No. |
Part Name |
Description |
Manufacturer |
151 |
2N5401 |
PNP high-voltage transistor |
Philips |
152 |
2N5401C |
High Voltage Transistor |
Korea Electronics (KEC) |
153 |
2N5401S |
High Voltage Transistor |
Korea Electronics (KEC) |
154 |
2N5415 |
Silicon PNP High Voltage Transistor |
IPRS Baneasa |
155 |
2N5415 |
PNP high-voltage transistors |
Philips |
156 |
2N5416 |
Silicon PNP High Voltage Transistor |
IPRS Baneasa |
157 |
2N5416 |
PNP high-voltage transistors |
Philips |
158 |
2N5470 |
The Use of Coaxial-Package Transistors in Microstripline Circuits - Application Note |
RCA Solid State |
159 |
2N5550 |
High Voltage Transistor |
Korea Electronics (KEC) |
160 |
2N5550 |
SILICON GENERAL PURPOSE HIGH VOLTAGE TRANSISTORS |
Micro Electronics |
161 |
2N5550 |
NPN high-voltage transistors |
Philips |
162 |
2N5550S |
High Voltage Transistor |
Korea Electronics (KEC) |
163 |
2N5551 |
NPN EPITAXIAL PLANAR SILICON HIGH VOLTAGE TRANSISTOR |
Boca Semiconductor Corporation |
164 |
2N5551 |
High Voltage Transistor |
Korea Electronics (KEC) |
165 |
2N5551 |
SILICON GENERAL PURPOSE HIGH VOLTAGE TRANSISTORS |
Micro Electronics |
166 |
2N5551 |
NPN high-voltage transistors |
Philips |
167 |
2N5551C |
High Voltage Transistor |
Korea Electronics (KEC) |
168 |
2N5551S |
High Voltage Transistor |
Korea Electronics (KEC) |
169 |
2N5551SC |
High Voltage Transistor |
Korea Electronics (KEC) |
170 |
2N6257 |
TO-3 Power Package Transistors (NPN) |
Unknow |
171 |
2N6371HV |
TO-3 Power Package Transistors (NPN) |
Unknow |
172 |
2N6515 |
NPN Epitaxial Silicon Transistor - High Voltage Transistor |
Fairchild Semiconductor |
173 |
2N6515 |
High Voltage Transistor 625mW |
Micro Commercial Components |
174 |
2N6515 |
High Voltage Transistors |
ON Semiconductor |
175 |
2N6515 |
NPN Epitaxial Silicon High Voltage Transistor |
Samsung Electronic |
176 |
2N6515 |
High voltage transistor. Collector-emitter voltage: Vceo = 250V. Collector-base voltage: Vcbo = 250V. Collector dissipation: Pc(max) = 625mW. |
USHA India LTD |
177 |
2N6515-D |
High Voltage Transistors |
ON Semiconductor |
178 |
2N6515RLRM |
High Voltage Transistors |
ON Semiconductor |
179 |
2N6516 |
NPN Epitaxial Silicon Transistor - High Voltage Transistor |
Fairchild Semiconductor |
180 |
2N6516 |
High voltage transistor. Collector-emitter voltage: Vceo = 250V. Collector-base voltage: Vcbo = 250V. Collector dissipation: Pc(max) = 625mW. |
USHA India LTD |
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