| No. |
Part Name |
Description |
Manufacturer |
| 151 |
2SA1584 |
TRANSISTORS TO 92L TO-92LS MRT |
ROHM |
| 152 |
2SA1585S |
Transistors > Small Signal Bipolar Transistors(up to 0.6W) |
ROHM |
| 153 |
2SA1585S-Q |
TO-92S Plastic-Encapsulate Biploar Transistors |
Micro Commercial Components |
| 154 |
2SA1585S-R |
TO-92S Plastic-Encapsulate Biploar Transistors |
Micro Commercial Components |
| 155 |
2SA1586 |
Transistor Silicon PNP Epitaxial Type (PCT process) Audio Frequency General Purpose Amplifier Applications |
TOSHIBA |
| 156 |
2SA1587 |
Transistor Silicon PNP Epitaxial Type (PCT process) Audio Frequency General Purpose Amplifier Applications |
TOSHIBA |
| 157 |
2SA1588 |
Transistor Silicon PNP Epitaxial (PCT process) Audio Frequency Low Power Amplifier Applications Driver Stage Amplifier Applications Switching Applications |
TOSHIBA |
| 158 |
2SA1592 |
PNP Epitaxial Planar Silicon Transistors High-Voltage Switching Applications |
SANYO |
| 159 |
2SA1593 |
PNP Epitaxial Planar Silicon Transistors High-Voltage Switching Applications |
SANYO |
| 160 |
2SA1598 |
Silicon PNP Power Transistors ITO-220 package |
Savantic |
| 161 |
2SA1598 |
Low-Saturation Voltage Switching Transistors / LSV Series (Three Terminal Type) |
Shindengen |
| 162 |
2SA1599 |
Silicon PNP Power Transistors ITO-220 package |
Savantic |
| 163 |
2SA1599 |
Low-Saturation Voltage Switching Transistors / LSV Series (Three Terminal Type) |
Shindengen |
| 164 |
2SA15H |
Germanium PNP Alloyed Junction Transistor, intended for use in MW RF Amplifier |
Hitachi Semiconductor |
| 165 |
30KPA150 |
Diode TVS Single Uni-Dir 150V 30KW 2-Pin Case P600 T/R |
New Jersey Semiconductor |
| 166 |
30KPA150A |
Diode TVS Single Uni-Dir 150V 30KW 2-Pin Case P600 T/R |
New Jersey Semiconductor |
| 167 |
30KPA150Ae3/TR13 |
Standard Unidirectional and Bidirectional TVS |
Microsemi |
| 168 |
30KPA150C |
Diode TVS Single Bi-Dir 150V 30KW 2-Pin Case P600 T/R |
New Jersey Semiconductor |
| 169 |
30KPA150CA |
Diode TVS Single Bi-Dir 150V 30KW 2-Pin Case P600 T/R |
New Jersey Semiconductor |
| 170 |
30KPA150CAe3/TR13 |
Standard Unidirectional and Bidirectional TVS |
Microsemi |
| 171 |
30KPA150Ce3/TR13 |
Standard Unidirectional and Bidirectional TVS |
Microsemi |
| 172 |
30KPA150e3/TR13 |
Standard Unidirectional and Bidirectional TVS |
Microsemi |
| 173 |
30KPA156 |
Diode TVS Single Uni-Dir 156V 30KW 2-Pin Case P600 T/R |
New Jersey Semiconductor |
| 174 |
30KPA156A |
Diode TVS Single Uni-Dir 156V 30KW 2-Pin Case P600 T/R |
New Jersey Semiconductor |
| 175 |
30KPA156Ae3/TR13 |
Standard Unidirectional and Bidirectional TVS |
Microsemi |
| 176 |
30KPA156C |
Diode TVS Single Bi-Dir 156V 30KW 2-Pin Case P600 T/R |
New Jersey Semiconductor |
| 177 |
30KPA156CA |
Diode TVS Single Bi-Dir 156V 30KW 2-Pin Case P600 T/R |
New Jersey Semiconductor |
| 178 |
30KPA156CAe3/TR13 |
Standard Unidirectional and Bidirectional TVS |
Microsemi |
| 179 |
30KPA156Ce3/TR13 |
Standard Unidirectional and Bidirectional TVS |
Microsemi |
| 180 |
30KPA156e3/TR13 |
Standard Unidirectional and Bidirectional TVS |
Microsemi |
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