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Datasheets for AGE T

Datasheets found :: 5870
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No. Part Name Description Manufacturer
151 2N5401 PNP high-voltage transistor Philips
152 2N5401C High Voltage Transistor Korea Electronics (KEC)
153 2N5401S High Voltage Transistor Korea Electronics (KEC)
154 2N5415 Silicon PNP High Voltage Transistor IPRS Baneasa
155 2N5415 PNP high-voltage transistors Philips
156 2N5416 Silicon PNP High Voltage Transistor IPRS Baneasa
157 2N5416 PNP high-voltage transistors Philips
158 2N5470 The Use of Coaxial-Package Transistors in Microstripline Circuits - Application Note RCA Solid State
159 2N5550 High Voltage Transistor Korea Electronics (KEC)
160 2N5550 SILICON GENERAL PURPOSE HIGH VOLTAGE TRANSISTORS Micro Electronics
161 2N5550 NPN high-voltage transistors Philips
162 2N5550S High Voltage Transistor Korea Electronics (KEC)
163 2N5551 NPN EPITAXIAL PLANAR SILICON HIGH VOLTAGE TRANSISTOR Boca Semiconductor Corporation
164 2N5551 High Voltage Transistor Korea Electronics (KEC)
165 2N5551 SILICON GENERAL PURPOSE HIGH VOLTAGE TRANSISTORS Micro Electronics
166 2N5551 NPN high-voltage transistors Philips
167 2N5551C High Voltage Transistor Korea Electronics (KEC)
168 2N5551S High Voltage Transistor Korea Electronics (KEC)
169 2N5551SC High Voltage Transistor Korea Electronics (KEC)
170 2N6257 TO-3 Power Package Transistors (NPN) Unknow
171 2N6371HV TO-3 Power Package Transistors (NPN) Unknow
172 2N6515 NPN Epitaxial Silicon Transistor - High Voltage Transistor Fairchild Semiconductor
173 2N6515 High Voltage Transistor 625mW Micro Commercial Components
174 2N6515 High Voltage Transistors ON Semiconductor
175 2N6515 NPN Epitaxial Silicon High Voltage Transistor Samsung Electronic
176 2N6515 High voltage transistor. Collector-emitter voltage: Vceo = 250V. Collector-base voltage: Vcbo = 250V. Collector dissipation: Pc(max) = 625mW. USHA India LTD
177 2N6515-D High Voltage Transistors ON Semiconductor
178 2N6515RLRM High Voltage Transistors ON Semiconductor
179 2N6516 NPN Epitaxial Silicon Transistor - High Voltage Transistor Fairchild Semiconductor
180 2N6516 High voltage transistor. Collector-emitter voltage: Vceo = 250V. Collector-base voltage: Vcbo = 250V. Collector dissipation: Pc(max) = 625mW. USHA India LTD


Datasheets found :: 5870
Page: | 2 | 3 | 4 | 5 | 6 | 7 | 8 | 9 | 10 |



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