No. |
Part Name |
Description |
Manufacturer |
151 |
5962P9960703QXA |
512K x 8 SRAM: SMD. 20ns access time, 3.3V operation. Class Q. Lead finish hot solder dipped. Total dose 3E4(30krad)(Si) |
Aeroflex Circuit Technology |
152 |
5962P9960703QXC |
512K x 8 SRAM: SMD. 20ns access time, 3.3V operation. Class Q. Lead finish gold. Total dose 3E4(30krad)(Si) |
Aeroflex Circuit Technology |
153 |
5962P9960703QXX |
512K x 8 SRAM: SMD. 20ns access time, 3.3V operation. Class Q. Lead finish factory option. Total dose 3E4(30krad)(Si) |
Aeroflex Circuit Technology |
154 |
5962P9960703TUA |
512K x 8 SRAM: SMD. 20ns access time, 3.3V operation. Class T. Lead finish hot solder dipped. Total dose 3E4(30krad)(Si) |
Aeroflex Circuit Technology |
155 |
5962P9960703TUC |
512K x 8 SRAM: SMD. 20ns access time, 3.3V operation. Class T. Lead finish gold. Total dose 3E4(30krad)(Si) |
Aeroflex Circuit Technology |
156 |
5962P9960703TUX |
512K x 8 SRAM: SMD. 20ns access time, 3.3V operation. Class T. Lead finish factory option. Total dose 3E4(30krad)(Si) |
Aeroflex Circuit Technology |
157 |
5962P9960703TXA |
512K x 8 SRAM: SMD. 20ns access time, 3.3V operation. Class T. Lead finish hot solder dipped. Total dose 3E4(30krad)(Si) |
Aeroflex Circuit Technology |
158 |
5962P9960703TXC |
512K x 8 SRAM: SMD. 20ns access time, 3.3V operation. Class T. Lead finish gold. Total dose 3E4(30krad)(Si) |
Aeroflex Circuit Technology |
159 |
5962P9960703TXX |
512K x 8 SRAM: SMD. 20ns access time, 3.3V operation. Class T. Lead finish factory option. Total dose 3E4(30krad)(Si) |
Aeroflex Circuit Technology |
160 |
5962P9960704QUA |
512K x 8 SRAM: SMD. 20ns access time, 3.3V operation. Class Q. Lead finish hot solder dipped. Total dose 3E4(30krad)(Si) |
Aeroflex Circuit Technology |
161 |
5962P9960704QUC |
512K x 8 SRAM: SMD. 20ns access time, 3.3V operation. Class Q. Lead finish gold. Total dose 3E4(30krad)(Si) |
Aeroflex Circuit Technology |
162 |
5962P9960704QUX |
512K x 8 SRAM: SMD. 20ns access time, 3.3V operation. Class Q. Lead finish factory option. Total dose 3E4(30krad)(Si) |
Aeroflex Circuit Technology |
163 |
5962P9960704QXA |
512K x 8 SRAM: SMD. 20ns access time, 3.3V operation. Class Q. Lead finish hot solder dipped. Total dose 3E4(30krad)(Si) |
Aeroflex Circuit Technology |
164 |
5962P9960704QXC |
512K x 8 SRAM: SMD. 20ns access time, 3.3V operation. Class Q. Lead finish gold. Total dose 3E4(30krad)(Si) |
Aeroflex Circuit Technology |
165 |
5962P9960704QXX |
512K x 8 SRAM: SMD. 20ns access time, 3.3V operation. Class Q. Lead finish factory option. Total dose 3E4(30krad)(Si) |
Aeroflex Circuit Technology |
166 |
5962P9960704TUA |
512K x 8 SRAM: SMD. 20ns access time, 3.3V operation. Class T. Lead finish hot solder dipped. Total dose 3E4(30krad)(Si) |
Aeroflex Circuit Technology |
167 |
5962P9960704TUC |
512K x 8 SRAM: SMD. 20ns access time, 3.3V operation. Class T. Lead finish gold. Total dose 3E4(30krad)(Si) |
Aeroflex Circuit Technology |
168 |
5962P9960704TUX |
512K x 8 SRAM: SMD. 20ns access time, 3.3V operation. Class T. Lead finish factory option. Total dose 3E4(30krad)(Si) |
Aeroflex Circuit Technology |
169 |
5962P9960704TXA |
512K x 8 SRAM: SMD. 20ns access time, 3.3V operation. Class T. Lead finish hot solder dipped. Total dose 3E4(30krad)(Si) |
Aeroflex Circuit Technology |
170 |
5962P9960704TXC |
512K x 8 SRAM: SMD. 20ns access time, 3.3V operation. Class T. Lead finish gold. Total dose 3E4(30krad)(Si) |
Aeroflex Circuit Technology |
171 |
5962P9960704TXX |
512K x 8 SRAM: SMD. 20ns access time, 3.3V operation. Class T. Lead finish factory option. Total dose 3E4(30krad)(Si) |
Aeroflex Circuit Technology |
172 |
74162PC |
Synchronous decade counter with synchronous clear |
TUNGSRAM |
173 |
AD9862PCB |
Mixed-Signal Front-End (MxFE��) Processor for Broadband Communications |
Analog Devices |
174 |
ADS62P15 |
Dual Channel 11-Bits, 125 MSPS ADC With Parallel CMOS/DDR LVDS Outputs |
Texas Instruments |
175 |
ADS62P15IRGCR |
Dual Channel 11-Bits, 125 MSPS ADC With Parallel CMOS/DDR LVDS Outputs 64-VQFN -40 to 85 |
Texas Instruments |
176 |
ADS62P15IRGCT |
Dual Channel 11-Bits, 125 MSPS ADC With Parallel CMOS/DDR LVDS Outputs 64-VQFN -40 to 85 |
Texas Instruments |
177 |
ADS62P19 |
Dual Channel 11-Bit, 250 MSPS ADC With DDR LVDS and Parallel CMOS Output |
Texas Instruments |
178 |
ADS62P19IRGCR |
Dual Channel 11-Bit, 250 MSPS ADC With DDR LVDS and Parallel CMOS Output 64-VQFN -40 to 85 |
Texas Instruments |
179 |
ADS62P19IRGCT |
Dual Channel 11-Bit, 250 MSPS ADC With DDR LVDS and Parallel CMOS Output 64-VQFN -40 to 85 |
Texas Instruments |
180 |
ADS62P22 |
Dual 12-bit 65MSPS ADC with selectable DDR LVDS or CMOS outputs |
Texas Instruments |
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