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Datasheets for 700V

Datasheets found :: 1142
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No. Part Name Description Manufacturer
151 BU208A Trans GP BJT NPN 700V 8A 3-Pin(2+Tab) TO-3 Sleeve New Jersey Semiconductor
152 BU208A NPN, horizontal deflection transistor. Designed for use in televisions. Vceo = 700Vdc, Vcex = 1500Vdc, Veb = 5Vdc, Ic = 5Adc, PD = 12.5W. USHA India LTD
153 BU208D 60.000W General Purpose NPN Metal Can Transistor. 700V Vceo, 5.000A Ic, 2 hFE. Continental Device India Limited
154 BU208D NPN, horizontal deflection transistor with integrated damper diode. Vceo = 700Vdc, Vces = 1500Vdc, Veb = 5Vdc, Ic = 5Adc, PD = 60W. USHA India LTD
155 BU500 Trans GP BJT NPN 700V 8A 3-Pin(3+Tab) TO-247 Tube New Jersey Semiconductor
156 BU508A Trans GP BJT NPN 700V 8A 3-Pin(3+Tab) TO-218 New Jersey Semiconductor
157 BU508A NPN, horizontal deflection transistor. Designed for use in large screen color deflection circuits. Vceo = 700Vdc, Vces = 1500Vdc, Veb = 5Vdc, Ic = 8Adc, PD = 125W. USHA India LTD
158 BU508AF 60.000W Power NPN Plastic Leaded Transistor. 700V Vceo, 8.000A Ic, 2 hFE. Continental Device India Limited
159 BU508AT 60.000W Medium Power NPN Plastic Leaded Transistor. 700V Vceo, 8.000A Ic, hFE. Continental Device India Limited
160 BU508D NPN, horizontal deflection transistor. Designed for use in large screen color deflection circuits. Vceo = 700Vdc, Vces = 1500Vdc, Veb = 5Vdc, Ic = 8Adc, PD = 125W. USHA India LTD
161 BU508DF 60.000W Power NPN Plastic Leaded Transistor. 700V Vceo, 8.000A Ic, 2 hFE. Continental Device India Limited
162 BUF508A 60.000W Power NPN Plastic Leaded Transistor. 700V Vceo, 8.000A Ic, hFE. Continental Device India Limited
163 BUH417 V(cbo): 1700V; V(ceo): 700V; V(ebo): 10V; 7A; 55W; CRT horizontal deflection high voltage NPN fast switching transistor SGS Thomson Microelectronics
164 BUH417 V(cbo): 1700V; V(ceo): 700V; V(ebo): 10V; 7A; 55W; CRT horizontal deflection high voltage NPN fast switching transistor SGS Thomson Microelectronics
165 BUV48C Trans GP BJT NPN 700V 15A 3-Pin(3+Tab) TO-218 New Jersey Semiconductor
166 BUX98C Trans GP BJT NPN 700V 30A 3-Pin(2+Tab) TO-3 Tube New Jersey Semiconductor
167 C106S 4A sensitive-gate silicon controlled rectifier. Vrrm 700V. General Electric Solid State
168 C137S Thyristor SCR 700V 360A 3-Pin TO-48 New Jersey Semiconductor
169 C1883LS 2700V; 1330A; phase control SCR National Semiconductor
170 C1884LS 2700V; 1490A; phase control SCR National Semiconductor
171 C1885LS 2700V; 1650A; phase control SCR National Semiconductor
172 C2M1000170D 2nd-Generation Z-FET® 1700V, 1 Ω, Silicon-Carbide MOSFET Wolfspeed
173 C2M1000170J 2nd Generation Z-FET™  1700V, 1000 mΩ, Silicon-Carbide MOSFET Wolfspeed
174 C3D10170H 1700V, Z-Rec® Schottky, TO-247-2 package Wolfspeed
175 C3D25170H 1700V, Z-Rec® Schottky, TO-247-2 package Wolfspeed
176 C5D05170H 1700V, Z-Rec® Schottky, TO-247-2 Package Wolfspeed
177 C5D10170H 1700V, Z-Rec® Schottky, TO-247-2 Package Wolfspeed
178 C5D25170H 1700V, Z-Rec® Schottky, TO-247-2 Package Wolfspeed
179 CGS700V Commercial Low Skew PLL 1 to 9 CMOS Clock Driver National Semiconductor
180 CM100DU-34KA IGBT Modules:1700V Mitsubishi Electric Corporation


Datasheets found :: 1142
Page: | 2 | 3 | 4 | 5 | 6 | 7 | 8 | 9 | 10 |



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