| No. |
Part Name |
Description |
Manufacturer |
| 151 |
2N3819 |
N-Channel RF Amplifier |
Fairchild Semiconductor |
| 152 |
2N3819 |
Field effect transistor N-channel |
mble |
| 153 |
2N3819 |
N-Channel Junction (Field-Effect Transistor) |
Motorola |
| 154 |
2N3819 |
N-Channel FETs - RF, VHF, UHF, Amplifiers |
National Semiconductor |
| 155 |
2N3819 |
JFET VHF/UHF Amplifier |
ON Semiconductor |
| 156 |
2N3819 |
N-channel J-FET |
Philips |
| 157 |
2N3819 |
N channel field effect transistor (epoxy can) |
SESCOSEM |
| 158 |
2N3819 |
High Frequency, N-Channel JFET |
Vishay |
| 159 |
2N3819-D |
JFET VHF/UHF Amplifier N-Channel - Depletion |
ON Semiconductor |
| 160 |
2N3819_D27Z |
N-Channel RF Amplifier |
Fairchild Semiconductor |
| 161 |
2N3819_D74Z |
N-Channel RF Amplifier |
Fairchild Semiconductor |
| 162 |
2N5819 |
Leaded Small Signal Transistor General Purpose |
Central Semiconductor |
| 163 |
2N5819 |
SILICON AF MEDIUM POWER TRANSISTOR |
Micro Electronics |
| 164 |
2N5819 |
Trans GP BJT PNP 40V 0.75A 3-Pin TO-92 Box |
New Jersey Semiconductor |
| 165 |
2N819 |
Germanium NPN Transistor |
Motorola |
| 166 |
2SA1819 |
TRANSISTORS TO 92L TO-92LS MRT |
ROHM |
| 167 |
2SB0819 |
Small-signal device - Small-signal transistor - General-use Low-Frequency Amplifires |
Panasonic |
| 168 |
2SB819 |
Small-signal device - Small-signal transistor - General-use Low-Frequency Amplifires |
Panasonic |
| 169 |
2SC1819 |
Si NPN Triple Diffused Planar |
Unknow |
| 170 |
2SC1819M |
Silicon NPN Power Transistors TO-220 package |
Savantic |
| 171 |
2SC5819 |
Transistor Silicon NPN Epitaxial Type High-Speed Switching Applications DC-DC Converter Applications |
TOSHIBA |
| 172 |
2SD1819 |
Transistor - Silicon NPN Epitaxial Planar Type - For general amplification - Complementary pair with 2SB1218 and 2SB1218A |
Panasonic |
| 173 |
2SD1819A |
Small-signal device - Small-signal transistor - General-use Low-Frequency Amplifires |
Panasonic |
| 174 |
2SD1819G |
Silicon NPN epitaxial planar type |
Panasonic |
| 175 |
2SD819 |
SILICON NPN TRIPLE DIFFUSED MESA TYPE |
TOSHIBA |
| 176 |
2SD819 |
SILICON NPN TRIPLE DIFFUSED MESA TYPE |
TOSHIBA |
| 177 |
2SK1819-01MR |
N-CHANNEL ENHANCEMENT TYPE MOSFET |
Fuji Electric |
| 178 |
2SK819 |
FAST SWITCHING N-CHANNEL SILICON POWER MOS FET |
NEC |
| 179 |
40819 |
MOS Field-Effect Transistor N-Channel Depletion Type, up to 250MHz |
RCA Solid State |
| 180 |
5819SM |
Schottky Rectifier |
Microsemi |
| | | |
