| No. |
Part Name |
Description |
Manufacturer |
| 151 |
KFW2G16Q2M-DID6 |
FLASH MEMORY(54MHz) |
Samsung Electronic |
| 152 |
KFW4G16Q2M |
FLASH MEMORY(66MHz) |
Samsung Electronic |
| 153 |
KFW4G16Q2M-DEB5 |
FLASH MEMORY(54MHz) |
Samsung Electronic |
| 154 |
KFW4G16Q2M-DEB6 |
FLASH MEMORY(66MHz) |
Samsung Electronic |
| 155 |
KFW4G16Q2M-DEB6 |
FLASH MEMORY(54MHz) |
Samsung Electronic |
| 156 |
KFW4G16Q2M-DED5 |
FLASH MEMORY(54MHz) |
Samsung Electronic |
| 157 |
KFW4G16Q2M-DED6 |
FLASH MEMORY(54MHz) |
Samsung Electronic |
| 158 |
KFW4G16Q2M-DED6 |
FLASH MEMORY(66MHz) |
Samsung Electronic |
| 159 |
KFW4G16Q2M-DIB5 |
FLASH MEMORY(54MHz) |
Samsung Electronic |
| 160 |
KFW4G16Q2M-DIB6 |
FLASH MEMORY(54MHz) |
Samsung Electronic |
| 161 |
KFW4G16Q2M-DID5 |
FLASH MEMORY(54MHz) |
Samsung Electronic |
| 162 |
KFW4G16Q2M-DID6 |
FLASH MEMORY(54MHz) |
Samsung Electronic |
| 163 |
MK62486Q24 |
Very fast CMOS 32K x 9 cache BRAM, 24MHz |
SGS Thomson Microelectronics |
| 164 |
NM27C256Q200 |
256K-Bit (32K x 8) High Performance CMOS EPROM |
Fairchild Semiconductor |
| 165 |
NM27C256Q250 |
256K-Bit (32K x 8) High Performance CMOS EPROM |
Fairchild Semiconductor |
| 166 |
NMC27C256Q20 |
200 ns, Vcc=5V+/-5%, 262,144-bit (32k x 8) UV erasable CMOS PROM |
National Semiconductor |
| 167 |
NMC27C256Q200 |
200 ns, Vcc=5V+/-10%, 262,144-bit (32k x 8) UV erasable CMOS PROM |
National Semiconductor |
| 168 |
NMC27C256Q25 |
250 ns, Vcc=5V+/-5%, 262,144-bit (32k x 8) UV erasable CMOS PROM |
National Semiconductor |
| 169 |
NMC27C256Q250 |
250 ns, Vcc=5V+/-10%, 262,144-bit (32k x 8) UV erasable CMOS PROM |
National Semiconductor |
| 170 |
SF16Q2H1 |
THYRISTOR STACK |
TOSHIBA |
| 171 |
ZLNB2006Q20 |
Multiplex Controller |
Zetex Semiconductors |
| 172 |
ZNBG3116Q20 |
FET BIAS CONTROLLER WITH POLARISATION SWITCH AND TONE DETECTION |
Zetex Semiconductors |
| | | |
