No. |
Part Name |
Description |
Manufacturer |
151 |
FQB13N06LTM |
60V N-Channel Logic level QFET |
Fairchild Semiconductor |
152 |
FQB20N06LTM |
60V N-Channel Logic level QFET |
Fairchild Semiconductor |
153 |
FQB30N06LTM |
60V N-Channel Logic level QFET |
Fairchild Semiconductor |
154 |
FQB50N06LTM |
60V N-Channel Logic level QFET |
Fairchild Semiconductor |
155 |
FQD13N06LTF |
60V N-Channel Logic level QFET |
Fairchild Semiconductor |
156 |
FQD13N06LTM |
60V N-Channel Logic level QFET |
Fairchild Semiconductor |
157 |
FQD20N06LTF |
60V N-Channel Logic level QFET |
Fairchild Semiconductor |
158 |
FQD20N06LTM |
60V N-Channel Logic level QFET |
Fairchild Semiconductor |
159 |
FQD30N06LTF |
60V N-Channel Logic level QFET |
Fairchild Semiconductor |
160 |
FQD30N06LTM |
60V N-Channel Logic level QFET |
Fairchild Semiconductor |
161 |
FQI13N06LTU |
60V N-Channel Logic level QFET |
Fairchild Semiconductor |
162 |
FQI50N06LTU |
60V N-Channel Logic level QFET |
Fairchild Semiconductor |
163 |
FQT13N06LTF |
60V N-Channel Logic level QFET |
Fairchild Semiconductor |
164 |
FQU13N06LTU |
60V N-Channel Logic level QFET |
Fairchild Semiconductor |
165 |
FQU20N06LTU |
60V N-Channel Logic level QFET |
Fairchild Semiconductor |
166 |
FQU30N06LTU |
60V N-Channel Logic level QFET |
Fairchild Semiconductor |
167 |
HM62V256LT-10 |
32,768-word x 8-bit low voltage operation CMOS static RAM, 100ns |
Hitachi Semiconductor |
168 |
HM62V256LT-8SL |
32,768-word x 8-bit low voltage operation CMOS static RAM, 85ns |
Hitachi Semiconductor |
169 |
HM62V256LTM-10 |
32,768-word x 8-bit low voltage operation CMOS static RAM, 100ns |
Hitachi Semiconductor |
170 |
HM62V256LTM-10SL |
32,768-word x 8-bit low voltage operation CMOS static RAM, 100ns |
Hitachi Semiconductor |
171 |
HM62V256LTM-7SL |
32,768-word x 8-bit low voltage operation CMOS static RAM, 70ns |
Hitachi Semiconductor |
172 |
HM62V256LTM-8UL |
32,768-word x 8-bit low voltage operation CMOS static RAM, 85ns |
Hitachi Semiconductor |
173 |
KSB1116LTA |
PNP Epitaxial Silicon Transistor |
Fairchild Semiconductor |
174 |
LMUN2116LT1 |
Bias Resistor Transistors |
Leshan Radio Company |
175 |
LMUN2116LT3 |
Bias Resistor Transistors |
Leshan Radio Company |
176 |
LMX2336LTM |
PLLatinum Low Power Dual Frequency Synthesizer for RF Personal Communications |
National Semiconductor |
177 |
LMX2336LTMX |
PLLatinum Low Power Dual Frequency Synthesizer for RF Personal Communications |
National Semiconductor |
178 |
MAX16016LTBL+ |
Low-Power μP Supervisory Circuits with Battery-Backup Circuit and Chip-Enable Gating |
MAXIM - Dallas Semiconductor |
179 |
MAX16016LTBM+ |
Low-Power μP Supervisory Circuits with Battery-Backup Circuit and Chip-Enable Gating |
MAXIM - Dallas Semiconductor |
180 |
MAX16016LTBM+T |
Low-Power μP Supervisory Circuits with Battery-Backup Circuit and Chip-Enable Gating |
MAXIM - Dallas Semiconductor |
| | | |