| No. |
Part Name |
Description |
Manufacturer |
| 151 |
NX8567SAS318-CC |
EA modulator and wavelength monitor integrated InGaAsP MQW DFB laser diode module for 2.5 Gb/s ultralong-reach 240 km DWDM applications. ITU-T wavelength 1531.898 nm. Frequency 195.70 THz. SC-UPC connector. |
NEC |
| 152 |
NX8570SC318-BA |
CW InGaAsP MQW-DFB laser diode module with wavelength monitor for DWDM applications (20 mW min). ITU-T wavelength 1531.898 nm. Frequency 195.70 THz. FC-PC connector. |
NEC |
| 153 |
NX8570SC318-CA |
CW InGaAsP MQW-DFB laser diode module with wavelength monitor for DWDM applications (20 mW min). ITU-T wavelength 1531.898 nm. Frequency 195.70 THz. SC-PC connector. |
NEC |
| 154 |
NX8571SC318-BA |
CW InGaAsP MQW-DFB laser diode module with wavelength monitor for DWDM applications (10 mW min). ITU-T wavelength 1531.898 nm. Frequency 195.70 THz. FC-PC connector. |
NEC |
| 155 |
NX8571SC318-CA |
CW InGaAsP MQW-DFB laser diode module with wavelength monitor for DWDM applications (10 mW min). ITU-T wavelength 1531.898 nm. Frequency 195.70 THz. SC-PC connector. |
NEC |
| 156 |
P4KE180C |
Transient voltage suppressor. Peak pulse power 400 W. Breakdown voltage Vbr(min) = 162 V, Vbr(max) = 198 V. Test current It = 1.0 mA. |
Shanghai Sunrise Electronics |
| 157 |
P4KE220C |
Transient voltage suppressor. Peak pulse power 400 W. Breakdown voltage Vbr(min) = 198 V, Vbr(max) = 242 V. Test current It = 1.0 mA. |
Shanghai Sunrise Electronics |
| 158 |
P6KE180 |
Transient voltage suppressor. Peak pulse power 600 W. Breakdown voltage Vbr(min) = 162 V, Vbr(max) = 198 V. Test current It = 1.0 mA. |
Shanghai Sunrise Electronics |
| 159 |
P6KE180C |
Transient voltage suppressor. Peak pulse power 600 W. Breakdown voltage Vbr(min) = 162 V, Vbr(max) = 198 V. Test current It = 1.0 mA. |
Shanghai Sunrise Electronics |
| 160 |
P6KE220C |
Transient voltage suppressor. Peak pulse power 600 W. Breakdown voltage Vbr(min) = 198 V, Vbr(max) = 242 V. Test current It = 1.0 mA. |
Shanghai Sunrise Electronics |
| 161 |
PC1601-L |
1 lines; 16 characters; dot size:0.92 x 1.10; dot pitch:0.98 x 1.16; LCD monitor |
Powertip Technology |
| 162 |
PC87351 |
PC98 and ACPI Compliant SuperI/O with System Wake-Up Control |
National Semiconductor |
| 163 |
PC87351-IBW/VLA |
PC98 and ACPI Compliant SuperI/O with System Wake-up Control |
National Semiconductor |
| 164 |
PC87351-ICK_VLA |
PC98 and ACPI Compliant SuperI/O with System Wake-up Control |
National Semiconductor |
| 165 |
PC87351-XXX/VLA |
PC87351 PC98 and ACPI Compliant SuperI/O with System Wake-Up Control |
National Semiconductor |
| 166 |
PCK2010 |
CK98 100/133MHz Spread Spectrum System Clock Generator |
Philips |
| 167 |
PCK2010DL |
CK98 100/133MHz Spread Spectrum System Clock Generator |
Philips |
| 168 |
PCK2014A |
CK98 100/133 MHz spread spectrum system clock generator |
Philips |
| 169 |
PCK2014ADL |
CK98 100/133 MHz spread spectrum system clock generator |
Philips |
| 170 |
RFLA9002 |
698 - 960 MHz Dual Low Noise Amplifier Module |
Qorvo |
| 171 |
SKY65375-11 |
1.92 to 1.98 GHz High Linearity, Active Bias Low-Noise Variable Gain Amplifier |
Skyworks Solutions |
| 172 |
STB18N65M5 |
N-channel 650 V, 0.198 Ohm typ., 15 A MDmesh(TM) V Power MOSFET in D2PAK package |
ST Microelectronics |
| 173 |
STD18N65M5 |
N-channel 650 V, 0.198 Ohm typ., 15 A MDmesh(TM) V Power MOSFET in DPAK package |
ST Microelectronics |
| 174 |
STD6NK50Z |
N-CHANNEL 500V - 0.98 OHM - 5.6A TO-220 / TO-220FP / DPAK ZENER-PROTECTED SUPERMESH™ MOSFET |
ST Microelectronics |
| 175 |
STD6NK50ZT4 |
N-CHANNEL 500V - 0.98 OHM - 5.6A TO-220 / TO-220FP / DPAK ZENER-PROTECTED SUPERMESH™ MOSFET |
ST Microelectronics |
| 176 |
STE40NC60 |
N-CHANNEL 600V 0.098 OHM 40A ISOTOP POWERMESH II POWER MOSFET |
SGS Thomson Microelectronics |
| 177 |
STE40NC60 |
N-CHANNEL 600V 0.098 OHM 40A ISOTOP POWERMESH II POWER MOSFET |
ST Microelectronics |
| 178 |
STF18N65M5 |
N-channel 650 V, 0.198 Ohm typ., 15 A MDmesh(TM) V Power MOSFET in TO-220FP package |
ST Microelectronics |
| 179 |
STF6NK50Z |
N-CHANNEL 500V - 0.98 OHM - 5.6A TO-220 / TO-220FP / DPAK ZENER-PROTECTED SUPERMESH™ MOSFET |
ST Microelectronics |
| 180 |
STI18N65M5 |
N-channel 650 V, 0.198 Ohm typ., 15 A MDmesh(TM) V Power MOSFET in I2PAK package |
ST Microelectronics |
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