| No. |
Part Name |
Description |
Manufacturer |
| 151 |
MTD20N06V-D |
TMOS V Power Field Effect Transistor DPAK for Surface Mount N-Channel Enhancement-Mode Silicon Gate |
ON Semiconductor |
| 152 |
MTD20P03 |
TMOS POWER FET LOGIC LEVEL 19 AMPERES 30 VOLTS RDS(on) = 0.099 OHM |
Motorola |
| 153 |
MTD20P03HDL |
TMOS POWER FET LOGIC LEVEL 19 AMPERES 30 VOLTS RDS(on) = 0.099 OHM |
Motorola |
| 154 |
MTD20P06 |
TMOS POWER FET LOGIC LEVEL 15 AMPERES 60 VOLTS RDS(on) = 175 MOHM |
Motorola |
| 155 |
MTD20P06HDL |
TMOS POWER FET LOGIC LEVEL 15 AMPERES 60 VOLTS RDS(on) = 175 MOHM |
Motorola |
| 156 |
MTD2955E |
TMOS POWER FET 12 AMPERES 60 VOLTS RDS(on) = 0.3 OHM |
Motorola |
| 157 |
MTD2955E |
TMOS E-FET Power Field Effect Transistor DPAK for Surface Mount |
ON Semiconductor |
| 158 |
MTD2955E-1 |
TMOS power FET. 60 V, 12 A, Rds(on) 0.3 Ohm. |
Motorola |
| 159 |
MTD2955E-D |
TMOS E-FET Power Field Effect Transistor DPAK for Surface Mount P-Channel Enhancement-Mode Silicon Gate |
ON Semiconductor |
| 160 |
MTD2955ET4 |
TMOS E-FET Power Field Effect Transistor DPAK for Surface Mount |
ON Semiconductor |
| 161 |
MTD2955V |
TMOS POWER FET 12 AMPERES 60 VOLTS RDS(on) = 0.230 OHM |
Motorola |
| 162 |
MTD2N40E |
TMOS POWER FET 2.0 AMPERES 400 VOLTS RDS(on) = 3.5 OHM |
Motorola |
| 163 |
MTD2N50E |
TMOS POWER FET 2.0 AMPERES 500 VOLTS RDS(on) = 3.6 OHM |
Motorola |
| 164 |
MTD3055E |
TMOS power FET. 60 V, 8 A, Rds(on) 0.15 Ohm. |
Motorola |
| 165 |
MTD3055E1 |
TMOS power FET. 60 V, 8 A, Rds(on) 0.15 Ohm. |
Motorola |
| 166 |
MTD3055EL |
TMOS IV Power Field Effect Transistor(N-Channel Enhancement-Mode Silicon Gate) |
Motorola |
| 167 |
MTD3055EL1 |
TMOS power MOSFET logic level. 60 V, 10 A, Rds(on) 0.18 Ohm. |
Motorola |
| 168 |
MTD3055V |
TMOS POWER FET 12 AMPERES 60 VOLTS RDS(on) = 0.15 OHM |
Motorola |
| 169 |
MTD3055VL |
TMOS POWER FET 12 AMPERES 60 VOLTS RDS(on) = 0.18 OHM |
Motorola |
| 170 |
MTD3N25E |
TMOS POWER FET 3 AMPERES 250 VOLTS RDS(on) = 1.4 OHM |
Motorola |
| 171 |
MTD3N25E-D |
TMOS E-FET Power Field Effect Transistor DPAK for Surface Mount N-Channel Enhancement-Mode Silicon Gate |
ON Semiconductor |
| 172 |
MTD4N20E |
TMOS POWER FET 4.0 AMPERES 200 VOLTS RDS(on) = 1.2 OHM |
Motorola |
| 173 |
MTD5N25E |
TMOS POWER FET 5.0 AMPERES 250 VOLTS RDS(on) = 1.0 OHM |
Motorola |
| 174 |
MTD5N25E-D |
TMOS E-FET Power Field Effect Transistor DPAK for Surface Mount N-Channel Enhancement-Mode Silicon Gate |
ON Semiconductor |
| 175 |
MTD5P06E |
TMOS POWER FET 5.0 AMPERES 60 VOLTS RDS(on) = 0.55 OHM |
Motorola |
| 176 |
MTD5P06V |
TMOS POWER FET 5 AMPERES 60 VOLTS RDS(on) = 0.450 OHM |
Motorola |
| 177 |
MTD6N10E |
TMOS POWER FET 6.0 AMPERES 100 VOLTS RDS(on) = 0.400 OHM |
Motorola |
| 178 |
MTD6N10E-D |
TMOS E-FET Power Field Effect Transistor DPAK for Surface Mount N-Channel Enhancement-Mode Silicon Gate |
ON Semiconductor |
| 179 |
MTD6N15 |
TMOS POWER FET 6.0 AMPERES 150 VOLTS RDS(on) = 0.3 OHM |
Motorola |
| 180 |
MTD6N15 |
TMOS Power 150V .3R |
ON Semiconductor |
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