operation. Class T. Lead finish factory option. Total dose 3E4(30krad)(Si) |
Aeroflex Circuit Technology |
| 154 |
5962P9960704QUA |
512K x 8 SRAM: SMD. 20ns access time, 3.3V operation. Class Q. Lead finish hot solder dipped. Total dose 3E4(30krad)(Si) |
Aeroflex Circuit Technology |
| 155 |
5962P9960704QUC |
512K x 8 SRAM: SMD. 20ns access time, 3.3V operation. Class Q. Lead finish gold. Total dose 3E4(30krad)(Si) |
Aeroflex Circuit Technology |
| 156 |
5962P9960704QUX |
512K x 8 SRAM: SMD. 20ns access time, 3.3V operation. Class Q. Lead finish factory option. Total dose 3E4(30krad)(Si) |
Aeroflex Circuit Technology |
| 157 |
5962P9960704QXA |
512K x 8 SRAM: SMD. 20ns access time, 3.3V operation. Class Q. Lead finish hot solder dipped. Total dose 3E4(30krad)(Si) |
Aeroflex Circuit Technology |
| 158 |
5962P9960704QXC |
512K x 8 SRAM: SMD. 20ns access time, 3.3V operation. Class Q. Lead finish gold. Total dose 3E4(30krad)(Si) |
Aeroflex Circuit Technology |
| 159 |
5962P9960704QXX |
512K x 8 SRAM: SMD. 20ns access time, 3.3V operation. Class Q. Lead finish factory option. Total dose 3E4(30krad)(Si) |
Aeroflex Circuit Technology |
| 160 |
5962P9960704TUA |
512K x 8 SRAM: SMD. 20ns access time, 3.3V operation. Class T. Lead finish hot solder dipped. Total dose 3E4(30krad)(Si) |
Aeroflex Circuit Technology |
| 161 |
5962P9960704TUC |
512K x 8 SRAM: SMD. 20ns access time, 3.3V operation. Class T. Lead finish gold. Total dose 3E4(30krad)(Si) |
Aeroflex Circuit Technology |
| 162 |
5962P9960704TUX |
512K x 8 SRAM: SMD. 20ns access time, 3.3V operation. Class T. Lead finish factory option. Total dose 3E4(30krad)(Si) |
Aeroflex Circuit Technology |
| 163 |
5962P9960704TXA |
512K x 8 SRAM: SMD. 20ns access time, 3.3V operation. Class T. Lead finish hot solder dipped. Total dose 3E4(30krad)(Si) |
Aeroflex Circuit Technology |
| 164 |
5962P9960704TXC |
512K x 8 SRAM: SMD. 20ns access time, 3.3V operation. Class T. Lead finish gold. Total dose 3E4(30krad)(Si) |
Aeroflex Circuit Technology |
| 165 |
5962P9960704TXX |
512K x 8 SRAM: SMD. 20ns access time, 3.3V operation. Class T. Lead finish factory option. Total dose 3E4(30krad)(Si) |
Aeroflex Circuit Technology |
| 166 |
APT6070AN |
V(dss): 600V; 10.5A; 0.7 Ohm; N-channel enhancement mode high voltage power MOSFET |
Advanced Power Technology |
| 167 |
APT6070BNR |
V(dss): 600V; 12.0A; 0.70 Ohm; N-channel enhancement mode high voltage power MOSFET |
Advanced Power Technology |
| 168 |
DB96070W |
RF POWER AMPLIFIER USING 2 X PD57045S THE LDMOST FAMILY |
SGS Thomson Microelectronics |
| 169 |
DMC6070LFDH |
COMPLEMENTARY PAIR ENHANCEMENT MODE MOSFET |
Diodes |
| 170 |
DMC6070LFDH-7 |
COMPLEMENTARY PAIR ENHANCEMENT MODE MOSFET |
Diodes |
| 171 |
DMN6070SFCL |
60V N-CHANNEL ENHANCEMENT MODE MOSFET |
Diodes |
| 172 |
DMN6070SFCL-7 |
60V N-CHANNEL ENHANCEMENT MODE MOSFET |
Diodes |
| 173 |
DMN6070SSD |
60V DUAL N-CHANNEL ENHANCEMENT MODE MOSFET |
Diodes |
| 174 |
DMN6070SSD-13 |
60V DUAL N-CHANNEL ENHANCEMENT MODE MOSFET |
Diodes |
| 175 |
DXTN26070CY |
70V NPN POWER SWITCHING TRANSISTOR IN SOT89 |
Diodes |
| 176 |
FS6070-01 |
1:4 HSTL to LVTTL fanout buffer IC |
AMI Semiconductor |
| 177 |
JAN1N6070A |
Transient Voltage Suppressor |
Microsemi |
| 178 |
JANTX1N6070A |
Transient Voltage Suppressor |
Microsemi |
| 179 |
JANTXV1N6070A |
Transient Voltage Suppressor |
Microsemi |
| 180 |
LA76070 |
NTSC Color Television IC |
SANYO |
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