| No. |
Part Name |
Description |
Manufacturer |
| 151 |
BFS483 |
NPN Silicon RF Transistor (For low-noise, high-gain broadband amplifier at colector current from 2mA to 28mA) |
Siemens |
| 152 |
BFY193 |
HiRel NPN Silicon RF Transistor (HiRel Discrete and Microwave Semiconductor For low noise, high gain broadband amplifiers up to 2 GHz.) |
Siemens |
| 153 |
BGA310 |
Silicon Bipolar MMIC-Amplifier (Cascadable 50 W-gain block 9 dB typical gain at 1.0 GHz 9 dBm typical P-1dB at 1.0 GHz 3 dB-bandwidth: DC to 2.4 GHz) |
Siemens |
| 154 |
BGA312 |
Silicon Bipolar MMIC-Amplifier (Cascadable 50 W-gain block 11 dB typical gain at 1.0 GHz 9 dBm typical P-1dB at 1.0 GHz) |
Siemens |
| 155 |
BGA318 |
Silicon Bipolar MMIC-Amplifier (Cascadable 50 W-gain block 16 dB typical gain at 1.0 GHz 12 dBm typical P-1dB at 1.0 GHz) |
Siemens |
| 156 |
BGA420 |
Si-MMIC-Amplifierin SIEGET 25-Technologie (Cascadable 50 ��-gain block Unconditionally stable) |
Siemens |
| 157 |
BGA427 |
Si-MMIC-Amplifier in SIEGET 25-Technologie (Cascadable 50 W-gain block Unconditionally stable) |
Siemens |
| 158 |
BUD42D |
High Speed, High Gain Bipolar NPN Transistor |
ON Semiconductor |
| 159 |
BUD42D-001 |
High Speed, High Gain Bipolar NPN Transistor |
ON Semiconductor |
| 160 |
BUD42D-D |
High Speed, High Gain Bipolar NPN Transistor Integrating an Antisaturation Network and a Transient Voltage Suppression Capability |
ON Semiconductor |
| 161 |
BUD42DT4 |
High Speed/ High Gain Bipolar NPN Transistor with Antisaturation Network and Transient Voltage Suppression Capability |
ON Semiconductor |
| 162 |
BUD43D2-D |
Bipolar NPN Transistor High Speed, High Gain Bipolar NPN Transistor Integrating an Antisaturation Network and a Transient Voltage Suppression Capability |
ON Semiconductor |
| 163 |
BUD44D2-D |
High Speed, High Gain Bipolar NPN Power Transistor with Integrated Collector-Emitter Diode and Built-in Efficient Antisaturation Network POWER TRANSISTORS 2 AMPERES 700 VOLTS 25 WATTS |
ON Semiconductor |
| 164 |
BUL42D |
High Speed, High Gain Bipolar NPN Transistor |
ON Semiconductor |
| 165 |
BUL42D-D |
High Speed, High Gain Bipolar NPN Transistor Integrating an Antisaturation Network and a Transient Voltage Suppression Capability |
ON Semiconductor |
| 166 |
BUL44D2-D |
High Speed, High Gain Bipolar NPN Power Transistor with Integrated Collector-Emitter Diode and Built-in Efficient Antisaturation Network |
ON Semiconductor |
| 167 |
BUL45D2-D |
High Speed, High Gain Bipolar NPN Power Transistor with Integrated Collector-Emitter Diode and Built-in Efficient Antisaturation Network |
ON Semiconductor |
| 168 |
CGY50 |
GaAs MMIC (Single-stage monolithic microwave IC MMICamplifier Cascadable 50 �� gain block) |
Siemens |
| 169 |
CHA2098B |
20-40GHz High Gain Buffer Amplifier |
United Monolithic Semiconductors |
| 170 |
CHA2098B99F/00 |
20-40GHz High Gain Buffer Amplifier |
United Monolithic Semiconductors |
| 171 |
CHA2098RBF |
20-33GHz High Gain Buffer Amplifier |
United Monolithic Semiconductors |
| 172 |
CHA2098RBF/24 |
20-33GHz High Gain Buffer Amplifier |
United Monolithic Semiconductors |
| 173 |
CLC407 |
Low Cost, Low Power, 110 MHz Programmable Gain Buffer with Disable |
National Semiconductor |
| 174 |
CLC407AJ |
Low-Cost/ Low-Power Programmable Gain Buffer with Disable |
National Semiconductor |
| 175 |
CLC407AMC |
Low Cost, Low Power, 110 MHz Programmable Gain Buffer with Disable |
National Semiconductor |
| 176 |
CLC407MDC |
Low Cost, Low Power, 110 MHz Programmable Gain Buffer with Disable |
National Semiconductor |
| 177 |
CLC417 |
Dual, Low Cost, Low Power, Programmable Gain Buffer |
National Semiconductor |
| 178 |
CLC417AJE |
Dual Low-Power, Programmable Gain Buffer |
National Semiconductor |
| 179 |
CLC417AJP |
Dual Low-Power, Programmable Gain Buffer |
National Semiconductor |
| 180 |
CLC5612 |
Dual, High Output, Programmable Gain Buffer |
National Semiconductor |
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