No. |
Part Name |
Description |
Manufacturer |
151 |
GS882Z36AB-150 |
150MHz 7.5ns 256K x 36 9Mb pipelined and flow through synchronous NBT SRAM |
GSI Technology |
152 |
GS882Z36AB-150I |
150MHz 7.5ns 256K x 36 9Mb pipelined and flow through synchronous NBT SRAM |
GSI Technology |
153 |
GS882Z36AB-166 |
166MHz 7ns 256K x 36 9Mb pipelined and flow through synchronous NBT SRAM |
GSI Technology |
154 |
GS882Z36AB-166I |
166MHz 7ns 256K x 36 9Mb pipelined and flow through synchronous NBT SRAM |
GSI Technology |
155 |
GS882Z36AB-200 |
200MHz 6.5ns 256K x 36 9Mb pipelined and flow through synchronous NBT SRAM |
GSI Technology |
156 |
GS882Z36AB-200I |
200MHz 6.5ns 256K x 36 9Mb pipelined and flow through synchronous NBT SRAM |
GSI Technology |
157 |
GS882Z36AB-225 |
225MHz 6ns 256K x 36 9Mb pipelined and flow through synchronous NBT SRAM |
GSI Technology |
158 |
GS882Z36AB-225I |
225MHz 6ns 256K x 36 9Mb pipelined and flow through synchronous NBT SRAM |
GSI Technology |
159 |
GS882Z36AB-250 |
250MHz 5.5ns 256K x 36 9Mb pipelined and flow through synchronous NBT SRAM |
GSI Technology |
160 |
GS882Z36AB-250I |
250MHz 5.5ns 256K x 36 9Mb pipelined and flow through synchronous NBT SRAM |
GSI Technology |
161 |
HIP4086AB |
80V/ 0.5A Three Phase Driver |
Intersil |
162 |
HM62G36256ABP |
Synchronous SRAMS |
Hitachi Semiconductor |
163 |
HM62G36256ABP-30 |
Memory>Fast SRAM>Late Write / High Speed Interface Synchronous SRAM |
Renesas |
164 |
HM62G36256ABP-33 |
Memory>Fast SRAM>Late Write / High Speed Interface Synchronous SRAM |
Renesas |
165 |
IRFG110 |
100V Quad N-Channel MOSFET in a MO-036AB package |
International Rectifier |
166 |
IRFG110(N) |
100V Single N-Channel Hi-Rel MOSFET in a MO-036AB package |
International Rectifier |
167 |
IRFG5110 |
100V Dual 2N- and 2P- Channel MOSFET in a MO-036AB package |
International Rectifier |
168 |
IRFG5110(N) |
100V Single N-Channel Hi-Rel MOSFET in a MO-036AB package |
International Rectifier |
169 |
IRFG5110(P) |
-100V Single P-Channel Hi-Rel MOSFET in a MO-036AB package |
International Rectifier |
170 |
IRFG5210 |
200V Dual 2N- and 2P- Channel MOSFET in a MO-036AB package |
International Rectifier |
171 |
IRFG5210(N) |
200V Single N-Channel Hi-Rel MOSFET in a MO-036AB package |
International Rectifier |
172 |
IRFG5210(P) |
200V Single P-Channel Hi-Rel MOSFET in a MO-036AB package |
International Rectifier |
173 |
IRFG6110 |
100V Dual 2N- and 2P- Channel MOSFET in a MO-036AB package |
International Rectifier |
174 |
IRFG6110(N) |
100V Single N-Channel Hi-Rel MOSFET in a MO-036AB package |
International Rectifier |
175 |
IRFG6110(P) |
-100V Single P-Channel Hi-Rel MOSFET in a MO-036AB package |
International Rectifier |
176 |
IRFG9110 |
100V Quad P-Channel MOSFET in a MO-036AB package |
International Rectifier |
177 |
IRFG9110(P) |
-100V Single P-Channel Hi-Rel MOSFET in a MO-036AB package |
International Rectifier |
178 |
IRHG3110 |
RADIATION HARDENED POWER MOSFET THRU-HOLE (MO-036AB) |
International Rectifier |
179 |
IRHG4110 |
RADIATION HARDENED POWER MOSFET THRU-HOLE (MO-036AB) |
International Rectifier |
180 |
IRHG53110 |
100V 300kRad Hi-Rel Quad N -Channel TID Hardened MOSFET in a MO-036AB package |
International Rectifier |
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