No. |
Part Name |
Description |
Manufacturer |
151 |
K4M64163PH-RG |
1M x 16Bit x 4 Banks Mobile SDRAM in 54CSP |
Samsung Electronic |
152 |
K4S51163PF-F1L |
8M x 16Bit x 4 Banks Mobile-SDRAM |
Samsung Electronic |
153 |
K4S51163PF-F90 |
8M x 16Bit x 4 Banks Mobile-SDRAM |
Samsung Electronic |
154 |
K4S51163PF-Y |
8M x 16Bit x 4 Banks Mobile-SDRAM |
Samsung Electronic |
155 |
K4S51163PF-YF |
8M x 16Bit x 4 Banks Mobile-SDRAM |
Samsung Electronic |
156 |
K4S56163PF |
4M x 16Bit x 4 Banks Mobile SDRAM in 54FBGA |
Samsung Electronic |
157 |
K4S56163PF-F1L |
4M x 16Bit x 4 Banks Mobile SDRAM in 54FBGA |
Samsung Electronic |
158 |
K4S56163PF-F90 |
4M x 16Bit x 4 Banks Mobile SDRAM in 54FBGA |
Samsung Electronic |
159 |
K4S56163PF-RG |
4M x 16Bit x 4 Banks Mobile SDRAM in 54FBGA |
Samsung Electronic |
160 |
K4S56163PF-RG/F1L |
4M x 16Bit x 4 Banks Mobile SDRAM in 54FBGA |
Samsung Electronic |
161 |
K4S56163PF-RG/F75 |
4M x 16Bit x 4 Banks Mobile SDRAM in 54FBGA |
Samsung Electronic |
162 |
K4S56163PF-RG/F90 |
4M x 16Bit x 4 Banks Mobile SDRAM in 54FBGA |
Samsung Electronic |
163 |
K4X56163PE |
16M x16 Mobile DDR SDRAM |
Samsung Electronic |
164 |
K4X56163PE-LFG |
16M x16 Mobile DDR SDRAM |
Samsung Electronic |
165 |
K4X56163PE-LG |
16M x16 Mobile DDR SDRAM |
Samsung Electronic |
166 |
M54563P |
8-UNIT 500mA SOURCE TYPE DARLINGTON TRANSISTOR ARRAY WITH CLAMP DIODE |
Mitsubishi Electric Corporation |
167 |
M54563P/FP |
Transistor Array |
Mitsubishi Electric Corporation |
168 |
MAX6363P |
SOT23, Low-Power Microprocessor Supervisory Circuits with Battery Backup |
MAXIM - Dallas Semiconductor |
169 |
MAX6363PUT |
SOT23, Low-Power ��P Supervisory Circuits with Battery Backup |
MAXIM - Dallas Semiconductor |
170 |
MAX6363PUT23 |
SOT23, Low-Power ��P Supervisory Circuits with Battery Backup |
MAXIM - Dallas Semiconductor |
171 |
MAX6363PUT23+ |
SOT23, Low-Power Microprocessor Supervisory Circuits with Battery Backup |
MAXIM - Dallas Semiconductor |
172 |
MAX6363PUT23+T |
SOT23, Low-Power Microprocessor Supervisory Circuits with Battery Backup |
MAXIM - Dallas Semiconductor |
173 |
MAX6363PUT23-T |
2.38 V, SOT23, low-power, mP supervisory circuit with battery backup |
MAXIM - Dallas Semiconductor |
174 |
MAX6363PUT26 |
SOT23, Low-Power ��P Supervisory Circuits with Battery Backup |
MAXIM - Dallas Semiconductor |
175 |
MAX6363PUT26+ |
SOT23, Low-Power Microprocessor Supervisory Circuits with Battery Backup |
MAXIM - Dallas Semiconductor |
176 |
MAX6363PUT26+T |
SOT23, Low-Power Microprocessor Supervisory Circuits with Battery Backup |
MAXIM - Dallas Semiconductor |
177 |
MAX6363PUT26-T |
2.70 V, SOT23, low-power, mP supervisory circuit with battery backup |
MAXIM - Dallas Semiconductor |
178 |
MAX6363PUT29 |
SOT23, Low-Power ��P Supervisory Circuits with Battery Backup |
MAXIM - Dallas Semiconductor |
179 |
MAX6363PUT29+ |
SOT23, Low-Power Microprocessor Supervisory Circuits with Battery Backup |
MAXIM - Dallas Semiconductor |
180 |
MAX6363PUT29+T |
SOT23, Low-Power Microprocessor Supervisory Circuits with Battery Backup |
MAXIM - Dallas Semiconductor |
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