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Datasheets for 69B

Datasheets found :: 353
Page: | 2 | 3 | 4 | 5 | 6 | 7 | 8 | 9 | 10 |
No. Part Name Description Manufacturer
151 JANTX1N969B-1 Zener Voltage Regulator Diode Microsemi
152 JANTX1N969B-1 Zener Voltage Regulator Diode Microsemi
153 JANTX1N969BUR-1 Zener Voltage Regulator Diode Microsemi
154 JANTX1N969BUR-1 Zener Voltage Regulator Diode Microsemi
155 JANTXV1N969B Zener Voltage Regulator Diode Microsemi
156 JANTXV1N969B-1 Zener Voltage Regulator Diode Microsemi
157 JANTXV1N969B-1 Zener Voltage Regulator Diode Microsemi
158 JANTXV1N969BUR-1 Zener Voltage Regulator Diode Microsemi
159 JANTXV1N969BUR-1 Zener Voltage Regulator Diode Microsemi
160 K4R271669B Direct RDRAM Samsung Electronic
161 K4R271669B Direct RDRAM� Data Sheet Samsung Electronic
162 K4R271669B-MCG6 256K x 16 x 32s banks direct RDRAM. Access time: 53.3 ns, I/O freq.: 600 MHz. Samsung Electronic
163 K4R271669B-MCK7 256K x 16 x 32s banks direct RDRAM. Access time: 45 ns, I/O freq.: 711 MHz. Samsung Electronic
164 K4R271669B-MCK8 256K x 16 x 32s banks direct RDRAM. Access time: 45 ns, I/O freq.: 800 MHz. Samsung Electronic
165 K4R271669B-N(M)CG6 256K x 16/18 bit x 32s banks Direct RDRAMTM Samsung Electronic
166 K4R271669B-N(M)CK7 256K x 16/18 bit x 32s banks Direct RDRAMTM Samsung Electronic
167 K4R271669B-NB(M)CCK8 256K x 16/18 bit x 32s banks Direct RDRAMTM Samsung Electronic
168 K4R271669B-NCG6 256K x 16 x 32s banks direct RDRAM. Access time: 53.3 ns, I/O freq.: 600 MHz. Samsung Electronic
169 K4R271669B-NCK7 256K x 16 x 32s banks direct RDRAM. Access time: 45 ns, I/O freq.: 711 MHz Samsung Electronic
170 K4R271669B-NCK8 256K x 16 x 32s banks direct RDRAM. Access time: 45 ns, I/O freq.: 800 MHz Samsung Electronic
171 K4R271869B-MCG6 256K x 18 x 32s banks direct RDRAM. Access time: 53.3 ns, I/O freq.: 600 MHz. Samsung Electronic
172 K4R271869B-MCK7 256K x 18 x 32s banks direct RDRAM. Access time: 45 ns, I/O freq.: 711 MHz. Samsung Electronic
173 K4R271869B-MCK8 256K x 18 x 32s banks direct RDRAM. Access time: 45 ns, I/O freq.: 800 MHz. Samsung Electronic
174 K4R271869B-NCG6 256K x 18 x 32s banks direct RDRAM. Access time: 53.3 ns, I/O freq.: 600 MHz. Samsung Electronic
175 K4R271869B-NCK7 256K x 18 x 32s banks direct RDRAM. Access time: 45 ns, I/O freq.: 711 MHz. Samsung Electronic
176 K4R271869B-NCK8 256K x 18 x 32s banks direct RDRAM. Access time: 45 ns, I/O freq.: 800 MHz. Samsung Electronic
177 K4R441869B Direct RDRAM Samsung Electronic
178 K4R441869B K4R271669B:Direct RDRAM� Data Sheet Samsung Electronic
179 K4R441869B K4R271669B:Direct RDRAM� Data Sheet Samsung Electronic
180 K4R441869B-N(M)CG6 256K x 16/18 bit x 32s banks Direct RDRAMTM Samsung Electronic


Datasheets found :: 353
Page: | 2 | 3 | 4 | 5 | 6 | 7 | 8 | 9 | 10 |



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